US5942756A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Radiation detector and fabrication method
Assignee: GlassBridge Enterprises Inc
•
Filing: 1997-11-03
•
Granted: 1999-08-24
•
Expires: 2017-11-03
Abstract
Abstract A solid state radiation detector provides a plurality of modules disposed adjacent one another in a two-dimensional array. Each of the modules includes an array of thin film transistors. A continuous radiation detecting layer, such as a photoconductor layer, is disposed over the modules. The radiation detecting layer generates electrical charge representative of a pattern of radiation. The thin film transistors are used to sense the electrical charge on a pixel-by-pixel basis to form a representation of an image. A continuous insulating layer can be disposed between the radiation detecting layer and a continuous conducting layer.
Inventors
- 👤 Nang Tri Tran
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 09:55
CPC Classifications
H; H10; H10D; H10D84/00; H10D84/01; H10D84/0112; H10D84/02; H10D84/03; H10D84/038; H10D86/00; H10F; H10F39/00; H10F39/011; H10F39/016; H10F39/10; H10F39/12; H10F39/18; H10F39/189; H10F39/1898; H10F39/80; H10F39/804; Y; Y10; Y10S; Y10S148/00; Y10S148/15; Y10S438/00; Y10S438/942; Y10S438/945
Claims Analysis
Total Claims: 61
Claim 1
Independent Claim
145 words
A solid state x-ray detector comprising: a thin film transistor having a source region, a drain region, and a gate region; a first insulating layer formed over the thin film transistor; a via formed through the first insulating layer, the via extending through the first insulating layer to one of the drain region and the source region of the thin film transistor; a first metal filling the via, the first metal making electrical contact with the one of the drain region and the source region; a second metal forming a first electrode, the first electrode being in electrical contact with the first metal; a continuous photoconductor layer formed over the first insulating layer and the first electrode; a second insulating layer formed over the continuous photoconductor layer; and a layer of a third metal formed over the second insulating layer to form a second electrode.
Claim 2
Dependent Claim
145 words
A solid state x-ray detector comprising: a thin film transistor having a source region, a drain region, and a gate region; a first insulating layer formed over the thin film transistor; a via formed through the first insulating layer, the via extending through the first insulating layer to one of the drain region and the source region of the thin film transistor; a first metal filling the via, the first metal making electrical contact with the one of the drain region and the source region; a second metal forming a first electrode, the first electrode being in electrical contact with the first metal; a continuous photoconductor layer formed over the first insulating layer and the first electrode; a second insulating layer formed over the continuous photoconductor layer; and a layer of a third metal formed over the second insulating layer to form a second electrode.
Claim 3
Dependent Claim
15 words
The detector of claim 1, wherein the third metal is a transparent conducting metal oxide.
Claim 4
Dependent Claim
13 words
The detector of claim 1, wherein the third metal is indium tin oxide.
Claim 5
Dependent Claim
26 words
The detector of claim 1, wherein the photoconductor layer includes a material selected from the group of amorphous selenium, amorphous silicon, lead oxide, and selenium telluride.
Claim 6
Dependent Claim
14 words
The detector of claim 1, wherein the thin film transistor includes single crystal silicon.
Claim 7
Dependent Claim
12 words
The detector of claim 1, wherein the thin film transistor includes polysilicon.
Claim 8
Dependent Claim
13 words
The detector of claim 1, wherein the thin film transistor includes cadmium selenide.
Claim 9
Dependent Claim
21 words
The detector of claim 1, wherein the second metal has an atomic number (Z) of greater than or equal to 73.
Claim 10
Dependent Claim
189 words
A solid state x-ray detector array comprising: an array of thin film transistors, each of the thin film transistors having a source region, a drain region, and a gate region; a first insulating layer formed over the array of thin film transistors; a plurality of vias formed through the first insulating layer using microlithography, each of the vias extending through the first insulating layer to one of the drain region and the source region of one of the thin film transistors; a first metal filling each of the vias, the first metal making electrical contact with one of the drain region and the source region of one of the thin film transistors; a second metal formed over each of the vias to form a plurality of first electrodes, the first electrodes being in electrical contact with the first metal filling the respective one of the vias; a continuous photoconductor layer formed over the first insulating layer and the first electrodes; a second insulating layer formed over the continuous photoconductor layer; and a layer of a third metal formed over the second insulating layer to form a continuous second electrode.
Claim 11
Dependent Claim
189 words
A solid state x-ray detector array comprising: an array of thin film transistors, each of the thin film transistors having a source region, a drain region, and a gate region; a first insulating layer formed over the array of thin film transistors; a plurality of vias formed through the first insulating layer using microlithography, each of the vias extending through the first insulating layer to one of the drain region and the source region of one of the thin film transistors; a first metal filling each of the vias, the first metal making electrical contact with one of the drain region and the source region of one of the thin film transistors; a second metal formed over each of the vias to form a plurality of first electrodes, the first electrodes being in electrical contact with the first metal filling the respective one of the vias; a continuous photoconductor layer formed over the first insulating layer and the first electrodes; a second insulating layer formed over the continuous photoconductor layer; and a layer of a third metal formed over the second insulating layer to form a continuous second electrode.
