US4866003A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Plasma vapor deposition of an improved passivation film using electron cyclotron resonance
Assignee: Yamaha Corp
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Filing: 1987-11-20
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Granted: 1989-09-12
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Expires: 2007-11-20
Abstract
Abstract For enhancement of device stability, there is disclosed a semiconductor device fabricated on a semiconductor substrate comprising (a) source and drain regions formed in a surface portion of the semiconductor substrate and spaced from each other by a channel region, (b) a gate insulating film formed on the channel region, (c) a gate electrode structure formed on the gate insulating film, and (d) a passivation film of an insulating material covering the gate electrode structure and containing hydrogen-bonded-silicons equal in number to or less than 5×10 21 per cm 3 , and the unstable hydrogen-bonded-silicons are decreased in number so that the semiconductor device only have a decreased trap density which results in stable operation.
Inventors
- 👤 Katsuyuki Yokoi
- 👤 Shigeru Suga
- 👤 Toshio Fujioka
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-31 18:42
CPC Classifications
H; H10; H10W; H10W74/00; H10W74/40; H10W74/43; H10W74/10; H10W74/131; H10W74/137; H10P; H10P14/00; H10P14/60; H10P14/63; H10P14/6326; H10P14/6328; H10P14/6334; H10P14/6336; H10P14/66; H10P14/668; H10P14/6681; H10P14/6682; H10P14/69; H10P14/692; H10P14/6921; H10P14/69215; H10P14/694; H10P14/6943; H10P14/69433; Y; Y10; Y10S; Y10S148/00; Y10S148/114; Y10S438/00; Y10S438/958
Claims Analysis
Total Claims: 4
Claim 1
Independent Claim
113 words
A process of fabricating a semiconductor devise, comprising the steps of: (a) preparing a multi-layer structure having source and drain regions formed in respective portions of a semiconductor substrate, a gate insulating film formed over an area between the source and drain regions and a gate electrode structure formed on the gate insulating film; and (b) forming a passivation film covering said multi-layer structure by a plasma-assisted chemical vapor deposition technique using a plasma associated with an electron cyclotron resonance, said passivation film being formed with a contained number of hydrogen-bonded-silicons less than or equal to 5×10 21 per cubic centimeter, thereby improving the sensitivity of the passivation film to injected hot carriers.
Claim 2
Dependent Claim
113 words
A process of fabricating a semiconductor devise, comprising the steps of: (a) preparing a multi-layer structure having source and drain regions formed in respective portions of a semiconductor substrate, a gate insulating film formed over an area between the source and drain regions and a gate electrode structure formed on the gate insulating film; and (b) forming a passivation film covering said multi-layer structure by a plasma-assisted chemical vapor deposition technique using a plasma associated with an electron cyclotron resonance, said passivation film being formed with a contained number of hydrogen-bonded-silicons less than or equal to 5×10 21 per cubic centimeter, thereby improving the sensitivity of the passivation film to injected hot carriers.
Claim 3
Dependent Claim
27 words
A process as set forth in claim 1, in which said plasma-assisted chemical vapor deposition is carried out by using a gaseous mixture having silane and nitrogen.
Claim 4
Dependent Claim
29 words
A process as set forth in claim 1, in which said plasma-assisted chemical vapor deposition is carried out at a pressure equal to or less than 8×10 -3 Torr.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1992-09-11 | 1993-03-13 | 1993-09-12 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1996-09-11 | 1997-03-13 | 1997-09-12 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2000-09-11 | 2001-03-13 | 2001-09-12 | $7700.00 | Window Closed / Lapsed |