US7282782B2
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Combined binary oxide semiconductor device
Assignee: Hewlett Packard Development Co LP
•
Filing: 2004-03-12
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Granted: 2007-10-16
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Expires: 2024-03-12
Abstract
Abstract A semiconductor device can include a channel including a first binary oxide and a second binary oxide.
Inventors
- 👤 Randy L. Hoffman
- 👤 Peter P. Mardilovich
- 👤 Gregory S. Herman
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-05 19:14
CPC Classifications
H; H10; H10D; H10D30/00; H10D30/60; H10D30/67; H10D30/674; H10D30/6755; H10D30/6729; H10D30/673; H10D30/6733; H10D30/6734
Claims Analysis
Total Claims: 42
Claim 1
Independent Claim
59 words
A semiconductor device, comprising: a drain electrode; a source electrode; a channel contacting the drain electrode and the source electrode, wherein the channel includes a first binary oxide selected from SrO and CaO and a second binary oxide selected from CdO, ZnO and MgO; a gate electrode; and a gate dielectric positioned between the gate electrode and the channel.
Claim 2
Dependent Claim
59 words
A semiconductor device, comprising: a drain electrode; a source electrode; a channel contacting the drain electrode and the source electrode, wherein the channel includes a first binary oxide selected from SrO and CaO and a second binary oxide selected from CdO, ZnO and MgO; a gate electrode; and a gate dielectric positioned between the gate electrode and the channel.
Claim 3
Dependent Claim
38 words
The semiconductor device of claim 1 , wherein the channel includes an atomic composition of a first metal (A):second metal (B) ratio (A:B), wherein A and B are each in a range of about 0.05 to about 0.95.
Claim 4
Dependent Claim
25 words
The semiconductor device of claim 1 , wherein the channel includes one of an amorphous form, a single-phase crystalline form, and a mixed-phase crystalline form.
Claim 5
Dependent Claim
30 words
The semiconductor device of claim 1 , wherein at least one of the drain electrode, the source electrode, the channel, and gate electrode, and the gate dielectric are substantially transparent.
Claim 6
Dependent Claim
55 words
The semiconductor device of claim 1 , wherein the channel includes a third binary oxide from ZnO, CdO, SrO, CaO, and MgO and having an atomic composition of a first metal:second metal:third metal ratio of A:B:C, wherein A, B, and C are each different and each in a range of about 0.025 to about 0.95.
Claim 7
Dependent Claim
71 words
The semiconductor device of claim 5 , wherein the channel includes the first binary oxide, the second binary oxide, the third binary oxide, and a fourth binary oxide selected from ZnO, CdO, SrO, CaO, and MgO and having an atomic composition of a first metal:second metal:third metal:fourth metal ratio of A:B:C:D, wherein A, B, C, and D are each different and each in a range of about 0.017 to about 0.95.
Claim 8
Dependent Claim
50 words
The semiconductor device of claim 1 , wherein the channel includes the first binary oxide and the second binary oxide selected from within one of a first group of ZnO, CdO, SrO, CaO, and MgO and a second group of In 2 O 3 and Ga 2 O 3 .
Claim 9
Dependent Claim
67 words
The semiconductor device of claim 7 , wherein the channel includes the first binary oxide and the second binary oxide selected from within one of a first group of ZnO, CdO, SrO, CaO, and MgO, the second group of In 2 O 3 and Ga 2 O 3 , and a third group of SnO 2 , GeO 2 , PbO 2 , and TiO 2 .
Claim 10
Dependent Claim
75 words
The semiconductor device of claim 8 , wherein the channel includes the first binary oxide, the second binary oxide, and a third binary oxide selected from within the third group SnO 2 , GeO 2 , PbO 2 , and TiO 2 and having an atomic composition of a first metal:second metal:third metal ratio of A:B:C, wherein A, B, and C are each different and each in a range of about 0.025 to about 0.95.
