Manufacture of semiconductor device

Abstract

Abstract PURPOSE:To reduce the generation of thermal strain, and to improve reliability and performance by executing heat treatment at a temperature higher than a temperature where an insulating film containing hydrogen is formed, diffusing hydrogen existing in the film into a semiconductor device and shaping the insulating film as a protective film. CONSTITUTION:An silicon thin-film 2, a gate oxide film 3 and a gate electrode 4 are formed onto an insulating substrate 1, and an impurity is implanted to the thin-film 2 through self-alignment, using the gate electrode 4 as a mask, thus shaping source-drain. Layer insulating films 5 and contact windows are formed, wirings 6 are shaped and an silicon nitride film 7 is formed as an insulating film containing hydrogen. When executing heat treatment at a temperature higher than a temperature where the silicon nitride film is shaped, hydrogen is diffused into the silicon film 2, a defect is buried, a potential barrier is reduced, mobility is increased and threshold voltage is lowered. Lastly, a final protective film 8 is formed.

Inventors

• 👤 Michihiro Miyauchi
• 👤 美智博 宮内
• 👤 Kentaro Setsune
• 👤 瀬恒　謙太郎
• 👤 Takashi Hirao
• 👤 孝 平尾

Bibliographic Details