US7297977B2
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Semiconductor device
Assignee: Hewlett Packard Development Co LP
•
Filing: 2004-03-12
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Granted: 2007-11-20
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Expires: 2024-03-12
Abstract
Abstract One exemplary embodiment includes a semiconductor device. The semiconductor device comprising a channel including one or more of a metal oxide including zinc-gallium, cadmium-gallium, cadmium-indium.
Inventors
- 👤 Randy L. Hoffman
- 👤 Gregory S. Herman
- 👤 Peter P. Mardilovich
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-06 01:24
CPC Classifications
H; H10; H10D; H10D30/00; H10D30/60; H10D30/67; H10D30/674; H10D30/6755; H10D30/6729; H10D30/673; H10D30/6733; H10D30/6734; Y; Y10; Y10T; Y10T408/00; Y10T408/55; Y10T408/563; Y10T408/5633
Claims Analysis
Total Claims: 37
Claim 1
Independent Claim
65 words
A semiconductor device, comprising: a drain electrode; a source electrode; a channel contacting the drain electrode and the source electrode, wherein the channel includes one or more metal oxides that include zinc-gallium, cadmium-gallium, and cadmium-indium, and wherein at least one metal oxide of the channel is of an amorphous form; a gate electrode; and a gate dielectric positioned between the gate electrode and the channel.
Claim 2
Dependent Claim
65 words
A semiconductor device, comprising: a drain electrode; a source electrode; a channel contacting the drain electrode and the source electrode, wherein the channel includes one or more metal oxides that include zinc-gallium, cadmium-gallium, and cadmium-indium, and wherein at least one metal oxide of the channel is of an amorphous form; a gate electrode; and a gate dielectric positioned between the gate electrode and the channel.
Claim 3
Dependent Claim
36 words
The semiconductor device of claim 1 , wherein the metal oxide includes an atomic composition of metal (A)-to-metal (B) ratio (A:B), wherein A and B are each in a range of about 0.05 to about 0.95.
Claim 4
Dependent Claim
25 words
The semiconductor device of claim 1 , wherein the metal oxides include at least one of a single-phase crystalline form, and a mixed-phase crystalline form.
Claim 5
Dependent Claim
22 words
The semiconductor device of claim 1 , wherein the metal oxide includes one or more of zinc-gallium oxide, cadmium-gallium oxide, cadmium-indium oxide.
Claim 6
Dependent Claim
34 words
The semiconductor device of claim 4 , where the metal oxide includes an atomic composition of metal(A)-to-metal(B) ratio (A:B), wherein A and B are each in a range of about 0.05 to about 0.95.
Claim 7
Dependent Claim
82 words
The semiconductor device of claim 1 , wherein the channel includes one or more compounds of the formula A x B x C x O x , wherein each A is selected from the group of Zn, Cd, each B is selected from the group of Ga, In, each C is selected from the group of Zn, Cd, Ga, In, each O is atomic oxygen, each x is independently a non-zero integer, and wherein each of A, B, and C are different.
Claim 8
Dependent Claim
47 words
The semiconductor device of claim 6 , wherein the one or more compounds of the formula A x B x C x O x includes an atomic composition of ratio A:B:C, wherein A, B, and C are each in a range of about 0.025 to about 0.95.
Claim 9
Dependent Claim
24 words
The semiconductor device of claim 1 , wherein the metal oxide includes one or more of zinc-gallium-indium oxide, cadmium-gallium-indium oxide, zinc-cadmium-gallium oxide, zinc-cadmium-indium oxide.
Claim 10
Dependent Claim
34 words
The semiconductor device of claim 8 , wherein the metal oxide includes an atomic composition of ration A:B:C, wherein A, B, and C are each in a range of about 0.025 to about 0.95.
Claim 11
Dependent Claim
81 words
The semiconductor device of claim 6 , wherein the one or more compounds of formula A x B x C x O x , includes D x , to form a compound of the formula A x B x C x D x O x , wherein D is selected from the group of Zn, Cd, Ga, In, each O is atomic oxygen, each x is independently a non-zero integer, and wherein each of A, B, C, and D are different.
Claim 12
Dependent Claim
50 words
The semiconductor device of claim 10 , wherein the one or more compounds of the formula A x B x C x D x O x includes an atomic composition of ratio A:B:C:D, wherein A, B, C, and D are each in a range of about 0.017 to about 0.95.
Claim 13
Dependent Claim
19 words
The semiconductor device of claim 1 , wherein the metal oxide includes one or more of including zinc-cadmium-gallium-indium oxide.
Claim 14
Dependent Claim
35 words
The semiconductor device of claim 12 , wherein the metal oxide includes an atomic composition of ratio A:B:C:D, wherein A, B, C, and D are each in a range of about 0.017 to about 0.95.
