EP0702101A2
Expired / Lapsed
EP
⏱️ 0.0 years remaining
MBE System and semiconductor device fabricated using same
Assignee: Sony Corp
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Filing: 1995-09-13
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Granted: —
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Expires: 2015-09-13
Abstract
Abstract A molecular beam epitaxy system having a plurality of chambers which contain at least a first chamber and a second chamber. The first chamber is used to form II-V column compound semiconductor layers not containing Te. The second chamber is used to form II-V column compound semiconductor layers containing at least Te. A semiconductor device having an ohmic characteristics can be fabricated without mixing Te into other layers.
Inventors
- 👤 Koshi c/o Sony Corp. Tamamura
- 👤 Hironori c/o Sony Corp. Tsukamoto
- 👤 Masao c/o Sony Corp. Ikeda
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-07 08:16
CPC Classifications
H; H10; H10H; H10H20/00; H10H20/01; H10H20/011; H10H20/012; H10P; H10P14/00; H10P14/20; H10P14/29; H10P14/2901; H10P14/2907; H10P14/2911; H10P14/32; H10P14/3202; H10P14/3214; H10P14/3221; H10P14/3224; H10P14/3228; H10P14/3231; H10P14/34; H10P14/3402; H10P14/3424; H10P14/3432; C; C30; C30B; C30B23/00; C30B23/02; C30B29/00; C30B29/10; C30B29/46; C30B29/48
Claims Analysis
Total Claims: 7
Claim 1
Independent Claim
38 words
A molecular beam epitaxy system comprising: a first chamber for forming layers of semiconductors of II-V column compounds not containing tellurium; and a second chamber for forming layers of semiconductors of II-V column compounds containing at least tellurium.
Claim 2
Dependent Claim
47 words
A molecular beam epitaxy system having a chamber to which a plurality of cells are connected, said cells containing at least one cell for evaporating tellurium, said system comprising: a gate valve mounted in said cell for evaporating tellurium and located on a side of said chamber.
Claim 3
Dependent Claim
66 words
A molecular beam epitaxy system comprising: a first chamber for forming layers of semiconductors of II-V column compounds not containing tellurium; a second chamber for forming layers of semiconductors of II-V column compounds containing at least tellurium; a plurality of cells connected to said second chamber; and a gate valve mounted in said cell for evaporating tellurium and located on a side of said second chamber.
Claim 4
Dependent Claim
38 words
A method of fabricating an optical semiconductor device having laminated II-V column compound semiconductor layers, comprising the step of: forming the II-V column compound semiconductor layers containing at least tellurium, using the system of claim 1 or 2.
Claim 5
Dependent Claim
29 words
A method of fabricating an optical semiconductor device as set forth in claim 4, wherein said II-V column compound semiconductor layers form a multilayer film of ZnSe and ZnTe.
Claim 6
Dependent Claim
41 words
A method of fabricating an optical semiconductor device as set forth in claim 5, wherein said ZnSe and ZnTe form contact layers and said ZnTe forms a cap layer, and wherein said optical semiconductor device forms a laser emitting blue light.
Claim 7
Dependent Claim
61 words
A method of fabricating an optical semiconductor device acting as a laser emitting blue light as set forth in claim 6, wherein II-V column compound semiconductor layers are formed from a buffer layer not containing Te to a cladding layer while closing said gate valve, and wherein said contact layer and said cap layer are formed while opening said gate valve.
References Cited (Backward Citations)
No citation records indexed.
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