US4543266A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of fabricating a membrane structure
Assignee: NTT Inc
•
Filing: 1984-10-15
•
Granted: 1985-09-24
•
Expires: 2004-10-15
Abstract
Abstract A thin film which becomes a membrane is formed over one major surface of a substrate by a plasma deposition process utilizing microwave electron cyclotron resonance. The substrate is then removed, other than a portion of the substrate which remains as a frame, so as to form a membrane structure. A dense and high quality membrane is formed at a low temperature and the internal stress of the membrane controlled by varying the conditions under which the plasma deposition process is carried out and by heat treating the thin film after its formation.
Inventors
- 👤 Seitaro Matsuo
- 👤 Mikiho Kiuchi
- 👤 Misao Sekimoto
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 11:14
CPC Classifications
G; G03; G03F; G03F1/00; G03F1/22; Y; Y10; Y10S; Y10S438/00; Y10S438/977
Claims Analysis
Total Claims: 13
Claim 1
Independent Claim
212 words
A process for fabricating a membrane structure having a predetermined internal stress, comprising the steps of (a) providing a substrate having first and second surfaces; (b) forming by plasma deposition over the first surface of said substrate a thin film selected from the group consisting essentially of silicon nitride, boron nitride and silicon carbide, said plasma deposition utilizing microwave electron cyclotron resonance generated by microwave power within the range 150 to 250 watts, the temperature of said substrate after deposition reaching a value determined primarily by the heat generated by said plasma deposition; (c) heating said substrate, after deposition of said thin film on the first surface thereof, to a temperature in the range 300°-800° C., said temperature being higher than the temperature of said substrate after plasma deposition of said thin film and dependent upon the value of said microwave power within said range of 150 to 250 watts; and (d) removing a portion of said substrate to provide a frame supporting said thin film, whereby a membrane structure is formed having an internal stress in the range 0.5×10 9 to 3×10 9 dyne/cm 2 , the amount of said stress being determined by the temperature to which said substrate was heated in step (c) after deposition of said thin film.
Claim 2
Dependent Claim
212 words
A process for fabricating a membrane structure having a predetermined internal stress, comprising the steps of (a) providing a substrate having first and second surfaces; (b) forming by plasma deposition over the first surface of said substrate a thin film selected from the group consisting essentially of silicon nitride, boron nitride and silicon carbide, said plasma deposition utilizing microwave electron cyclotron resonance generated by microwave power within the range 150 to 250 watts, the temperature of said substrate after deposition reaching a value determined primarily by the heat generated by said plasma deposition; (c) heating said substrate, after deposition of said thin film on the first surface thereof, to a temperature in the range 300°-800° C., said temperature being higher than the temperature of said substrate after plasma deposition of said thin film and dependent upon the value of said microwave power within said range of 150 to 250 watts; and (d) removing a portion of said substrate to provide a frame supporting said thin film, whereby a membrane structure is formed having an internal stress in the range 0.5×10 9 to 3×10 9 dyne/cm 2 , the amount of said stress being determined by the temperature to which said substrate was heated in step (c) after deposition of said thin film.
Claim 3
Dependent Claim
59 words
A process for fabricating a membrane structure as claimed in claim 1, wherein the step (c) the temperature to whcih said substrate is heated is at least 300° C. when said microwave power is 150 watts, at least 400° C. when said microwave power is 200 watts and at least 500° C. when said microwave power is 250 watts.
Claim 4
Dependent Claim
28 words
A process for fabricating a membrane structure as claimed in claim 1, wherein in said step (b), said plasma deposition process is carried out without heating said substrate.
Claim 5
Dependent Claim
66 words
A process for fabricating a membrane structure as claimed in claim 1, wherein the portion of said substrate comprising said frame consists of a material having a low coefficient of thermal expansion and a high degree of dimensional accuracy, the other portion of said substrate comprising an easily dissolved material, and wherein in step (d) the portion of said substrate removed is dissolved by a solvent.
Claim 6
Dependent Claim
80 words
A process for fabricating a membrane structure as claimed in claim 3, wherein said step (d) further comprises: a first sub-step of forming a further thin film over the second surface of said substrate; and a second sub-step of removing a portion of said further thin film, the remaining portion of said further thin film serving as a mask pattern for the formation of said frame, said removal of a portion of said substrate following said first and second sub-steps.
Claim 7
Dependent Claim
40 words
A process for fabricating a membrane structure as claimed in claim 3, wherein an X-ray absorption pattern for X-ray lithography is formed on said thin film, whereby the thus obtained membrane is used as a mask for said X-ray lithography.
Claim 8
Dependent Claim
40 words
A process for fabricating a membrane structure as claimed in claim 5, wherein an X-ray absorption pattern for X-ray lithography is formed on said thin film, whereby the thus obtained membrane is used as a mask for said X-ray lithography.
Claim 9
Dependent Claim
22 words
A process for fabricating a membrane structure as claimed in claim 7, wherein said X-ray absorption pattern is formed after step (d).
Claim 10
Dependent Claim
23 words
A process for fabricating a membrane structure as claimed in claim 7, wherein said X-ray absorption pattern is formed after said first sub-step.
Claim 11
Dependent Claim
23 words
A process for fabricating a membrane structure as claimed in claim 7, wherein said X-ray absorption pattern is formed after said second sub-step.
Claim 12
Dependent Claim
27 words
A process for fabricating a membrane structure as claimed in claim 5, wherein said further thin film is formed by plasma deposition utilizing microwave electron cyclotron resonance.
Claim 13
Dependent Claim
80 words
A process for fabricating a membrane structure as claimed in claim 1, wherein said step (d) further comprises: a first sub-step of forming a further thin film over the second surface of said substrate; and a second sub-step of removing a portion of said further thin film, the remaining portion of said further thin film serving as a mask pattern for the formation of said frame, said removal of a portion of said substrate following said first and second sub-steps.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1988-09-23 | 1989-03-25 | 1989-09-24 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1992-09-23 | 1993-03-25 | 1993-09-24 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1996-09-23 | 1997-03-25 | 1997-09-24 | $7700.00 | Window Closed / Lapsed |