US7282782B2 — Combined binary oxide semiconductor device

Claim 1

Independent Claim 59 words

A semiconductor device, comprising: a drain electrode; a source electrode; a channel contacting the drain electrode and the source electrode, wherein the channel includes a first binary oxide selected from SrO and CaO and a second binary oxide selected from CdO, ZnO and MgO; a gate electrode; and a gate dielectric positioned between the gate electrode and the channel.

Claim 2

Dependent Claim 59 words

A semiconductor device, comprising: a drain electrode; a source electrode; a channel contacting the drain electrode and the source electrode, wherein the channel includes a first binary oxide selected from SrO and CaO and a second binary oxide selected from CdO, ZnO and MgO; a gate electrode; and a gate dielectric positioned between the gate electrode and the channel.

Claim 3

Dependent Claim 38 words

The semiconductor device of claim 1 , wherein the channel includes an atomic composition of a first metal (A):second metal (B) ratio (A:B), wherein A and B are each in a range of about 0.05 to about 0.95.

Claim 4

Dependent Claim 25 words

The semiconductor device of claim 1 , wherein the channel includes one of an amorphous form, a single-phase crystalline form, and a mixed-phase crystalline form.

Claim 5

Dependent Claim 30 words

The semiconductor device of claim 1 , wherein at least one of the drain electrode, the source electrode, the channel, and gate electrode, and the gate dielectric are substantially transparent.

Claim 6

Dependent Claim 55 words

The semiconductor device of claim 1 , wherein the channel includes a third binary oxide from ZnO, CdO, SrO, CaO, and MgO and having an atomic composition of a first metal:second metal:third metal ratio of A:B:C, wherein A, B, and C are each different and each in a range of about 0.025 to about 0.95.

Claim 7

Dependent Claim 71 words

The semiconductor device of claim 5 , wherein the channel includes the first binary oxide, the second binary oxide, the third binary oxide, and a fourth binary oxide selected from ZnO, CdO, SrO, CaO, and MgO and having an atomic composition of a first metal:second metal:third metal:fourth metal ratio of A:B:C:D, wherein A, B, C, and D are each different and each in a range of about 0.017 to about 0.95.

Claim 8

Dependent Claim 50 words

The semiconductor device of claim 1 , wherein the channel includes the first binary oxide and the second binary oxide selected from within one of a first group of ZnO, CdO, SrO, CaO, and MgO and a second group of In 2 O 3 and Ga 2 O 3 .

Claim 9

Dependent Claim 67 words

The semiconductor device of claim 7 , wherein the channel includes the first binary oxide and the second binary oxide selected from within one of a first group of ZnO, CdO, SrO, CaO, and MgO, the second group of In 2 O 3 and Ga 2 O 3 , and a third group of SnO 2 , GeO 2 , PbO 2 , and TiO 2 .

Claim 10

Dependent Claim 75 words

The semiconductor device of claim 8 , wherein the channel includes the first binary oxide, the second binary oxide, and a third binary oxide selected from within the third group SnO 2 , GeO 2 , PbO 2 , and TiO 2 and having an atomic composition of a first metal:second metal:third metal ratio of A:B:C, wherein A, B, and C are each different and each in a range of about 0.025 to about 0.95.

Claim 11

Dependent Claim 81 words

The semiconductor device of claim 9 , wherein the channel includes the first binary oxide, the second binary oxide, the third binary oxide, and a fourth binary oxide selected from within the third group SnO 2 , GeO 2 , PbO 2 , and TiO 2 and having an atomic composition of a first metal:second metal:third metal:fourth metal ratio of A:B:C:D, wherein A, B, C, and D are each different and each in a range of about 0.017 to about 0.95.

Claim 12

Dependent Claim 68 words

A semiconductor device, comprising: a drain electrode; a source electrode; means for carrying electron flow to electrically couple the drain electrode and the source electrode, wherein the means for carrying electron flow includes a first binary oxide selected from SrO and CaO and a second binary oxide selected from CdO, ZnO and MgO; a gate electrode; and a gate dielectric positioned between the gate electrode and the channel.

Claim 13

Dependent Claim 68 words

A semiconductor device, comprising: a drain electrode; a source electrode; means for carrying electron flow to electrically couple the drain electrode and the source electrode, wherein the means for carrying electron flow includes a first binary oxide selected from SrO and CaO and a second binary oxide selected from CdO, ZnO and MgO; a gate electrode; and a gate dielectric positioned between the gate electrode and the channel.

Claim 14

Dependent Claim 44 words

The semiconductor device of claim 11 , wherein the means for carrying electron flow includes an atomic composition of a first metal(A):second metal (B) ratio (A:B), wherein A and B are each different and each in a range of about 0.05 to about 0.95.

Claim 15

Dependent Claim 25 words

The semiconductor device of claim 11 , wherein the channel includes one of an amorphous form, a single-phase crystalline form, and a mixed-phase crystalline form.

Claim 16

Dependent Claim 30 words

The semiconductor device of claim 11 , wherein at least one of the drain electrode, the source electrode, the channel, and gate electrode, and the gate dielectric are substantially transparent.

