US7067843B2
Expired / Lapsed
US
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Transparent oxide semiconductor thin film transistors
Assignee: Samsung Display Co Ltd
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Filing: 2003-09-24
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Granted: 2006-06-27
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Expires: 2023-09-24
Abstract
Abstract Transistors fabricated with transparent oxide semiconductors are provided. The semiconductors are metal oxides deposited without the intentional incorporation of additional doping elements, and enable the fabrication of transparent thin film transistors. The transparent transistors can be used to control pixels in a display, without significantly reducing the active area of the pixels.
Inventors
- 👤 Peter Francis Carcia
- 👤 Robert Scott McLean
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 09:19
CPC Classifications
H; H10; H10D; H10D30/00; H10D30/01; H10D30/021; H10D30/031; C; C23; C23C; C23C14/00; C23C14/06; C23C14/08; C23C14/086; H10D30/60; H10D30/67; H10D30/6729; H10D30/6737; H10D30/6739; H10D30/674; H10D30/6755; H10D99/00; H10P; H10P14/00; H10P14/20; H10P14/22; H10P14/29; H10P14/2901; H10P14/2922; H10P14/34; H10P14/3402; H10P14/3424; H10P14/3426; H10P14/24; H10P14/3434
Claims Analysis
Total Claims: 12
Claim 1
Independent Claim
60 words
A transistor comprising a an undoped, transparent, metal oxide semiconductor electrically coupled between a source electrode and a drain electrode, and a gate electrode electrically coupled to said undoped transparent metal oxide semiconductor, such that the application of a bias to the gate electrode controls electric current flow in the undoped transparent metal oxide semiconductor between source and drain electrodes.
Claim 2
Dependent Claim
60 words
A transistor comprising a an undoped, transparent, metal oxide semiconductor electrically coupled between a source electrode and a drain electrode, and a gate electrode electrically coupled to said undoped transparent metal oxide semiconductor, such that the application of a bias to the gate electrode controls electric current flow in the undoped transparent metal oxide semiconductor between source and drain electrodes.
Claim 3
Dependent Claim
20 words
A flat panel display comprising one or an array of transparent oxide semiconductor transistors as recited in claim 1 .
Claim 4
Dependent Claim
18 words
An active matrix imager comprising an array of transparent oxide semiconductor transistors as recited in claim 1 .
Claim 5
Dependent Claim
16 words
A sensor comprising an array of transparent oxide semiconductor transistors as recited in claim 1 .
Claim 6
Dependent Claim
18 words
A rf price label comprising an array of transparent oxide semiconductor transistors as recited in claim 1 .
Claim 7
Dependent Claim
18 words
A rf identification tag comprising an array of transparent oxide semiconductor transistors as recited in claim 1 .
Claim 8
Dependent Claim
18 words
A rf inventory tag comprising an array of transparent oxide semiconductor transistors as recited in claim 1 .
Claim 9
Dependent Claim
10 words
The transistor of claim 1 deposited on a flexible substrate.
Claim 10
Dependent Claim
38 words
The transistor of claim 1 further comprising a gate electrode, and wherein said source, drain and gate electrodes are fabricated from a material selected from the group consisting of zinc oxide, indium oxide, tin oxide, and cadmium oxide.
Claim 11
Dependent Claim
29 words
The transistor of claim 8 further comprising a gate dielectric fabricated from a material selected from the group consisting of zinc oxide, indium oxide, tin oxide, and cadmium oxide.
Claim 12
Dependent Claim
28 words
The transistor of claim 1 wherein said updoped, transparent metal oxide semiconductor comprises at least one oxide selected from: zinc oxide, indium oxide, tin oxide, and cadmium oxide.
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