Method of manufacturing a solid-state image pickup device

Claim 1

A method of manufacturing a solid-state image pickup device having plural pixels, comprising the steps of: forming on a semiconductor substrate signal storage regions for each pixel, and signal read-out regions; depositing a first insulating film on said signal storage regions and said signal read-out regions; forming contact holes in said first insulating film; forming first metallic electrodes on said first insulating film to be electrically connected to said signal storage regions through said contact holes, said first metallic electrodes having projections in a portion thereof; depositing a second insulating film constituted by an organic material over the entire surface of the device as formed by the preceding step to make the surface thereof substantially flat; reactive ion etching the entire surface of said second insulating film until the projections of said first metallic electrodes are exposed; forming on said second insulating film second metallic electrodes constituting pixel electrodes, said second metallic electrodes being connected to said first metallic electrodes at the exposed projections thereof; depositing a photoconductive film over the whole surface of the device as formed by the preceding step; and forming a transparent conductive layer on said photoconductive film; wherein said second insulating film forming step comprises: applying a polyimide film so as to cover the projections of said first metallic electrodes, and applying a photoresist film on said polyimide film to produce a flat surface.

Claim 2

A method of manufacturing a solid-state image pickup device having plural pixels, comprising the steps of: forming on a semiconductor substrate signal storage regions for each pixel, and signal read-out regions; depositing a first insulating film on said signal storage regions and said signal read-out regions; forming contact holes in said first insulating film; forming first metallic electrodes on said first insulating film to be electrically connected to said signal storage regions through said contact holes, said first metallic electrodes having projections in a portion thereof; depositing a second insulating film constituted by an organic material over the entire surface of the device as formed by the preceding step to make the surface thereof substantially flat; reactive ion etching the entire surface of said second insulating film until the projections of said first metallic electrodes are exposed; forming on said second insulating film second metallic electrodes constituting pixel electrodes, said second metallic electrodes being connected to said first metallic electrodes at the exposed projections thereof; depositing a photoconductive film over the whole surface of the device as formed by the preceding step; and forming a transparent conductive layer on said photoconductive film; wherein said second insulating film forming step comprises: applying a polyimide film so as to cover the projections of said first metallic electrodes, and applying a photoresist film on said polyimide film to produce a flat surface.

Claim 8

A method of manufacturing a solid-state image pickup device having plural pixels, comprising the steps of: forming on a semiconductor substrate signal storage regions for each pixel, and signal read-out regions; depositing a first insulating film on said signal storage regions and said signal read-out regions; forming electrically insulated conductive electrodes over portions of respective of said read-out regions; forming contact holes in said first insulating film; forming first metallic electrodes on said first insulating film to be electrically connected to said signal storage regions through said contact holes, said first metallic electrodes having projections in a portion thereof, said electrically insulated conductive electrodes buried under said proportions; depositing a second insulating film constituted by an organic material over the entire surface of the device as formed by the preceding step to make the surface thereof substantially flat; etching the entire surface of said second insulating film until the projections of said first metallic electrodes are exposed; forming on said second insulating film second metallic electrodes constituting pixel electrodes, said second metallic electrodes being connected to said first metallic electrodes at the exposed projections thereof; depositing a photoconductive film over the whole surface of the device as formed by the preceding step; and forming a transparent conductive layer on said photoconductive film.

Claim 9

A method of manufacturing a solid-state image pickup device having plural pixels, comprising the steps of: forming on a semiconductor substrate signal storage regions for each pixel, and signal read-out regions; depositing a first insulating film on said signal storage regions and said signal read-out regions; forming electrically insulated conductive electrodes over portions of respective of said read-out regions; forming contact holes in said first insulating film; forming first metallic electrodes on said first insulating film to be electrically connected to said signal storage regions through said contact holes, said first metallic electrodes having projections in a portion thereof, said electrically insulated conductive electrodes buried under said proportions; depositing a second insulating film constituted by an organic material over the entire surface of the device as formed by the preceding step to make the surface thereof substantially flat; etching the entire surface of said second insulating film until the projections of said first metallic electrodes are exposed; forming on said second insulating film second metallic electrodes constituting pixel electrodes, said second metallic electrodes being connected to said first metallic electrodes at the exposed projections thereof; depositing a photoconductive film over the whole surface of the device as formed by the preceding step; and forming a transparent conductive layer on said photoconductive film.

Claim 10

A method of manufacturing a solid-state image pickup device having plural pixels, comprising the steps of: forming on a semiconductor substrate signal storage regions for each pixel, and signal read-out regions; depositing a first insulating film on said signal storage regions and said signal read-out regions, including forming an oxide film on said storage regions and said signal read-out regions, forming a silicate glass layer with phosphor on said oxide film, and applying heat to melt the surface of the silicate glass layer with phosphor; forming contact holes in said first insulating film; forming first metallic electrodes on said first insulating film to be electrically connected to said signal storage regions through said contact holes, said first metallic electrodes hafing projections in a portion thereof; depositing a second insulating film constituted by an organic material over the entire surface of the device as formed by the preceding step to make the surface thereof substantially flat; etching the entire surface of said second insulating film until the projections of said first metallic electrodes are exposed; forming on said second insulating film second metallic electrodes constituting pixel electrodes, said second metallic electrodes being connected to said first metallic electrodes at the exposed projections thereof; depositing a photoconductive film over the whole surface of the device as formed by the preceding step; and forming a transparent conductive layer on said photoconductive film.

Claim 11

A method of manufacturing a solid-state image pickup device having plural pixels, comprising the steps of: forming on a semiconductor substrate signal storage regions for each pixel, and signal read-out regions; depositing a first insulating film on said signal storage regions and said signal read-out regions, including forming an oxide film on said storage regions and said signal read-out regions, forming a silicate glass layer with phosphor on said oxide film, and applying heat to melt the surface of the silicate glass layer with phosphor; forming contact holes in said first insulating film; forming first metallic electrodes on said first insulating film to be electrically connected to said signal storage regions through said contact holes, said first metallic electrodes hafing projections in a portion thereof; depositing a second insulating film constituted by an organic material over the entire surface of the device as formed by the preceding step to make the surface thereof substantially flat; etching the entire surface of said second insulating film until the projections of said first metallic electrodes are exposed; forming on said second insulating film second metallic electrodes constituting pixel electrodes, said second metallic electrodes being connected to said first metallic electrodes at the exposed projections thereof; depositing a photoconductive film over the whole surface of the device as formed by the preceding step; and forming a transparent conductive layer on said photoconductive film.