Claim 15
Dependent Claim
157 words
A semiconductor device, comprising: a drain electrode; a source electrode; means for controlling current flow electrically coupled to the drain electrode and the source electrode, wherein the means for controlling current flow is comprised at least partially of a channel in amorphous form; a gate electrode separated from the channel by a gate dielectric; and wherein the channel includes one or more compounds selected from the group of formulas including A X B X O X , A X B X C X O X , and A X B X C X D X O X , and wherein each A is selected from the group of Zn, Cd, each B is selected from the group of Ga, In, each C and D is selected from the group of Zn, Cd, Ga, In, each 0 is atomic oxygen, each x is independently a non-zero integer, and wherein each of A, B, C, and D are different.
Claim 16
Dependent Claim
157 words
A semiconductor device, comprising: a drain electrode; a source electrode; means for controlling current flow electrically coupled to the drain electrode and the source electrode, wherein the means for controlling current flow is comprised at least partially of a channel in amorphous form; a gate electrode separated from the channel by a gate dielectric; and wherein the channel includes one or more compounds selected from the group of formulas including A X B X O X , A X B X C X O X , and A X B X C X D X O X , and wherein each A is selected from the group of Zn, Cd, each B is selected from the group of Ga, In, each C and D is selected from the group of Zn, Cd, Ga, In, each 0 is atomic oxygen, each x is independently a non-zero integer, and wherein each of A, B, C, and D are different.
Claim 17
Dependent Claim
37 words
The semiconductor device of claim 14 , wherein the means for controlling current flow includes forming the channel using metal oxides at least one of an amorphous form, a single-phase crystalline form, and a mixed-phase crystalline form.
Claim 18
Dependent Claim
19 words
The semiconductor device of claim 14 , wherein the source, drain, and gate electrodes include a substantially transparent material.
Claim 19
Dependent Claim
97 words
A semiconductor device formed by steps, comprising: providing a drain electrode; providing a source electrode; providing a precursor composition consisting of one or more precursor compounds selected from the group consisting of: zinc oxide, cadmium oxide, gallium oxide, indium oxide, zinc-gallium oxide, cadmium-gallium oxide, and cadmium-indium oxide; depositing a channel including the precursor composition to form a multicomponent oxide from the precursor composition contacting the drain electrode and the source electrode, wherein the multicomponent oxide is of an amorphous form; providing a gate electrode; and providing a gate dielectric positioned between the gate electrode and the channel.
Claim 20
Dependent Claim
97 words
A semiconductor device formed by steps, comprising: providing a drain electrode; providing a source electrode; providing a precursor composition consisting of one or more precursor compounds selected from the group consisting of: zinc oxide, cadmium oxide, gallium oxide, indium oxide, zinc-gallium oxide, cadmium-gallium oxide, and cadmium-indium oxide; depositing a channel including the precursor composition to form a multicomponent oxide from the precursor composition contacting the drain electrode and the source electrode, wherein the multicomponent oxide is of an amorphous form; providing a gate electrode; and providing a gate dielectric positioned between the gate electrode and the channel.
Claim 21
Dependent Claim
19 words
The semiconductor device of claim 17 , wherein the step for depositing a channel includes an ink-jet deposition technique.
Claim 22
Dependent Claim
91 words
The semiconductor device of claim 17 , wherein the precursor composition includes one or more precursor compounds that include A x , one or more precursor compounds that include B x , one or more precursor compounds that include C x , wherein each A is selected from the group of Zn, Cd, each B is selected from the group Ga, In, each C is selected from the group of Zn, Cd, Ga, In, each x is independently a non-zero integer, and wherein each of A, B, and C are different.
Claim 23
Dependent Claim
55 words
The semiconductor device of claim 19 , wherein the one or more precursor compounds includes one or more precursor compounds that include D x , wherein D is selected from the group of Zn, Cd, Ga, In, each x is independently a non-zero integer, and wherein each of A, B, C, and D are different.
Claim 24
Dependent Claim
49 words
The semiconductor device of claim 20 , wherein depositing the channel includes vaporizing the precursor composition to form a vaporized precursor composition, and depositing the vaporized precursor composition using a physical vapor deposition technique including one or more of dc reactive sputtering, rf sputtering, magnetron sputtering, ion beam sputtering.
Claim 25
Independent Claim
143 words
A method for operating a semiconductor device, comprising: providing a semiconductor device that includes a source electrode, a drain electrode, and a channel to electrically couple the source electrode and the drain electrode, a gate electrode separated from the channel by a gate dielectric, wherein the channel includes a multicomponent oxide including at least one metal cation from group 12, and at least one metal cation from group 13, wherein group 12 cations includes Zn and Cd, and group 13 cations includes Ga and In, to form at least one of a three-component oxide, a four-component oxide, and a two-component oxide that includes zinc-gallium oxide, cadmium-gallium oxide, cadmium-indium oxide, wherein at least one of the two-, three-, and four-component oxides is formed of an amorphous form; and applying a voltage to the gate electrode to effect a flow of electrons through the channel.