Claim 11
Dependent Claim
81 words
The semiconductor device of claim 9 , wherein the channel includes the first binary oxide, the second binary oxide, the third binary oxide, and a fourth binary oxide selected from within the third group SnO 2 , GeO 2 , PbO 2 , and TiO 2 and having an atomic composition of a first metal:second metal:third metal:fourth metal ratio of A:B:C:D, wherein A, B, C, and D are each different and each in a range of about 0.017 to about 0.95.
Claim 12
Dependent Claim
68 words
A semiconductor device, comprising: a drain electrode; a source electrode; means for carrying electron flow to electrically couple the drain electrode and the source electrode, wherein the means for carrying electron flow includes a first binary oxide selected from SrO and CaO and a second binary oxide selected from CdO, ZnO and MgO; a gate electrode; and a gate dielectric positioned between the gate electrode and the channel.
Claim 13
Dependent Claim
68 words
A semiconductor device, comprising: a drain electrode; a source electrode; means for carrying electron flow to electrically couple the drain electrode and the source electrode, wherein the means for carrying electron flow includes a first binary oxide selected from SrO and CaO and a second binary oxide selected from CdO, ZnO and MgO; a gate electrode; and a gate dielectric positioned between the gate electrode and the channel.
Claim 14
Dependent Claim
44 words
The semiconductor device of claim 11 , wherein the means for carrying electron flow includes an atomic composition of a first metal(A):second metal (B) ratio (A:B), wherein A and B are each different and each in a range of about 0.05 to about 0.95.
Claim 15
Dependent Claim
25 words
The semiconductor device of claim 11 , wherein the channel includes one of an amorphous form, a single-phase crystalline form, and a mixed-phase crystalline form.
Claim 16
Dependent Claim
30 words
The semiconductor device of claim 11 , wherein at least one of the drain electrode, the source electrode, the channel, and gate electrode, and the gate dielectric are substantially transparent.
Claim 17
Dependent Claim
59 words
The semiconductor device of claim 11 , wherein the means for carrying electron flow includes a third binary oxide from ZnO, CdO, SrO, CaO, and MgO and having an atomic composition of a first metal:second metal:third metal ratio of A:B:C, wherein A, B, and C are each different and each in a range of about 0.025 to about 0.95.
Claim 18
Dependent Claim
75 words
The semiconductor device of claim 15 , wherein the means for carrying electron flow includes the first binary oxide, the second binary oxide, the third binary oxide, and a fourth binary oxide selected from ZnO, CdO, SrO, CaO, and MgO and having an atomic composition of a first metal:second metal:third metal:fourth metal ratio of A:B:C:D, wherein A, B, C, and D are each different and each in a range of about 0.017 to about 0.95.
Claim 19
Dependent Claim
54 words
The semiconductor device of claim 11 , wherein the means for carrying electron flow includes a first binary oxide and a second binary oxide selected from within one of a first group of ZnO, CdO, SrO, CaO, and MgO and a second group of In 2 O 3 and Ga 2 O 3 .
Claim 20
Dependent Claim
72 words
The semiconductor device of claim 17 , wherein the means for carrying electron flow includes a first binary oxide and a second binary oxide selected from within one of the first group of ZnO, CdO, SrO, CaO, and MgO, the second group of In 2 O 3 , and Ga 2 O 3 , and a third group of SnO 2 , GeO 2 , PbO 2 , and TiO 2 .
Claim 21
Dependent Claim
79 words
The semiconductor device of claim 18 , wherein the means for carrying electron flow includes the first binary oxide, the second binary oxide, and a third binary oxide selected from within the third group SnO 2 , GeO 2 , PbO 2 , and TiO 2 and having an atomic composition of a first metal:second metal:third metal ratio of A:B:C, wherein A, B, and C are each different and each in a range of about 0.025 to about 0.95.
