EP0338766A1
Expired / Lapsed
EP
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Method of fabricating an active matrix substrate
Assignee: Panasonic Holdings Corp
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Filing: 1989-04-18
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Granted: —
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Expires: 2009-04-18
Abstract
Abstract Disclosed is a method for fabricating an active matrix substrate for forming constituent elements such as semiconductor layer, passivation layer, electrode material and other elements, by using a photo resist exposed from the substrate back side, using the gate electrode pattern made of opaque material on a transparent substrate as the mask. This method contributes to lower the cost and improve the performance of devices.
Inventors
- 👤 Yutaka Miyata
- 👤 Tetsuya Kawamura
- 👤 Hiroshi Tsutsu
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-04 22:38
CPC Classifications
G; G02; G02F; G02F1/00; G02F1/01; G02F1/13; G02F1/133; G02F1/136; G02F1/1362; G02F1/1368; H; H10; H10D; H10D30/00; H10D30/01; H10D30/021; H10D30/031; H10D30/0312; H10D30/0316; H10D30/0321; H10D86/00; H10D86/01; H10D86/021; H10D86/0231; H10D86/40; H10D86/60
Claims Analysis
Total Claims: 27
Claim 1
Independent Claim
135 words
A method for fabricating an active matrix substrate for sequentially forming, on a transparent substrate (6), a gate electrode (7) made of an opaque material for covering a specific region on the surface of the substrate (6), a first insulator layer (9) for covering the exposed area of the substrate (6) surface and the gate electrode (7), a semiconductor layer for covering a specific region on the first insulator layer (9), and a source electrode (14) and a drain electrode (13) of said semiconductor layer, comprising at least a step of coating a photo resist on the substrate with a gate electrode (7), a step of irradiating light from the back side of the substrate (6), a step of developing said photo resist, and a step of processing the element by using said photo resist.
Claim 2
Independent Claim
135 words
A method for fabricating an active matrix substrate for sequentially forming, on a transparent substrate (6), a gate electrode (7) made of an opaque material for covering a specific region on the surface of the substrate (6), a first insulator layer (9) for covering the exposed area of the substrate (6) surface and the gate electrode (7), a semiconductor layer for covering a specific region on the first insulator layer (9), and a source electrode (14) and a drain electrode (13) of said semiconductor layer, comprising at least a step of coating a photo resist on the substrate with a gate electrode (7), a step of irradiating light from the back side of the substrate (6), a step of developing said photo resist, and a step of processing the element by using said photo resist.
Claim 3
Dependent Claim
81 words
A method for fabricating an active matrix substrate according to claim 1, wherein the step for forming said semiconductor layer consists of a step of forming a semiconductor layer on the first insulator layer (9), a step of coating a positive type photo resist (20) on said semiconductor layer, a step of irradiating light from the back side of the substrate (6), a step of developing said resist (20), and a step of etching the exposed area of said semiconductor layer.
Claim 4
Dependent Claim
82 words
A method for fabricating an active matrix substrate according to claim 2, wherein a step for installing an insular conductor layer (7a) of the same material as the gate electrode (7) in part of the region corresponding to the source bus line on the surface of the transparent substrate (6) is added, when forming the gate electrode (7), so as to form said semiconductor layer in part of the region corresponding to the source bus line on the first insulator layer (9).
Claim 5
Dependent Claim
79 words
A method for fabricating an active matrix substrate according to claim 2, wherein in a step of developing the positive type photo resist (20), by opening one or more slits (22) in part of the gate electrode (7), and in a step of etching said semiconductor layer by using the above developed photo resist (20), said semiconductor layer on said gate electrode near said slits (22) formed in the above step is also etched by overexposure or over etching.
Claim 6
Dependent Claim
56 words
A method for fabricating an active matrix substrate according to claim 2, wherein the step for etching the exposed area of said semiconductor layer is followed by a step of forming a transparent conductive layer, and a step of forming source electrode (14), drain electrode (13) and pixel electrode (15) by patterning said transparent conductive layer.
Claim 7
Dependent Claim
133 words
A method for fabricating an active matrix substrate according to claim 1, wherein the step for forming said semiconductor layer consists of a step of forming a semiconductor layer on the first insulator layer (9), a step of coating a negative type photo resist (23) on said semiconductor layer, a step of irradiating light from the back side of the substrate (6), a step of developing the resist (23), a step of forming a conductor layer (24) on the exposed part of the resist (23) and said semiconductor layer, a step of removing the conductor layer (24) on the resist (23) simultaneously with the resist (23) by the liftoff method, and a step of etching the exposed part of said semiconductor layer using the conductor layer (24) on the semiconductor layer as mask.
Claim 8
Dependent Claim
90 words
A method for fabricating an active matrix substrate according to claim 6, wherein a step of installing an insular conductive layer (7a) made of a same material as the gate electrode (7) in part of the region corresponding to the source bus line on the transparent substrate (6) surface is added, when forming the gate electrode (7), so as to form a semiconductor layer and a conductor layer for covering said semiconductor layer in part of the region corresponding to the source bus line on the first insulator layer (9).
Claim 9
Dependent Claim
68 words
A method for fabricating an active matrix substrate according to claim 6, wherein the step of etching the exposed part of said semiconductor layer using the conductor layer (24) on the semiconductor layer as the mask is followed by a step of forming a transparent conductive layer, and a step of forming source electrode (14), drain electrode (13) and pixel electrode (15) by patterning said transparent conductive layer.
