US4883766A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of producing thin film transistor
Assignee: Ricoh Research Institute of General Electronics Co Ltd
•
Filing: 1988-11-10
•
Granted: 1989-11-28
•
Expires: 2008-11-10
Abstract
Abstract A method of producing a thin film transistor comprises the steps of preparing a structure having a substrate, an active layer and a diffusion layer formed on the substrate, and a gate electrode formed on the active layer, forming on the structure an interlayer insulator layer made of a silicon oxide hydrate (SiO x H y ) having a predetermined composition, forming contact holes in the interlayer insulator layer, forming a wiring layer on the interlayer insulator layer, and carrying out a thermal process thereby diffusing hydrogen atoms within the interlayer insulator layer into at least the active layer and the diffusion layer.
Inventors
- 👤 Mamoru Ishida
- 👤 Shunichi Inaki
- 👤 Yoshikazu Akiyama
- 👤 Mitsuhiro Kohata
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-31 10:12
CPC Classifications
H; H10; H10D; H10D30/00; H10D30/01; H10D30/021; H10D30/031; H10D30/0312; H10D30/0314; H10D30/0321; H10P; H10P95/00; H10P95/94; Y; Y10; Y10S; Y10S438/00; Y10S438/909
Claims Analysis
Total Claims: 22
Claim 1
Independent Claim
103 words
A method of producing a thin film transistor comprising the steps of: preparing a structure having a substrate, an active layer and a diffusion layer formed on the substrate, and a gate electrode formed on the active layer; forming on said structure an interlayer insulator layer made of a silicon oxide hydrate (SiO x H y ) having a predetermined composition; forming contact holes in said interlayer insulator layer; forming a wiring layer on said interlayer insulator layer; and carrying out a thermal process thereby diffusing hydrogen atoms within said interlayer insulator layer into at least said active layer and said diffusion layer.
Claim 2
Independent Claim
103 words
A method of producing a thin film transistor comprising the steps of: preparing a structure having a substrate, an active layer and a diffusion layer formed on the substrate, and a gate electrode formed on the active layer; forming on said structure an interlayer insulator layer made of a silicon oxide hydrate (SiO x H y ) having a predetermined composition; forming contact holes in said interlayer insulator layer; forming a wiring layer on said interlayer insulator layer; and carrying out a thermal process thereby diffusing hydrogen atoms within said interlayer insulator layer into at least said active layer and said diffusion layer.
Claim 3
Dependent Claim
42 words
A method of producing a thin film transistor as claimed in claim 1 in which said step of forming the interlayer insulator layer uses an SiO x H y , where x=2-a, y=2a and a is greater than or equal to 0.01.
Claim 4
Dependent Claim
40 words
A method of producing a thin film transistor as claimed in claim 1 in which said step of forming the interlayer insulator layer uses an SiO x H y having a hydrogen content of 10 -3 to 20 atomic percent.
Claim 5
Dependent Claim
38 words
A method of producing a thin film transistor as claimed in claim 3 in which said step of forming the interlayer insulator layer forms said interlayer insulator layer to a thickness of approximately 50 Å to 1.5 microns.
Claim 6
Dependent Claim
34 words
A method of producing a thin film transistor as claimed in claim 1 in which said step of forming the interlayer insulator layer forms said interlayer insulator layer by a plasma chemical vapor deposition.
Claim 7
Dependent Claim
31 words
A method of producing a thin film transistor as claimed in claim 1 in which said step of forming the structure forms said active layer and said diffusion layer from polysilicon.
Claim 8
Dependent Claim
45 words
A method of producing a thin film transistor as claimed in claim 1 in which said step of carrying out the thermal process further diffuses the hydrogen atoms within said interlayer insulator layer into said gate electrode, thereby reducing a resistivity of said gate electrode.
Claim 9
Dependent Claim
31 words
A method of producing a thin film transistor as claimed in claim 1 in which said step of forming the wiring layer forms an aluminum (Al) layer as said wiring layer.