Claim 26
Independent Claim
143 words
A method for operating a semiconductor device, comprising: providing a semiconductor device that includes a source electrode, a drain electrode, and a channel to electrically couple the source electrode and the drain electrode, a gate electrode separated from the channel by a gate dielectric, wherein the channel includes a multicomponent oxide including at least one metal cation from group 12, and at least one metal cation from group 13, wherein group 12 cations includes Zn and Cd, and group 13 cations includes Ga and In, to form at least one of a three-component oxide, a four-component oxide, and a two-component oxide that includes zinc-gallium oxide, cadmium-gallium oxide, cadmium-indium oxide, wherein at least one of the two-, three-, and four-component oxides is formed of an amorphous form; and applying a voltage to the gate electrode to effect a flow of electrons through the channel.
Claim 27
Dependent Claim
23 words
The method of claim 22 , wherein operating the semiconductor device includes using the semiconductor device as a switch in a display device.
Claim 28
Dependent Claim
23 words
The method of claim 22 , wherein operating the semiconductor device includes conducting electrons through the channel in a region of linear conductivity.
Claim 29
Dependent Claim
112 words
A display device, comprising: a plurality of pixel devices configured to operate collectively to display images, where each of the pixel devices includes a semiconductor device configured to control light emitted by the pixel device, the semiconductor device including: a drain electrode; a source electrode; a channel contacting the drain electrode and the source electrode, wherein the channel includes one or more metal oxides that include zinc-gallium, cadmium-gallium, and cadmium-indium, and wherein at least one metal oxide of the channel is of an amorphous form; a gate electrode; and a gate dielectric positioned between the gate electrode and the channel and configured to permit application of an electric field to the channel.
Claim 30
Dependent Claim
112 words
A display device, comprising: a plurality of pixel devices configured to operate collectively to display images, where each of the pixel devices includes a semiconductor device configured to control light emitted by the pixel device, the semiconductor device including: a drain electrode; a source electrode; a channel contacting the drain electrode and the source electrode, wherein the channel includes one or more metal oxides that include zinc-gallium, cadmium-gallium, and cadmium-indium, and wherein at least one metal oxide of the channel is of an amorphous form; a gate electrode; and a gate dielectric positioned between the gate electrode and the channel and configured to permit application of an electric field to the channel.
Claim 31
Dependent Claim
20 words
The display of claim 25 , wherein the source, the drain, and the gate electrodes include a substantially transparent material.
Claim 32
Dependent Claim
33 words
The display of claim 25 , wherein the metal oxide includes an atomic composition of metal(A)-to-metal(B) ratio (A:B), wherein A and B are each in a range of about 0.05 to about 0.95.
Claim 33
Dependent Claim
81 words
The display of claim 25 , wherein the channel includes one or more compounds of the formula A X B X C X O X , wherein each A is selected from the group of Zn, Cd, each B is selected from the group of Ga, In, each C is selected from the group of Zn, Cd, Ga, In, each O is atomic oxygen, each x is independently a non-zero integer, and wherein each of A, B, and C are different.
Claim 34
Dependent Claim
44 words
The display of claim 28 , wherein the one or more compounds of the formula A X B X C X O X includes a ratio of A:B:C, wherein A, B, and C, are each in a range of about 0.025 to about 0.95.
Claim 35
Dependent Claim
80 words
The display of claim 28 , wherein the one or more compounds of formula A X B X C X O X , includes D X , to form a compound of the formula A X B X C X D X O X , wherein D is selected from the group of Zn, Cd, Ga, In, each O is atomic oxygen, each x is independently a non-zero integer, and wherein each of A, B, C, and D are different.
Claim 36
Dependent Claim
47 words
The display of claim 30 , wherein the one or more compounds of the formula A X B X C X D X O X includes a ratio of A:B:C:D, wherein A, B, C, and D, are each in a range of about 0.017 to about 0.95.
Claim 37
Dependent Claim
27 words
The display of claim 25 , wherein the one or more metal oxides include at least one of a single-phase crystalline form, and a mixed-phase crystalline form.
References Cited (Backward Citations)
US3294660A
Cited
US5289016A
Cited
US5744864A
Cited
WO1997006544A1
Cited
US6362499B1
Cited
EP1134811A1
Cited
US6727522B1
Cited
US6391462B1
Cited
US20040023432A1
Cited
US20020171085A1
Cited
US20030047785A1
Cited
JP2003086808A
Cited
US20030111663A1
Cited
US20030218221A1
Cited
US20030218222A1
Cited
US20040127038A1
Cited
US20050017244A1
Cited
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