US6407405B1
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p-Type group II-VI compound semiconductor crystals growth method for such crystals, and semiconductor device made of such crystals
Assignee: Stanley Electric Co Ltd
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Filing: 2000-05-18
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Granted: 2002-06-18
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Expires: 2020-05-18
Abstract
Abstract A method of growing p-type group II-VI compound semiconductor crystals, includes a step of forming ZnO layers and ZnTe layers alternately on a ZnO substrate, the ZnO layer being not doped with impurities and having a predetermined impurity concentration, and the ZnTe layer being doped with p-type impurities N to a predetermined impurity concentration or higher.
Inventors
- 👤 Michihiro Sano
- 👤 Takafumi Yao
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-06 14:10
CPC Classifications
H; H10; H10H; H10H20/00; H10H20/80; H10H20/81; H10H20/822; H10H20/823; C; C30; C30B; C30B23/00; C30B23/02; C30B29/00; C30B29/10; C30B29/16; C30B29/46; C30B29/48; H10H20/8232; H10H20/01; H10H20/011; H10H20/012; H10H20/0125; H10H20/811; H10H20/812
Claims Analysis
Total Claims: 18
Claim 1
Independent Claim
33 words
A p-type group II-VI compound semiconductor crystalline material, comprising: a lamination structure of ZnO layers and ZnTe layers alternately stacked on a substrate, wherein N is doped at least in the ZnTe layer.
Claim 2
Dependent Claim
33 words
A p-type group II-VI compound semiconductor crystalline material, comprising: a lamination structure of ZnO layers and ZnTe layers alternately stacked on a substrate, wherein N is doped at least in the ZnTe layer.
Claim 3
Dependent Claim
34 words
A p-type group II-VI compound semiconductor crystalline material according to claim 1 , wherein the ZnO layer is doped with N at a lower concentration than an N concentration doped in the ZnTe layer.
Claim 4
Dependent Claim
31 words
A p-type group II-VI compound semiconductor crystalline material according to claim 1 , further comprising a ZnO layer grown at a low temperature formed between the lamination structure and the substrate.
Claim 5
Dependent Claim
56 words
A group II-VI compound semiconductor device comprising: a substrate; an n-type group II-VI compound semiconductor layer doped with group III elements and formed on the substrate; and a p-type group II-VI compound semiconductor layer formed on the substrate and having ZnO layers and ZnTe layers alternately laminated, N being doped at least in the ZnTe layer.
Claim 6
Dependent Claim
56 words
A group II-VI compound semiconductor device comprising: a substrate; an n-type group II-VI compound semiconductor layer doped with group III elements and formed on the substrate; and a p-type group II-VI compound semiconductor layer formed on the substrate and having ZnO layers and ZnTe layers alternately laminated, N being doped at least in the ZnTe layer.
Claim 7
Dependent Claim
40 words
A group II-VI compound semiconductor device according to claim 4 , further comprising: a first electrode electrically connected to said n-type group II-VI compound semiconductor layer; and a second electrode electrically connected to said p-type group II-VI compound semiconductor layer.
Claim 8
Dependent Claim
38 words
A group II-VI compound semiconductor device according to claim 5 , wherein an opening is formed through one of said first and second electrodes to expose a surface of said n-type or p-type group II-VI compound semiconductor layers.
Claim 9
Dependent Claim
26 words
A group II-VI compound semiconductor device according to claim 4 , further comprising a ZnO layer grown at a low temperature in contact with the substrate.
Claim 10
Dependent Claim
26 words
A group II-VI compound semiconductor device according to claim 5 , further comprising a ZnO layer grown at a low temperature in contact with the substrate.
Claim 11
Dependent Claim
88 words
A group II-VI compound semiconductor device comprising: a substrate; an n-type group II-VI compound semiconductor layer doped with a group III element and disposed above the substrate; and a p-type group II-VI compound semiconductor laminate disposed above the substrate, and including alternately laminated ZnO layers and ZnTe layers, the ZnTe layers being doped with N, and the ZnO layers not being doped with N, a concentration of N in the ZnO layers by diffusion being less than the concentration of N in the ZnTe layers doped with N.
Claim 12
Dependent Claim
88 words
A group II-VI compound semiconductor device comprising: a substrate; an n-type group II-VI compound semiconductor layer doped with a group III element and disposed above the substrate; and a p-type group II-VI compound semiconductor laminate disposed above the substrate, and including alternately laminated ZnO layers and ZnTe layers, the ZnTe layers being doped with N, and the ZnO layers not being doped with N, a concentration of N in the ZnO layers by diffusion being less than the concentration of N in the ZnTe layers doped with N.
Claim 13
Dependent Claim
55 words
A method of growing p-type group II-VI compound semiconductor crystals according to claim 7 comprising: forming ZnO layers and ZnTe layers alternately above a substrate, the ZnO layers not being doped with impurities and having a predetermined impurity concentration, and doping the ZnTe layers with p-type impurities N to a predetermined impurity concentration or higher.
Claim 14
Dependent Claim
31 words
A method of growing p-type group II-VI compound semiconductor crystals according to claim 1 , wherein each ZnTe layer is grown to a thickness of a critical film thickness or thinner.
Claim 15
Dependent Claim
30 words
A method of growing p-type group II-VI compound semiconductor crystals according to claim 1 , wherein each ZnO layer is grown to a thickness of a two-molecule layer or thicker.
Claim 16
Dependent Claim
113 words
A method of growing p-type group II-VI compound semiconductor crystals according to claim 1 , wherein: a process of forming the ZnO layer comprises the steps of: (a) supplying Zn and O elements to the substrate; (b) after said step (a), stopping a supply of O elements; and (c) after said step (b), stopping a supply of Zn elements to remove excessive Zn elements above the substrate; and a process of forming the ZnTe layer comprises the steps of: (d) after said step (c), supplying Te and N elements; and (e) after said step (d), stopping a supply of Te and N elements to the substrate to intercept crystal growth on the substrate.
Claim 17
Dependent Claim
43 words
A method of growing p-type group II-VI compound semiconductor crystals according to claim 4 , further comprising the steps of: (f) after said step (e), supplying Zn elements to the substrate; and (g) after said step (f), supplying O elements to the substrate.
Claim 18
Dependent Claim
99 words
A method of growing p-type group II-VI compound semiconductor crystals according to claim 1 , wherein: a process of forming the ZnO layer comprises, in a state that Zn elements are supplied to the substrate, the steps of: (a) supplying O elements to grow the ZnO layer not doped with impurities and having the predetermined impurity concentration; and (b) after said step (a), stopping a supply of O elements; and a process of forming the ZnTe layer comprises the steps of: (c) after said step (b), supplying Te and N elements to grown the ZnTe layer doped with N.
References Cited (Backward Citations)
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