Claim 17

Dependent Claim 59 words

The semiconductor device of claim 11 , wherein the means for carrying electron flow includes a third binary oxide from ZnO, CdO, SrO, CaO, and MgO and having an atomic composition of a first metal:second metal:third metal ratio of A:B:C, wherein A, B, and C are each different and each in a range of about 0.025 to about 0.95.

Claim 18

Dependent Claim 75 words

The semiconductor device of claim 15 , wherein the means for carrying electron flow includes the first binary oxide, the second binary oxide, the third binary oxide, and a fourth binary oxide selected from ZnO, CdO, SrO, CaO, and MgO and having an atomic composition of a first metal:second metal:third metal:fourth metal ratio of A:B:C:D, wherein A, B, C, and D are each different and each in a range of about 0.017 to about 0.95.

Claim 19

Dependent Claim 54 words

The semiconductor device of claim 11 , wherein the means for carrying electron flow includes a first binary oxide and a second binary oxide selected from within one of a first group of ZnO, CdO, SrO, CaO, and MgO and a second group of In 2 O 3 and Ga 2 O 3 .

Claim 20

Dependent Claim 72 words

The semiconductor device of claim 17 , wherein the means for carrying electron flow includes a first binary oxide and a second binary oxide selected from within one of the first group of ZnO, CdO, SrO, CaO, and MgO, the second group of In 2 O 3 , and Ga 2 O 3 , and a third group of SnO 2 , GeO 2 , PbO 2 , and TiO 2 .

Claim 21

Dependent Claim 79 words

The semiconductor device of claim 18 , wherein the means for carrying electron flow includes the first binary oxide, the second binary oxide, and a third binary oxide selected from within the third group SnO 2 , GeO 2 , PbO 2 , and TiO 2 and having an atomic composition of a first metal:second metal:third metal ratio of A:B:C, wherein A, B, and C are each different and each in a range of about 0.025 to about 0.95.

Claim 22

Dependent Claim 85 words

The semiconductor device of claim 19 , wherein the means for carrying electron flow includes the first binary oxide, the second binary oxide, the third binary oxide, and a fourth binary oxide selected from within the third group SnO 2 , GeO 2 , PbO 2 , and TiO 2 and having an atomic composition of a first metal:second metal:third metal:fourth metal ratio of A:B:C:D, wherein A, B, C, and D are each different and each in a range of about 0.017 to about 0.95.

Claim 23

Dependent Claim 73 words

A semiconductor device formed by the steps, comprising: providing a drain electrode; providing a source electrode; providing a precursor composition including a first binary oxide selected from SrO and CaO and a second binary oxide selected from CdO, ZnO, and MgO; depositing a channel from the precursor composition contacting the drain electrode and the source electrode; providing a gate electrode; and providing a gate dielectric positioned between the gate electrode and the channel.

Claim 24

Dependent Claim 73 words

A semiconductor device formed by the steps, comprising: providing a drain electrode; providing a source electrode; providing a precursor composition including a first binary oxide selected from SrO and CaO and a second binary oxide selected from CdO, ZnO, and MgO; depositing a channel from the precursor composition contacting the drain electrode and the source electrode; providing a gate electrode; and providing a gate dielectric positioned between the gate electrode and the channel.

Claim 25

Dependent Claim 49 words

The semiconductor device of claim 21 , wherein providing the precursor composition includes step for providing the precursor composition having an atomic composition of a first metal(A):second metal (B) ratio (A:B), wherein A and B are each different and each in a range of about 0.05 to about 0.95.

Claim 26

Dependent Claim 35 words

The semiconductor device of claim 21 , wherein forming a channel includes: step for vaporizing the precursor composition to form vaporized precursor composition; and depositing the vaporized precursor composition using a physical vapor deposition technique.

Claim 27

Dependent Claim 60 words

The semiconductor device of claim 21 , wherein providing the precursor composition includes step for providing a third binary oxide from ZnO, CdO, SrO, CaO, and MgO and having an atomic composition of a first metal:second metal:third metal ratio of A:B:C, wherein A, B, and C are each different and each in a range of about 0.025 to about 0.95.

Claim 28

Dependent Claim 62 words

The semiconductor device of claim 24 , wherein providing the precursor composition includes step for providing a fourth binary oxide from ZnO, CdO, SrO, CaO, and MgO and having an atomic composition of a first metal:second metal:third metal:fourth metal ratio of A:B:C:D, wherein A, B, C, and D are each different and each in a range of about 0.017 to about 0.95.

Claim 29

Dependent Claim 55 words

The semiconductor device of claim 21 , wherein providing the precursor composition includes step for providing the first binary oxide and the second binary oxide selected from within one of a first group of ZnO, CdO, SrO, CaO, and MgO and a second group of In 2 O 3 and Ga 2 O 3 .

Claim 30

Dependent Claim 72 words

The semiconductor device of claim 26 , wherein providing the precursor composition includes step for providing the first binary oxide and the second binary oxide selected from within one of the first group of ZnO, CdO, SrO, CaO, and MgO, the second group of In 2 O 3 and Ga 2 O 3 , and a third group of SnO 2 , GeO 2 , PbO 2 , and TiO 2 .