Claim 22
Dependent Claim
85 words
The semiconductor device of claim 19 , wherein the means for carrying electron flow includes the first binary oxide, the second binary oxide, the third binary oxide, and a fourth binary oxide selected from within the third group SnO 2 , GeO 2 , PbO 2 , and TiO 2 and having an atomic composition of a first metal:second metal:third metal:fourth metal ratio of A:B:C:D, wherein A, B, C, and D are each different and each in a range of about 0.017 to about 0.95.
Claim 23
Dependent Claim
73 words
A semiconductor device formed by the steps, comprising: providing a drain electrode; providing a source electrode; providing a precursor composition including a first binary oxide selected from SrO and CaO and a second binary oxide selected from CdO, ZnO, and MgO; depositing a channel from the precursor composition contacting the drain electrode and the source electrode; providing a gate electrode; and providing a gate dielectric positioned between the gate electrode and the channel.
Claim 24
Dependent Claim
73 words
A semiconductor device formed by the steps, comprising: providing a drain electrode; providing a source electrode; providing a precursor composition including a first binary oxide selected from SrO and CaO and a second binary oxide selected from CdO, ZnO, and MgO; depositing a channel from the precursor composition contacting the drain electrode and the source electrode; providing a gate electrode; and providing a gate dielectric positioned between the gate electrode and the channel.
Claim 25
Dependent Claim
49 words
The semiconductor device of claim 21 , wherein providing the precursor composition includes step for providing the precursor composition having an atomic composition of a first metal(A):second metal (B) ratio (A:B), wherein A and B are each different and each in a range of about 0.05 to about 0.95.
Claim 26
Dependent Claim
35 words
The semiconductor device of claim 21 , wherein forming a channel includes: step for vaporizing the precursor composition to form vaporized precursor composition; and depositing the vaporized precursor composition using a physical vapor deposition technique.
Claim 27
Dependent Claim
60 words
The semiconductor device of claim 21 , wherein providing the precursor composition includes step for providing a third binary oxide from ZnO, CdO, SrO, CaO, and MgO and having an atomic composition of a first metal:second metal:third metal ratio of A:B:C, wherein A, B, and C are each different and each in a range of about 0.025 to about 0.95.
Claim 28
Dependent Claim
62 words
The semiconductor device of claim 24 , wherein providing the precursor composition includes step for providing a fourth binary oxide from ZnO, CdO, SrO, CaO, and MgO and having an atomic composition of a first metal:second metal:third metal:fourth metal ratio of A:B:C:D, wherein A, B, C, and D are each different and each in a range of about 0.017 to about 0.95.
Claim 29
Dependent Claim
55 words
The semiconductor device of claim 21 , wherein providing the precursor composition includes step for providing the first binary oxide and the second binary oxide selected from within one of a first group of ZnO, CdO, SrO, CaO, and MgO and a second group of In 2 O 3 and Ga 2 O 3 .
Claim 30
Dependent Claim
72 words
The semiconductor device of claim 26 , wherein providing the precursor composition includes step for providing the first binary oxide and the second binary oxide selected from within one of the first group of ZnO, CdO, SrO, CaO, and MgO, the second group of In 2 O 3 and Ga 2 O 3 , and a third group of SnO 2 , GeO 2 , PbO 2 , and TiO 2 .
Claim 31
Dependent Claim
80 words
The semiconductor device of claim 27 , wherein providing the precursor composition includes step for providing the first binary metal oxide, the second binary metal oxide, and a third binary oxide from the third group SnO 2 , GeO 2 , PbO 2 , and TiO 2 and having an atomic composition of a first metal:second metal:third metal ratio of A:B:C, wherein A, B, and C are each different and each in a range of about 0.025 to about 0.95.