Claim 10
Dependent Claim
131 words
A method for fabricating an active matrix substrate according to claim 1, wherein the step for forming said semiconductor layer consists of a step of forming a semiconductor layer on the first insulator layer (a), a step of forming a metal oxide (25) on said semiconductor layer, a step of coating a positive type photo resist (20) on the metal oxide (25), a step of irradiating light from the back side of the substrate (6), a step of developing the resist (20), a step of etching the exposed part of the metal oxide (25) by using the resist (20), a step of reducing the metal oxide (25) to produce a conductive layer after removing the resist (20), and a step of sequentially forming the source electrode (14) and drain electrode (13).
Claim 11
Dependent Claim
90 words
A method for fabricating an active matrix substrate according to claim 9, a step of installing an insular conductor layer (7a) made of a same material as the gate electrode (7) in part of the region corresponding to the source bus line of the transparent substrate (6) surface is added, when forming the gate electrode (7), so as to form a semiconductor layer and a metal oxide (25) for covering this semiconductor layer in part of the region corresponding to the source bus line on the first insulator layer (9).
Claim 12
Dependent Claim
80 words
A method for fabricating an active matrix substrate according to claim 1, wherein the step of forming the source electrode (14) and drain electrode (13) is followed by a step of coating a negative type photo resist (23) on the active matrix substrate, a step of irradiating light from the back side of the substrate (6), a step of developing the resist (23), and a step of reducing the exposed part of the source electrode (14) and drain electrode (13).
Claim 13
Dependent Claim
57 words
A method for fabricating an active matrix substrate according to claim 11, wherein a step of installing an insular conductor layer (7a) made of a same material as the gate electrode (7) in part of the region corresponding to the source bus line of the transparent substrate (6) surface is added when forming the gate electrode (7).
Claim 14
Dependent Claim
104 words
A method for fabricating an active matrix substrate according to claim 1, wherein the step of forming the source electrode (14) and drain electrode (13) is followed by a step of forming a second insulator layer (19) on the active matrix substrate, a step of coating a negative type photo resist (23) on this second insulator layer (19), a step of irradiating light from the back side of the substrate (6), a step of deveoping the resist (23), a step of etching the second insulator layer (19), and a step of reducing the exposed parts of the source electrode (14) and drain electrode (13).
Claim 15
Dependent Claim
56 words
A method for fabricating an active matrix substrate according to claim 13, wherein a step of installing an insular conductor layer (7a) made of a same material as the gate electrode (7) in part of the region corresponding to the source bus line of the transparent substrate surface is added when forming the gate electrode (7).
Claim 16
Dependent Claim
39 words
A method for fabricating an active matrix substrate according to claim 11, wherein the exposed area surface of the electrodes 13 and 14 is oxidized after reducing the exposed parts of the source electrode (14) and drain electrode (13).
Claim 17
Dependent Claim
80 words
A method for fabricating an active matrix substrate according to claim 1, wherein a step of forming a third insulator layer (11) on said semiconductor layer, a step of coating a positive type photo resist (20) on the third insulator layer (11), a step of irradiated light from the back side of the substrate (6), a step of developing the resist (20), and a step of etching the exposed part of at least the third insulator layer (11) are added.
Claim 18
Dependent Claim
57 words
A method for fabricating an active matrix substrate according to claim 16, wherein a step of installing an insular conductive layer (7a) made of a same material as the gate electrode (7) in part of the region corresponding to the source bus line on the transparent substrate (6) surface is added when forming the gate electrode (7).
Claim 19
Dependent Claim
45 words
A method for fabricating an active matrix substrate according to claim 16, wherein a step of forming a transparent conductive layer, and a step of forming source electrode (14), drain electrode (13) and pixel electrode (15) by patterning the said transparent conductive layer are added.
Claim 20
Dependent Claim
63 words
A method for fabricating an active matrix substrate according to claim 16, wherein after etching the third insulator layer (11),the substrate (6) on which the photo resist (20) is coated is baked, and said semiconductor layer is etched by using the photo resist (20) which is increased in the adhered area than the area of the third insulator layer (11) being etched above.
Claim 21
Dependent Claim
27 words
A method for fabricating an active matrix substrate according to claim 19, wherein the third insulator layer (11) is etched by overetching according to isotrophic etching means.
Claim 22
Dependent Claim
22 words
A method for fabricating an active matrix substrate according to claim 19, wherein said semiconductor layer is etched by anisotropic etching means.
Claim 23
Dependent Claim
96 words
A method for fabricating an active matrix substrate according to claim 1, wherein the step for forming said semiconductor layer consists of a step of forming a semiconductor layer on the first insulator layer (9), a step of coating a positive type photo resist (20) on the semiconductor layer, a step of irradiating light from the back side of the substrate (6), a step of developing the resist (20), a step of injection dopants into said semiconductor layer in the region free from the developed photo resist (20), and a step of etching said semiconductor layer.
Claim 24
Dependent Claim
44 words
A method for fabricating an active matrix substrate according to claim 22, wherein a step of forming a transparent conductive layer, and a step of forming source electrode (14), drain electrode (13) and pixel electrode (15) by patterning said transparent conductive layer are added.
Claim 25
Dependent Claim
56 words
A method for fabricating an active matrix substrate according to claim 22, wherein the step of injecting dopants into said semiconductor layer is followed by a step of etching said semiconductor layer by using the photo resist (20) increased in the adhered area by baking the substrate (6) on which the photo resist (20) is adhered.
Claim 26
Dependent Claim
24 words
A method for fabricating an active matrix substrate according to claim 23, wherein plasma doping method is employed in the step of injecting dopants.
Claim 27
Dependent Claim
23 words
A method for fabricating an active matrix substrate according to claim 22, wherein the step of injecting dopants is followed by laser anneal.
References Cited (Backward Citations)
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