EP1134811A1
Expired / Lapsed
EP
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Transistor and semiconductor device
Assignee: Japan Science and Technology Agency
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Filing: 1999-11-11
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Granted: —
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Expires: 2019-11-11
Abstract
Abstract A transistor is provided, which is entirely and partially transparent by the use of a transparent channel layer made of zinc oxide or the like. A channel layer 11 formed of a transparent semiconductor such as zinc oxide ZnO. A transparent electrode is used for all of a source 12, a drain 13 and a gate 14, or a part of them. As the transparent electrode, a transparent conductive material such as conductive ZnO doped with, for example, group III elements is used. As a gate insulating layer 15, a transparent insulative material such as insulative ZnO doped with elements capable of taking a valence of one as a valence number or group V elements is used. If a substrate 16 must be transparent, for example, glass, sapphire, plastic or the like can be used as a transparent material.
Inventors
- 👤 Masashi Kawasaki
- 👤 Hideo Ohno
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-05 17:01
CPC Classifications
H; H10; H10D; H10D30/00; H10D30/80; H01; H01S; H01S5/00; H01S5/02; H01S5/026; H01S5/0261; H10D10/00; H10D10/311; H10D30/60; H10D30/67; H10D30/6704; H10D30/6713; H10D30/6729; H10D30/6737; H10D30/6739; H10D30/674; H10D30/6755; H10D64/00; H10D64/60; H10D64/62; H10D64/66; H10D64/68; H10D64/691; H10H; H10H29/00; H10H29/10; H10D62/00; H10D62/80; H10D62/86; H10H20/00; H10H20/80; H10H20/81; H10H20/822; H10H20/823
Claims Analysis
Total Claims: 13
Claim 1
Independent Claim
98 words
A transistor comprising: a transparent channel layer using any one of zinc oxide
ZnO, zinc magnesium oxide Mg x Zn 1-x O, zinc cadmium oxide
Cd x Zn 1-x O and cadmium oxide CdO; and a source, a drain and a gate, in which a transparent conductive
material such as conductive ZnO doped or undoped with
any one of group III elements, group VII elements, group I elements
and group V elements, a transparent conductor such as
In 2 O 3 , SnO 2 and (In-Sn)O x , or a untransparent electrode material
are used partially or entirely.
Claim 2
Dependent Claim
59 words
The transistor according to claim 1, the transistor further comprising: a gate insulating layer using a transparent insulating material
such as insulative ZnO doped with elements capable of
taking a valence of 1 as a valence number or doped with group V
element, a transparent insulating oxide, or a transparent insulator
between said transparent channel layer and said gate.
Claim 3
Dependent Claim
53 words
The transistor according to claim 1, the transistor further comprising: a gate insulating layer using a high dielectric transparent
insulating material such as Zn 1-x Li x O and Zn 1-x (Li y Mg x-y ) between
said transparent channel layer and said gate, where said gate insulating layer has a memory function.
Claim 4
Dependent Claim
27 words
The transistor according to any one of claims 1 to 3, the transistor further comprising: a transparent insulating substrate on which said transparent
channel layer is formed.
Claim 5
Dependent Claim
55 words
A semiconductor device, comprising: the transistor according to any one of claims 1 to 4; and a light emission portion formed of a region continuous to
said drain or said source of said transistor or a region of another
semiconductor connected to said drain or said source, and a
semiconductor layer jointed to said region.
Claim 6
Dependent Claim
76 words
A semiconductor device, comprising: the transistor according to any one of claims 1 to 4; and a capacitor formed by a region continuous to said drain of
said source of said transistor or a region of another semiconductor
or a conductor connected said drain and said source, said gate
insulating layer or another insulating layer on said region, and a
semiconductor layer or a conductive layer on said gate insulating
layer or said another insulating layer.
Claim 7
Dependent Claim
140 words
A transistor, comprising: an emitter and a collector, or a base made of a transparent
n-type semiconductor such as ZnO doped with group III elements
or group VII elements; a base, or an emitter and a collector made of a transparent
p-type semiconductor such as ZnO doped with group I elements or
group V elements; and a base electrode, an emitter electrode and a collector electrode,
in which a transparent conductive material such as conductive
ZnO doped or undoped with any one of group III elements,
group VII elements and group I elements, a transparent conductor
such as In 2 O 3 , SnO 2 and (In-Sn)O x , or an untransparent electrode
material are used partially or entirely, the base electrode,
the emitter electrode and the collector electrode being respectively
formed on said base, said emitter and said collector.
Claim 8
Dependent Claim
50 words
A semiconductor device, comprising: the transistor according to claim 7; and a light emission portion formed of a region continuous to
said collector or said emitter of said transistor or a region of
another semiconductor connected to said collector or said emitter,
and a semiconductor layer jointed to said region.
Claim 9
Dependent Claim
61 words
A semiconductor device, comprising: the transistor according to claim 7, and a capacitor formed of a region continuous to said collector
and said emitter of said transistor or a region of another semiconductor
or a conductor connected to said collector or said emitter,
an insulating layer on said region, and a semiconductor layer
or a conductive layer on said insulating layer.
Claim 10
Dependent Claim
64 words
A semiconductor device, wherein the transistor according to
any one of claims 1 to 4 and 7 is stacked in plural with an insulating
layer therebetween, the insulating layer using a transparent
insulating material such as insulative ZnO doped with elements
capable of taking a valence of one as a valence number or
group V elements, a transparent insulating oxide, or a transparent
insulator.
Claim 11
Dependent Claim
82 words
A semiconductor device, comprising: a plurality of the transistors according to any one of claims
1 to 4 and 7, wherein a transparent conductive material such as conductive
ZnO doped or undoped with group III elements, group VII
elements, group I elements and group V elements, a transparent
conductor such as In 2 O 3 , SnO 2 and (In-Sn)O x , or a untransparent
electrode material is used for all of wiring or a part of the wiring
between said transistors.
Claim 12
Dependent Claim
63 words
A semiconductor device, comprising: the transistor according to any one of claims 1 to 4 and 7; an inductor made of a transparent conductive material
such as conductive ZnO doped or undoped with group III elements,
group VII elements, group I elements and group V elements, or a
transparent conductor such as In 2 O 3 , SnO 2 and (In-Sn)O x .
Claim 13
Dependent Claim
40 words
A semiconductor device, wherein a plurality of the semiconductor
devices according to any one of claims 5, 6, 8 and 9 are
arranged in a matrix shape, and a capacitor or a light emission
portion is driven by each transistor.
References Cited (Backward Citations)
No citation records indexed.
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