Claim 32
Dependent Claim
85 words
The semiconductor device of claim 28 , wherein providing the precursor composition includes providing the first binary metal oxide, the second binary metal oxide, the third binary oxide, and a fourth binary oxide from the third group SnO 2 , GeO 2 , PbO 2 , and TiO 2 and having an atomic composition of a first metal:second metal:third metal: fourth metal ratio of A:B:C:D, wherein A, B, C and D are each different and each in a range of about 0.017 to about 0.95.
Claim 33
Dependent Claim
106 words
A display device, comprising: a plurality of display elements configured to operate collectively to display images, where each of the display elements includes a semiconductor device configured to control light emitted by the display element, the semiconductor device including: a drain electrode; a source electrode; a channel contacting the drain electrode and the source electrode, wherein the channel includes a first binary oxide selected from SrO and CaO and a second binary oxide selected from CdO, ZnO and MgO; a gate electrode; and a gate dielectric positioned between the gate electrode and the channel and configured to permit application of an electric field to the channel.
Claim 34
Dependent Claim
106 words
A display device, comprising: a plurality of display elements configured to operate collectively to display images, where each of the display elements includes a semiconductor device configured to control light emitted by the display element, the semiconductor device including: a drain electrode; a source electrode; a channel contacting the drain electrode and the source electrode, wherein the channel includes a first binary oxide selected from SrO and CaO and a second binary oxide selected from CdO, ZnO and MgO; a gate electrode; and a gate dielectric positioned between the gate electrode and the channel and configured to permit application of an electric field to the channel.
Claim 35
Dependent Claim
40 words
The display device of claim 30 , wherein the channel includes an atomic composition of a first metal(A):second metal (B) ratio (A:B), wherein A and B are each different and each in a range of about 0.05 to about 0.95.
Claim 36
Dependent Claim
55 words
The display device of claim 30 , wherein the channel includes a third binary oxide from ZnO, CdO, SrO, CaO, and MgO and having an atomic composition of a first metal:second metal:third metal ratio of A:B:C, wherein A, B, and C are each different and each in a range of about 0.025 to about 0.95.
Claim 37
Dependent Claim
57 words
The display device of claim 32 , wherein the channel includes a fourth binary oxide from ZnO, CdO, SrO, CaO, and MgO and having an atomic composition of a first metal:second metal:third metal:fourth metal ratio of A:B:C:D, wherein A, B, C, and D are each different and each in a range of about 0.017 to about 0.95.
Claim 38
Dependent Claim
50 words
The display device of claim 30 , wherein the channel includes the first binary oxide and the second binary oxide selected from within one of a first group of ZnO, CdO, SrO, CaO, and MgO and a second group of In 2 O 3 and Ga 2 O 2 .
Claim 39
Dependent Claim
67 words
The display device of claim 34 , wherein the channel includes the first binary oxide and the second binary oxide selected from within one of the first group of ZnO, CdO, SrO, CaO, and MgO, the second group of In 2 O 3 and Ga 2 O 2 , and a third group of SnO 2 , GeO 2 , PbO 2 , and TiO 2 .
Claim 40
Dependent Claim
75 words
The display device of claim 35 , wherein the channel includes the first binary oxide, the second binary oxide, and a third binary oxide selected from within the third group SnO 2 , GeO 2 , PbO 2 , and TiO 2 and having an atomic composition of a first metal:second metal:third metal ratio of A:B:C, wherein A, B, and C are each different and each in a range of about 0.025 to about 0.95.
Claim 41
Dependent Claim
81 words
The display device of claim 36 , wherein the channel includes the first binary oxide, the second binary oxide, the third binary oxide, and a fourth binary oxide selected from within the third group SnO 2 , GeO 2 , PbO 2 , and TiO 2 and having an atomic composition of a first metal:second metal:third metal:fourth metal ratio of A:B:C:D, wherein A, B, C, and D are each different and each in a range of about 0.017 to about 0.95.
Claim 42
Dependent Claim
30 words
The display device of claim 37 , wherein at least one of the drain electrode, the source electrode, the channel, and gate electrode, and the gate dielectric are substantially transparent.
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