Claim 12
Dependent Claim
15 words
The detector of claim 9, wherein the third metal is a transparent conducting metal oxide.
Claim 13
Dependent Claim
13 words
The detector of claim 9, wherein the third metal is indium tin oxide.
Claim 14
Dependent Claim
26 words
The detector of claim 9, wherein the photoconductor layer includes a material selected from the group of amorphous selenium, amorphous silicon, lead oxide, and selenium telluride.
Claim 15
Dependent Claim
16 words
The detector of claim 9, wherein each of the thin film transistors includes single crystal silicon.
Claim 16
Dependent Claim
14 words
The detector of claim 9, wherein each of the thin film transistors includes polysilicon.
Claim 17
Dependent Claim
15 words
The detector of claim 9, wherein each of the thin film transistors includes cadmium selenide.
Claim 18
Dependent Claim
21 words
The detector of claim 9, wherein the second metal has an atomic number (Z) of greater than or equal to 73.
Claim 19
Dependent Claim
98 words
A radiation detector comprising: a plurality of modules arranged in an array, each of the modules including a plurality of transistors; a first electrode layer formed over each of the modules, wherein the first electrode layer is patterned to form a plurality of electrodes in electrical contact with each of the transistors on one of the modules; a photoconductor layer formed over the first electrode layer, the photoconductor layer generating charge in response to radiation incident on the photoconductor layer; a dielectric layer formed over the photoconductor layer; and a second electrode layer formed over the dielectric layer.
Claim 20
Dependent Claim
98 words
A radiation detector comprising: a plurality of modules arranged in an array, each of the modules including a plurality of transistors; a first electrode layer formed over each of the modules, wherein the first electrode layer is patterned to form a plurality of electrodes in electrical contact with each of the transistors on one of the modules; a photoconductor layer formed over the first electrode layer, the photoconductor layer generating charge in response to radiation incident on the photoconductor layer; a dielectric layer formed over the photoconductor layer; and a second electrode layer formed over the dielectric layer.
Claim 21
Dependent Claim
24 words
The radiation detector of claim 17 being a medical radiation detector having an image-capture area of approximnately fourteen (14) inches by seventeen (17) inches.
Claim 22
Dependent Claim
27 words
The radiation detector of claim 17, wherein the photoconductor layer comprises an x-ray sensitive, charge-generating layer such that the radiation detector functions as a direct x-ray detector.
Claim 23
Dependent Claim
60 words
A radiation detector comprising a plurality of modules arranged in an array, each of the modules including a plurality of transistors, a first electrode layer formed over the transistors, a photoconductor layer formed over the first electrode layer, and a second electrode layer formed over the photoconductor layer, wherein the array is approximately fourteen inches by seventeen inches in area.
Claim 24
Dependent Claim
60 words
A radiation detector comprising a plurality of modules arranged in an array, each of the modules including a plurality of transistors, a first electrode layer formed over the transistors, a photoconductor layer formed over the first electrode layer, and a second electrode layer formed over the photoconductor layer, wherein the array is approximately fourteen inches by seventeen inches in area.
Claim 25
Dependent Claim
51 words
A radiation detector comprising: a substrate; a plurality of transistors positioned over the substrate; a first electrode layer positioned over the transistors; a radiation detecting layer positioned over the first electrode layer; an insulating layer positioned over the radiation detecting layer; and a second electrode layer positioned over the insulating layer.
Claim 26
Dependent Claim
51 words
A radiation detector comprising: a substrate; a plurality of transistors positioned over the substrate; a first electrode layer positioned over the transistors; a radiation detecting layer positioned over the first electrode layer; an insulating layer positioned over the radiation detecting layer; and a second electrode layer positioned over the insulating layer.
Claim 27
Dependent Claim
37 words
The detector of claim 21, wherein the first electrode layer is patterned to form a plurality of individual electrodes, each of the electrodes being electrically coupled to the radiation detecting layer and to one of the transistors.
Claim 28
Dependent Claim
40 words
The detector of claim 22, further comprising a second insulating layer positioned over the transistors, and conductive vias formed through the second insulating layer, each of the conductive vias electrically coupling one of the electrodes to one of the transistors.
Claim 29
Dependent Claim
16 words
The detector of claim 21, wherein the second electrode layer comprises a transparent conducting metal oxide.
Claim 30
Dependent Claim
28 words
The detector of claim 21, wherein the radiation detecting layer includes a material selected from the group consisting of amorphous selenium, amorphous silicon, lead oxide, and selenium telluride.