Claim 31

Dependent Claim 80 words

The semiconductor device of claim 27 , wherein providing the precursor composition includes step for providing the first binary metal oxide, the second binary metal oxide, and a third binary oxide from the third group SnO 2 , GeO 2 , PbO 2 , and TiO 2 and having an atomic composition of a first metal:second metal:third metal ratio of A:B:C, wherein A, B, and C are each different and each in a range of about 0.025 to about 0.95.

Claim 32

Dependent Claim 85 words

The semiconductor device of claim 28 , wherein providing the precursor composition includes providing the first binary metal oxide, the second binary metal oxide, the third binary oxide, and a fourth binary oxide from the third group SnO 2 , GeO 2 , PbO 2 , and TiO 2 and having an atomic composition of a first metal:second metal:third metal: fourth metal ratio of A:B:C:D, wherein A, B, C and D are each different and each in a range of about 0.017 to about 0.95.

Claim 33

Dependent Claim 106 words

A display device, comprising: a plurality of display elements configured to operate collectively to display images, where each of the display elements includes a semiconductor device configured to control light emitted by the display element, the semiconductor device including: a drain electrode; a source electrode; a channel contacting the drain electrode and the source electrode, wherein the channel includes a first binary oxide selected from SrO and CaO and a second binary oxide selected from CdO, ZnO and MgO; a gate electrode; and a gate dielectric positioned between the gate electrode and the channel and configured to permit application of an electric field to the channel.

Claim 34

Dependent Claim 106 words

A display device, comprising: a plurality of display elements configured to operate collectively to display images, where each of the display elements includes a semiconductor device configured to control light emitted by the display element, the semiconductor device including: a drain electrode; a source electrode; a channel contacting the drain electrode and the source electrode, wherein the channel includes a first binary oxide selected from SrO and CaO and a second binary oxide selected from CdO, ZnO and MgO; a gate electrode; and a gate dielectric positioned between the gate electrode and the channel and configured to permit application of an electric field to the channel.

Claim 35

Dependent Claim 40 words

The display device of claim 30 , wherein the channel includes an atomic composition of a first metal(A):second metal (B) ratio (A:B), wherein A and B are each different and each in a range of about 0.05 to about 0.95.

Claim 36

Dependent Claim 55 words

The display device of claim 30 , wherein the channel includes a third binary oxide from ZnO, CdO, SrO, CaO, and MgO and having an atomic composition of a first metal:second metal:third metal ratio of A:B:C, wherein A, B, and C are each different and each in a range of about 0.025 to about 0.95.

Claim 37

Dependent Claim 57 words

The display device of claim 32 , wherein the channel includes a fourth binary oxide from ZnO, CdO, SrO, CaO, and MgO and having an atomic composition of a first metal:second metal:third metal:fourth metal ratio of A:B:C:D, wherein A, B, C, and D are each different and each in a range of about 0.017 to about 0.95.

Claim 38

Dependent Claim 50 words

The display device of claim 30 , wherein the channel includes the first binary oxide and the second binary oxide selected from within one of a first group of ZnO, CdO, SrO, CaO, and MgO and a second group of In 2 O 3 and Ga 2 O 2 .

Claim 39

Dependent Claim 67 words

The display device of claim 34 , wherein the channel includes the first binary oxide and the second binary oxide selected from within one of the first group of ZnO, CdO, SrO, CaO, and MgO, the second group of In 2 O 3 and Ga 2 O 2 , and a third group of SnO 2 , GeO 2 , PbO 2 , and TiO 2 .

Claim 40

Dependent Claim 75 words

The display device of claim 35 , wherein the channel includes the first binary oxide, the second binary oxide, and a third binary oxide selected from within the third group SnO 2 , GeO 2 , PbO 2 , and TiO 2 and having an atomic composition of a first metal:second metal:third metal ratio of A:B:C, wherein A, B, and C are each different and each in a range of about 0.025 to about 0.95.

Claim 41

Dependent Claim 81 words

The display device of claim 36 , wherein the channel includes the first binary oxide, the second binary oxide, the third binary oxide, and a fourth binary oxide selected from within the third group SnO 2 , GeO 2 , PbO 2 , and TiO 2 and having an atomic composition of a first metal:second metal:third metal:fourth metal ratio of A:B:C:D, wherein A, B, C, and D are each different and each in a range of about 0.017 to about 0.95.

Claim 42

Dependent Claim 30 words

The display device of claim 37 , wherein at least one of the drain electrode, the source electrode, the channel, and gate electrode, and the gate dielectric are substantially transparent.

Annuity Stage	Window Opens	Payment Deadline	Surcharge Period Until	Estimated Fee	Status
3.5 Years (Year 4)	2010-10-15	2011-04-16	2011-10-16	$2000.00	Window Closed / Lapsed
7.5 Years (Year 8)	2014-10-15	2015-04-16	2015-10-16	$3760.00	Window Closed / Lapsed
11.5 Years (Year 12)	2018-10-15	2019-04-16	2019-10-16	$7700.00	Window Closed / Lapsed

Combined binary oxide semiconductor device

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