US6762445B2
Expired / Lapsed
US
⏱️ 0.0 years remaining
DRAM memory cell with dummy lower electrode for connection between upper electrode and upper layer interconnect
Assignee: Panasonic Holdings Corp
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Filing: 2002-07-17
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Granted: 2004-07-13
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Expires: 2022-07-17
Abstract
Abstract In a DRAM memory cell that is a semiconductor memory device, a bit line connected to a bit line plug and local interconnect are provided on a first interlayer insulating film. A contact is not provided on a Pt film constituting an upper electrode, and a dummy lower electrode is in direct contact with a dummy barrier metal. That is, the upper electrode is connected to upper layer interconnect (Cu interconnect) by the dummy lower electrode, a dummy cell plug and the local interconnect. Since the Pt film is not exposed to a reducing atmosphere, deterioration of characteristics of a capacitive insulating film can be prevented.
Inventors
- 👤 Hisashi Ogawa
- 👤 Yoshihiro Mori
- 👤 Akihiko Tsuzumitani
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-05 11:12
CPC Classifications
H; H10; H10B; H10B12/00; H10B12/01; H10B12/02; H10B12/03; H10B12/033; H10B12/09; H10D; H10D1/00; H10D1/60; H10D1/68; H10D1/682
Claims Analysis
Total Claims: 12
Claim 1
Independent Claim
93 words
A semiconductor memory device, comprising: a memory capacitor that is provided on an insulating layer over a semiconductor substrate and includes by a lower electrode, an upper electrode and a capacitive insulating film interposed between the lower electrode and the upper electrode; an extension of the upper electrode from the upper electrode of the memory capacitor, a dummy conductor member provided such that a part of the dummy conductor member is in contact with an underside of the extension of upper electrode; and upper layer interconnect electrically connected to the dummy conductor member.
Claim 2
Dependent Claim
93 words
A semiconductor memory device, comprising: a memory capacitor that is provided on an insulating layer over a semiconductor substrate and includes by a lower electrode, an upper electrode and a capacitive insulating film interposed between the lower electrode and the upper electrode; an extension of the upper electrode from the upper electrode of the memory capacitor, a dummy conductor member provided such that a part of the dummy conductor member is in contact with an underside of the extension of upper electrode; and upper layer interconnect electrically connected to the dummy conductor member.
Claim 3
Dependent Claim
29 words
The semiconductor memory device according to claim 1 , wherein the dummy conductor member includes a dummy lower electrode formed of the same conductor film as the lower electrode.
Claim 4
Dependent Claim
26 words
The semiconductor memory device according to claim 1 , wherein the dummy conductor member further includes conductor film filling a trench provided in the insulating layer.
Claim 5
Dependent Claim
47 words
The semiconductor memory device according to claim 1 , wherein the dummy conductor member further includes local interconnect provided on the semiconductor substrate under the insulating layer; and a plug piercing through the insulating layer to electrically connect the extension of upper electrode and the local interconnect.
Claim 6
Dependent Claim
38 words
The semiconductor memory device according to claim 4 , further comprising a bit line formed below the memory capacitor across the insulating layer, wherein the local interconnect is formed of the same conductor film as the bit line.
Claim 7
Dependent Claim
29 words
The semiconductor memory device according to claim 4 , wherein at least a part of the extension of upper electrode overlaps the conductor plug when it is viewed two-dimensionally.
Claim 8
Dependent Claim
100 words
The semiconductor memory device according to claim 1 , further comprising: an isolating insulating film provided in a semiconductor substrate below the insulating layer; a memory cell transistor formed in a region of the semiconductor substrate, the memory cell transistor including a gate electrode and doped layers defined within the semiconductor substrate below the gate electrode to horizontally sandwich the gate electrode there between; local interconnect that is provided on the isolating insulating film and is formed of the same conductor film as the gate electrode; and a conductor plug piercing through the insulating layer to connect the local interconnect.
Claim 9
Dependent Claim
83 words
The semiconductor memory device according to claim 1 , further comprising: a memory cell transistor that is provided on the semiconductor substrate and has a gate electrode and doped layers defined within the semiconductor substrate below the gate electrode to horizontally sandwich the gate electrode there between; local interconnect formed of another doped layer that is provided spaced apart from the doped layers on the semiconductor substrate; and a conductor plug piercing through the insulating layer to be connected to the local interconnect.
Claim 10
Dependent Claim
22 words
The semiconductor memory device according to claim 2 , wherein the upper layer interconnect is in contact with the dummy lower electrode.
Claim 11
Dependent Claim
26 words
The semiconductor memory device according to claim 1 , wherein the memory capacitor has a clyndrical lower electrode, a capacitive insulating film and an upper electrode.
Claim 12
Dependent Claim
22 words
The semiconductor memory device according to claim 1 , wherein the capacitive insulating film is a high-κ film or a ferroelectric film.
References Cited (Backward Citations)
US20030052350A1
Cited
US20030015742A1
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2007-07-13 | 2008-01-12 | 2008-07-13 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2011-07-13 | 2012-01-12 | 2012-07-13 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2015-07-13 | 2016-01-12 | 2016-07-13 | $7700.00 | Window Closed / Lapsed |