Claim 31
Dependent Claim
26 words
The detector of claim 21, wherein each of the transistors includes a material selected from the group consisting of single crystal silicon, polysilicon, and cadmium selenide.
Claim 32
Dependent Claim
28 words
The detector of claim 21, wherein the radiation detecting layer comprises an x-ray sensitive layer enabling the detector to function as a direct x-ray detector for medical applications.
Claim 33
Dependent Claim
23 words
The detector of claim 27, wherein the x-ray sensitive layer has an image-capture area of approximately fourteen (14) inches by seventeen (17) inches.
Claim 34
Dependent Claim
26 words
A radiation detector comprising, in order, a plurality of transistors, a first electrode layer, a radiation detecting layer, an insulating layer, and a second electrode layer.
Claim 35
Dependent Claim
26 words
A radiation detector comprising, in order, a plurality of transistors, a first electrode layer, a radiation detecting layer, an insulating layer, and a second electrode layer.
Claim 36
Dependent Claim
37 words
The detector of claim 29, wherein the first electrode layer is patterned to form a plurality of individual electrodes, each of the electrodes being electrically coupled to the radiation detecting layer and to one of the transistors.
Claim 37
Dependent Claim
45 words
The detector of claim 29, further comprising a second insulating layer positioned between the transistors and the first electrode layer, and conductive vias formed through the second insulating layer, each of the conductive vias electrically coupling one of the electrodes to one of the transistors.
Claim 38
Dependent Claim
16 words
The detector of claim 29, wherein the second electrode layer comprises a transparent conducting metal oxide.
Claim 39
Dependent Claim
28 words
The detector of claim 29, wherein the radiation detecting layer includes a material selected from the group consisting of amorphous selenium, amorphous silicon, lead oxide, and selenium telluride.
Claim 40
Dependent Claim
28 words
The detector of claim 29, wherein each of the plurality of transistors includes a material selected from the group consisting of single crystal silicon, polysilicon, and cadmium selenide.
Claim 41
Independent Claim
55 words
A method for fabricating a radiation detector comprising: positioning a plurality of thin film transistors over a substrate; positioning a first electrode layer over the transistors; positioning a radiation detecting layer over the first electrode layer; positioning an insulating layer over the radiation detecting layer; and positioning a second electrode layer over the insulating layer.
Claim 42
Independent Claim
55 words
A method for fabricating a radiation detector comprising: positioning a plurality of thin film transistors over a substrate; positioning a first electrode layer over the transistors; positioning a radiation detecting layer over the first electrode layer; positioning an insulating layer over the radiation detecting layer; and positioning a second electrode layer over the insulating layer.
Claim 43
Dependent Claim
37 words
The method of claim 35, further comprising patterning the first electrode layer to form a plurality of individual electrodes, each of the electrodes being electrically coupled to the radiation detecting layer and to one of the transistors.
Claim 44
Dependent Claim
47 words
The method of claim 36, further comprising forming a second insulating layer between the thin film transistors and the first electrode layer, and forming conductive vias through the second insulating layer, each of the conductive vias electrically coupling one of the electrodes to one of the transistors.
Claim 45
Dependent Claim
16 words
The method of claim 35, wherein the second electrode layer comprises a transparent conducting metal oxide.
Claim 46
Dependent Claim
28 words
The method of claim 35, wherein the radiation detecting layer includes a material selected from the group consisting of amorphous selenium, amorphous silicon, lead oxide, and selenium telluride.
Claim 47
Dependent Claim
28 words
The method of claim 35, wherein each of the thin film transistors includes a material selected from the group consisting of single crystal silicon, polysilicon, and cadmium selenide.
Claim 48
Dependent Claim
81 words
A medical radiation detector comprising: a plurality of transistors arrayed over a surface area of approximately fourteen (14) inches by seventeen (17) inches; a continuous radiation detecting layer positioned over the transistors and electrically coupled to the transistors; a first electrode layer positioned between the transistors and the radiation detecting layer; a second electrode layer positioned over the radiation detecting layer opposite the first electrode layer; and an insulating layer positioned between the second electrode layer and the radiation detecting layer.
Claim 49
Dependent Claim
81 words
A medical radiation detector comprising: a plurality of transistors arrayed over a surface area of approximately fourteen (14) inches by seventeen (17) inches; a continuous radiation detecting layer positioned over the transistors and electrically coupled to the transistors; a first electrode layer positioned between the transistors and the radiation detecting layer; a second electrode layer positioned over the radiation detecting layer opposite the first electrode layer; and an insulating layer positioned between the second electrode layer and the radiation detecting layer.
