Solid state image sensor exhibiting reduced image smearing effects

Claim 2

A solid state image pickup device comprising, on a major surface of a semiconductor substrate, a plurality of photoelectric, transducers, signal readout means for reading out a signal charge stored in each of said plurality of photoelectric transducers and an impurity concentration in a first substrate region enclosing said readout means adjacent to said photoelectric transducers and which is higher than an impurity concentration in a second substrate region under said photoelectric transducers.

Claim 3

A device according to claim 1, further comprising charge discharging means formed in a region of said semiconductor substrate below said second substrate region.

Claim 4

A solid state image pickup device comprising, on a major surface of a semiconductor substrate of one conductivity type, a semiconductor layer of the other conductivity type, said semiconductor layer of the other conductivity type including a plurality of photoelectric transducers; signal readout means for reading out a signal charge stored in each of said plurality of photoelectric transducers; and an impurity concentration, in a first region of said semiconductor layer which encloses said readout means adjacent to said photoelectric transducers, higher than an impurity concentration in a second region of said semiconductor layer under the photoelectric transducers; and a reverse bias voltage is applied between said semiconductor substrate of one conductivity type and said semiconductor layer of the other conductivity type.

Claim 5

A solid state image pickup device comprising, on a major surface of a semiconductor substrate of one conductivity type, a semiconductor layer of the other conductivity type, said semiconductor layer of the other conductivity type including a plurality of photoelectric transducers; signal readout means for reading out a signal charge stored in each of said plurality of photoelectric transducers; and an impurity concentration, in a first region of said semiconductor layer which encloses said readout means adjacent to said photoelectric transducers, higher than an impurity concentration in a second region of said semiconductor layer under the photoelectric transducers; and a reverse bias voltage is applied between said semiconductor substrate of one conductivity type and said semiconductor layer of the other conductivity type.

Claim 6

A solid state image pickup device comprising a plurality of photoelectric transducers, signal readout means for reading out a signal charge stored in each of said plurality of photoelectric transducers on a major surface of a semiconductor substrate, an impurity concentration in a first substrate region which encloses said readout means adjacent to said photoelectric transducers higher than an impurity concentration in a second substrate region under said photoelectric transducers, and an overflow drain adjacent said photoelectric transducers for discharging excess charge formed in said second substrate region.

Claim 7

A solid state image pickup device comprising a plurality of photoelectric transducers, signal readout means for reading out a signal charge stored in each of said plurality of photoelectric transducers on a major surface of a semiconductor substrate, an impurity concentration in a first substrate region which encloses said readout means adjacent to said photoelectric transducers higher than an impurity concentration in a second substrate region under said photoelectric transducers, and an overflow drain adjacent said photoelectric transducers for discharging excess charge formed in said second substrate region.

Claim 8

A solid state image pickup device comprising, impurity regions formed on a major surface of a semiconductor substrate of one conductivity type, and being of the other conductivity type and which form a plurality of photoelectric transducers which produce a signal charge in response to light energy, said plurality of photoelectric transducers being aligned in a first direction on said substrate; vertical transfer regions formed on said substrate by impurity regions of the other conductivity type which transfer the signal charge converted by said plurality of photoelectric transducers in the vertical direction; horizontal transfer regions formed on said substrate for transferring the signal charge in said vertical transfer regions to an output section; gate electrodes respectively formed on said substrate between said plurality of photoelectric transducers and said vertical transfer regions; and a region of said one conductivity type having an impurity concentration which is higher than an impurity concentration of said semiconductor substrate of said one conductivity type below said plurality of photoelectric transducers and which enclose each of said vertical transfer regions.

Claim 9

A solid state image pickup device comprising, impurity regions formed on a major surface of a semiconductor substrate of one conductivity type, and being of the other conductivity type and which form a plurality of photoelectric transducers which produce a signal charge in response to light energy, said plurality of photoelectric transducers being aligned in a first direction on said substrate; vertical transfer regions formed on said substrate by impurity regions of the other conductivity type which transfer the signal charge converted by said plurality of photoelectric transducers in the vertical direction; horizontal transfer regions formed on said substrate for transferring the signal charge in said vertical transfer regions to an output section; gate electrodes respectively formed on said substrate between said plurality of photoelectric transducers and said vertical transfer regions; and a region of said one conductivity type having an impurity concentration which is higher than an impurity concentration of said semiconductor substrate of said one conductivity type below said plurality of photoelectric transducers and which enclose each of said vertical transfer regions.