Claim 10
Dependent Claim
35 words
A method of producing a thin film transistor as claimed in claim 8 in which said step of carrying out the thermal process is a sintering process carried out with respect to said Al layer.
Claim 11
Dependent Claim
38 words
A method of producing a thin film transistor as claimed in claim 9 in which said sintering process is carried out in an inert gas gas at 350° C. to 500° C. for 20 minutes to 60 minutes.
Claim 12
Independent Claim
107 words
A method of producing a thin film transistor comprising the steps of: preparing a structure having a substrate, an active layer and a diffusion layer formed on the substrate, and a gate electrode formed on the active layer; forming on said structure an interlayer insulator layer made of a silicon oxide hydrate (SiO x H y ) having a predetermined composition; forming contact holes in said interlayer insulator layer; forming a wiring layer on said interlayer insulator layer; patterning said wiring layer; and carrying out a thermal process thereby diffusing hydrogen atoms within said interlayer insulator layer into at least said active layer and said diffusion layer.
Claim 13
Independent Claim
107 words
A method of producing a thin film transistor comprising the steps of: preparing a structure having a substrate, an active layer and a diffusion layer formed on the substrate, and a gate electrode formed on the active layer; forming on said structure an interlayer insulator layer made of a silicon oxide hydrate (SiO x H y ) having a predetermined composition; forming contact holes in said interlayer insulator layer; forming a wiring layer on said interlayer insulator layer; patterning said wiring layer; and carrying out a thermal process thereby diffusing hydrogen atoms within said interlayer insulator layer into at least said active layer and said diffusion layer.
Claim 14
Dependent Claim
42 words
A method of producing a thin film transistor as claimed in claim 11 in which said step of forming the interlayer insulator layer uses an SiO x H y , where x=2-a, y=2a and a is greater than or equal to 0.01.
Claim 15
Dependent Claim
40 words
A method of producing a thin film transistor as claimed in claim 11 in which said step of forming the interlayer insulator layer uses an SiO x H y having a hydrogen content of 10 -3 to 20 atomic percent.
Claim 16
Dependent Claim
38 words
A method of producing a thin film transistor as claimed in claim 13 in which said step of forming the interlayer insulator layer forms said interlayer insulator layer to a thickness of approximately 50 Å to 1.5 microns.
Claim 17
Dependent Claim
34 words
A method of producing a thin film transistor as claimed in claim 11 in which said step of forming the interlayer insulator layer forms said interlayer insulator layer by a plasma chemical vapor deposition.
Claim 18
Dependent Claim
31 words
A method of producing a thin film transistor as claimed in claim 11 in which said step of forming the structure forms said active layer and said diffusion layer from polysilicon.
Claim 19
Dependent Claim
45 words
A method of producing a thin film transistor as claimed in claim 11 in which said step of carrying out the thermal process further diffuses the hydrogen atoms within said interlayer insulator layer into said gate electrode, thereby reducing a resistivity of said gate electrode.
Claim 20
Dependent Claim
31 words
A method of producing a thin film transistor as claimed in claim 11 in which said step of forming the wiring layer forms an aluminum (Al) layer as said wiring layer.
Claim 21
Dependent Claim
35 words
A method of producing a thin film transistor as claimed in claim 18 in which said step of carrying out the thermal process is a sintering process carried out with respect to said Al layer.
Claim 22
Dependent Claim
38 words
A method of producing a thin film transistor as claimed in claim 19 in which said sintering process is carried out in an inert gas gas at 350° C. to 500° C. for 20 minutes to 60 minutes.
References Cited (Backward Citations)
GB1214686A
Cited
US3852120A
Cited
US3849204A
Cited
US3923559A
Cited
GB2056174A
Cited
JPS5927575A
Cited
JPS63165A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1992-11-27 | 1993-05-29 | 1993-11-28 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1996-11-27 | 1997-05-29 | 1997-11-28 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2000-11-27 | 2001-05-29 | 2001-11-28 | $7700.00 | Window Closed / Lapsed |