Claim 50
Dependent Claim
73 words
An assembly for use within a radiation detector comprising: a plurality of submodules arranged in an array to form a single module, each of the submodules including a plurality of transistors, a first electrode layer formed over the transistors, a radiation sensitive layer formed over the first electrode layer, and a second electrode layer formed over the radiation sensitive layer, wherein the single module is approximately fourteen inches by seventeen inches in area.
Claim 51
Dependent Claim
73 words
An assembly for use within a radiation detector comprising: a plurality of submodules arranged in an array to form a single module, each of the submodules including a plurality of transistors, a first electrode layer formed over the transistors, a radiation sensitive layer formed over the first electrode layer, and a second electrode layer formed over the radiation sensitive layer, wherein the single module is approximately fourteen inches by seventeen inches in area.
Claim 52
Dependent Claim
18 words
The assembly of claim 42, wherein the radiation sensitive layer comprises a single continuous layer over the submodules.
Claim 53
Dependent Claim
16 words
The assembly of claim 42, wherein the radiation sensitive layer comprises an x-ray radiation sensitive layer.
Claim 54
Dependent Claim
23 words
The assembly of claim 42, wherein the assembly further comprises a dielectric layer between the radiation sensitive layer and the second electrode layer.
Claim 55
Dependent Claim
23 words
The assembly of claim 42, wherein the assembly further comprises a dielectric layer between the radiation sensitive layer and the first electrode layer.
Claim 56
Dependent Claim
55 words
An assembly for use within a radiation detector comprising: a plurality of submodules arranged in an array to form a single module, each submodule comprising a plurality of transistors, the submodules being positioned in a side-by-side relationship such that a seam is defined between the submodules; and a radiation sensitive material positioned over the seam.
Claim 57
Dependent Claim
55 words
An assembly for use within a radiation detector comprising: a plurality of submodules arranged in an array to form a single module, each submodule comprising a plurality of transistors, the submodules being positioned in a side-by-side relationship such that a seam is defined between the submodules; and a radiation sensitive material positioned over the seam.
Claim 58
Dependent Claim
16 words
The assembly of claim 47, further comprising a first electrode layer positioned above the single module.
Claim 59
Dependent Claim
27 words
The assembly of claim 47, further comprising a plurality of electrodes positioned above the single module, each of the electrodes being associated with one of the transistors.
Claim 60
Dependent Claim
76 words
A radiation detector comprising: a plurality of detector submodules, each of the submodules including an array of transistors, wherein the submodules are positioned in a side-by-side relationship and define a seam; an array of pixelized electrodes, each of the electrodes being electrically coupled to one of the transistors; a radiation sensitive material disposed over the submodules, wherein the radiation sensitive material is positioned over the seam; and an electrode layer formed over the radiation sensitive material.
Claim 61
Dependent Claim
76 words
A radiation detector comprising: a plurality of detector submodules, each of the submodules including an array of transistors, wherein the submodules are positioned in a side-by-side relationship and define a seam; an array of pixelized electrodes, each of the electrodes being electrically coupled to one of the transistors; a radiation sensitive material disposed over the submodules, wherein the radiation sensitive material is positioned over the seam; and an electrode layer formed over the radiation sensitive material.
References Cited (Backward Citations)
US3825763A
Cited
US4069355A
Cited
US4129848A
Cited
US4226898A
Cited
US4467342A
Cited
US4511799A
Cited
US4788582A
Cited
JPS6016462A
Cited
US4543490A
Cited
US4608749A
Cited
US4929569A
Cited
US4672454A
Cited
US4675739A
Cited
US4769338A
Cited
US4689487A
Cited
EP0175578A2
Cited
US4735908A
Cited
US4799094A
Cited
JPS6251264A
Cited
US5043582A
Cited
US5220170A
Cited
US4810881A
Cited
US4778773A
Cited
US4866003A
Cited
US4943837A
Cited
JPS63261880A
Cited
US4859617A
Cited
US4982095A
Cited
US4940901A
Cited
US4883766A
Cited
GB2211992A
Cited
US4954706A
Cited
EP0338766A1
Cited
US4980553A
Cited
JPH0258304A
Cited
JPH0282578A
Cited
US4999484A
Cited
EP0377365A1
Cited
US5079426A
Cited
JPH0397271A
Cited
EP0419160A1
Cited
US5132541A
Cited
EP0441521A1
Cited
EP0449585A1
Cited
US5182624A
Cited
US5187369A
Cited
US5105087A
Cited
US5286659A
Cited
US5168160A
Cited
US5315101A
Cited
US5254480A
Cited
US5319206A
Cited
US5381014A
Cited
US5381014B1
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2002-08-23 | 2003-02-22 | 2003-08-24 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2006-08-23 | 2007-02-22 | 2007-08-24 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2010-08-23 | 2011-02-22 | 2011-08-24 | $7700.00 | Window Closed / Lapsed |