US5831277A
Expired / Lapsed
US
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III-nitride superlattice structures
Assignee: MP Technologies LLC
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Filing: 1997-03-19
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Granted: 1998-11-03
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Expires: 2017-03-19
Abstract
Abstract The subject invention involves the p-type doping of AlxGa1-xN thin films with a III-nitride composition and specifically a {AlxGa1-xN/GaN} short-period superlattice structure of less than 5000 ANGSTROM thickness in total in which both the barriers and the wells are p-type doped with Mg.
Inventors
- 👤 Manijeh Razeghi
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-06 00:33
CPC Classifications
H; H10; H10H; H10H20/00; H10H20/80; H10H20/81; H10H20/822; H10H20/824; H10H20/825; B; B82; B82Y; B82Y20/00; H10D; H10D62/00; H10D62/80; H10D62/81; H10D62/815; H10D62/8161; H10D62/8162; H10D62/8164; H10F; H10F30/00; H10F30/20; H10F30/21; H10F30/22; H10F30/221; H10F30/2215; H10F77/00; H10F77/10; H10F77/14; H10F77/146; H10H20/811; H10H20/812; H10P; H10P14/00; H10P14/20; H10P14/24; H10P14/29; H10P14/2901; H10P14/2902; H10P14/2904; H10P14/2921; H10P14/32; H10P14/3202; H10P14/3214; H10P14/3216; H10P14/3242; H10P14/3244; H10P14/3251; H10P14/3252; H10P14/34; H10P14/3402; H10P14/3414; H10P14/3416; H10P14/3438; H10P14/3441; H10P14/3442; H10P14/3444; H01; H01S; H01S5/00; H01S5/30; H01S5/32; H01S5/323; H01S5/32308; H01S5/32341
Claims Analysis
Total Claims: 22
Claim 1
Independent Claim
87 words
A photoemitter device, comprising a substrate, an upper and lower contact layer, an upper and lower confinement layer, an undoped active layer between said upper and lower confinement layer and a cap layer; said upper confinement layer comprising a superlattice structure having from about 5 to about 500 alternating layers of Al x Ga 1-x N and GaN (0≦X≦1) with a total thickness of less than 5000 Å, and said lower confinement layer consisting essentially of one GaN layer and one Ga x Al 1-x N layer.
Claim 2
Dependent Claim
87 words
A photoemitter device, comprising a substrate, an upper and lower contact layer, an upper and lower confinement layer, an undoped active layer between said upper and lower confinement layer and a cap layer; said upper confinement layer comprising a superlattice structure having from about 5 to about 500 alternating layers of Al x Ga 1-x N and GaN (0≦X≦1) with a total thickness of less than 5000 Å, and said lower confinement layer consisting essentially of one GaN layer and one Ga x Al 1-x N layer.
Claim 3
Dependent Claim
15 words
The device of claim 1 wherein said substrate is Al 2 O 3 or SiC.
Claim 4
Dependent Claim
12 words
The device of claim 1 wherein said lower contact layer is GaN:Si.
Claim 5
Dependent Claim
25 words
The device of claim 1 wherein said lower contact layer is doped with a dopant selected from the group consisting of Si, Ge and Sn.
Claim 6
Dependent Claim
13 words
The device of claim 1 wherein said active layer is GaN or InGaN.
Claim 7
Dependent Claim
35 words
The device of claim 1 wherein the layers of GaN of said upper confinement layer each have a thickness of between about 10 to about 30 Å and p-type doping of≧2×10 17 cm -3 .
Claim 8
Dependent Claim
37 words
The device of claim 1 wherein the layers of Al x Ga 1-x N of said upper confinement layers have a thickness of about 10 to about 100 Å and p-type doping of≧2×10 17 cm -3 .
Claim 9
Dependent Claim
29 words
The device of claim 1 wherein the layers of Al x Ga 1-x N of said upper confinement layers have a thickness of about 10 to about 100 Å.
Claim 10
Dependent Claim
16 words
The device of claim 1 wherein said upper confinement layers are doped with a p-type dopant.
Claim 11
Dependent Claim
18 words
The device of claim 1 wherein said upper confinement layers are doped with Mg, Be, Zn or Cd.
Claim 12
Dependent Claim
83 words
A photoemitter device, comprising a substrate, an upper and lower contact layer, an upper and lower confinement layer, an undoped active layer between said upper and lower confinement layer and a cap layer; said upper confinement layer comprising a superlattice structure having from about 5 to about 500 alternating layers of Al x Ga 1-x N and GaN (0≦X≦1) with a total thickness of less than 5000 Å, and said layers of GaN in said superlattice structure each being of substantially equal thickness.
Claim 13
Dependent Claim
83 words
A photoemitter device, comprising a substrate, an upper and lower contact layer, an upper and lower confinement layer, an undoped active layer between said upper and lower confinement layer and a cap layer; said upper confinement layer comprising a superlattice structure having from about 5 to about 500 alternating layers of Al x Ga 1-x N and GaN (0≦X≦1) with a total thickness of less than 5000 Å, and said layers of GaN in said superlattice structure each being of substantially equal thickness.
Claim 14
Dependent Claim
15 words
The device of claim 11 wherein said substrate is Al 2 O 3 or SiC.
Claim 15
Dependent Claim
12 words
The device of claim 11 wherein said lower contact layer is GaN:Si.
Claim 16
Dependent Claim
25 words
The device of claim 11 wherein said lower contact layer is doped with a dopant selected from the group consisting of Si, Ge and Sn.
Claim 17
Dependent Claim
13 words
The device of claim 11 wherein said active layer is GaN or InGaN.
Claim 18
Dependent Claim
34 words
The device of claim 11 wherein the layers of GaN of said upper confinement layers have a thickness of between about 10 to about 30 Å and p-type doping of≧2×10 17 cm -3 .
Claim 19
Dependent Claim
37 words
The device of claim 11 wherein the layers of Al x Ga 1-x N of said upper confinement layer have a thickness of about 10 to about 100 Å and p-type doping of≧2×10 17 cm -3 .
Claim 20
Dependent Claim
29 words
The device of claim 11 wherein the layers of Al x Ga 1-x N of said upper confinement layer have a thickness of about 10 to about 100 Å.
Claim 21
Dependent Claim
16 words
The device of claim 11 wherein said upper confinement layer is doped with a p-type dopant.
Claim 22
Dependent Claim
18 words
The device of claim 11 wherein said upper confinement layer is doped with Mg, Be, Zn or Cd.
References Cited (Backward Citations)
US5670798A
Cited
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