Patent US8587983B2 successfully refreshed from Google Patents.
US8587983B2
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US
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Resistance random access memory structure for enhanced retention
Assignee: Macronix International Co Ltd
•
Filing: 2011-10-25
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Granted: 2013-11-19
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Expires: 2031-10-25
Abstract
Abstract A bistable resistance random access memory is described for enhancing the data retention in a resistance random access memory member. A dielectric member, e.g. the bottom dielectric member, underlies the resistance random access memory member which improves the SET/RESET window in the retention of information. The deposition of the bottom dielectric member is carried out by a plasma-enhanced chemical vapor deposition or by high-density-plasma chemical vapor deposition. One suitable material for constructing the bottom dielectric member is a silicon oxide. The bistable resistance random access memory includes a bottom dielectric member disposed between a resistance random access member and a bottom electrode or bottom contact plug. Additional layers including a bit line, a top contact plug, and a top electrode disposed over the top surface of the resistance random access memory member. Sides of the top electrode and the resistance random access memory member are substantially aligned with each other.
Inventors
- 👤 ChiaHua Ho
- 👤 Erh-Kun Lai
- 👤 Kuang Yeu Hsieh
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 10:25
CPC Classifications
H; H10; H10N; H10N70/00; H10N70/011; H10N70/021; H10N70/026; H10N70/20; H10N70/231; H10N70/801; H10N70/821; H10N70/826; H10N70/881; H10N70/882; H10N70/8828; H10N70/883; H10N70/8833
Claims Analysis
Total Claims: 24
Claim 1
Independent Claim
108 words
A memory structure, comprising: a first electrode and a conductive member; a resistance memory member in contact with the first electrode; a bottom dielectric member located between the resistance memory member and the conductive member so that current flow between the resistance memory member and the conductive member is through the bottom dielectric member; and the bottom dielectric member having a dimension d 1 , the resistance memory member having a dimension d 2 , dimension d 1 being larger than dimension d 2 , dimensions d 1 and d 2 being measured parallel to a line extending between the resistance memory member and the bottom dielectric member.
Claim 2
Dependent Claim
108 words
A memory structure, comprising: a first electrode and a conductive member; a resistance memory member in contact with the first electrode; a bottom dielectric member located between the resistance memory member and the conductive member so that current flow between the resistance memory member and the conductive member is through the bottom dielectric member; and the bottom dielectric member having a dimension d 1 , the resistance memory member having a dimension d 2 , dimension d 1 being larger than dimension d 2 , dimensions d 1 and d 2 being measured parallel to a line extending between the resistance memory member and the bottom dielectric member.
Claim 3
Dependent Claim
17 words
The memory structure of claim 1 , wherein the bottom dielectric member is a substantially planar structure.
Claim 4
Dependent Claim
17 words
The memory structure of claim 1 , wherein the resistance memory member is a substantially planar structure.
Claim 5
Dependent Claim
17 words
The memory structure of claim 1 , wherein the resistance memory member directly contacts the first electrode.
Claim 6
Dependent Claim
18 words
The memory structure of claim 1 , wherein the resistance memory member directly contacts the bottom dielectric member.
Claim 7
Dependent Claim
33 words
The memory structure of claim 1 , wherein the resistance memory member directly contacts both the first electrode and the bottom dielectric member, and the bottom dielectric member directly contacts the conductive member.
Claim 8
Dependent Claim
22 words
The memory structure of claim 1 , further comprising a top dielectric member between the resistance memory member and the first electrode.
Claim 9
Dependent Claim
15 words
The memory structure of claim 1 , wherein the conductive member comprises a contact plug.
Claim 10
Dependent Claim
21 words
The memory structure of claim 1 , wherein the bottom dielectric member has a thickness of about 10 nm or less.
Claim 11
Dependent Claim
56 words
The memory structure of claim 1 , wherein the resistance memory member comprises one of the following two-element compounds: Ni x O y , Ti x O y , Al x O y , W x O y , Zn x O y , Zr x O y , Cu x O y , where x:y=0.5:0.5.
Claim 12
Dependent Claim
119 words
A memory structure, comprising: a first electrode and a conductive member; a resistance memory member disposed between the first electrode and the conductive member; a bottom dielectric member located between the resistance memory member and the conductive member; the bottom dielectric member having a dimension d 1 , the resistance memory member having a dimension d 2 , dimension d 1 being larger than dimension d 2 , dimensions d 1 and d 2 being measured parallel to a line extending between the resistance memory member and the bottom dielectric member; and the resistance memory member comprising a two-element compound with a composition of Me x O y , wherein Me is a metal and x: 0˜1; y: 0˜1.
Claim 13
Dependent Claim
119 words
A memory structure, comprising: a first electrode and a conductive member; a resistance memory member disposed between the first electrode and the conductive member; a bottom dielectric member located between the resistance memory member and the conductive member; the bottom dielectric member having a dimension d 1 , the resistance memory member having a dimension d 2 , dimension d 1 being larger than dimension d 2 , dimensions d 1 and d 2 being measured parallel to a line extending between the resistance memory member and the bottom dielectric member; and the resistance memory member comprising a two-element compound with a composition of Me x O y , wherein Me is a metal and x: 0˜1; y: 0˜1.
Claim 14
Dependent Claim
20 words
The memory structure of claim 1 , wherein the resistance memory member comprises a metal-doped metal-oxide including Al:ZnO and Al:ZrO.
Claim 15
Dependent Claim
79 words
A memory structure, comprising: a first electrode and a conductive member; a resistance memory member in contact with the first electrode; a bottom dielectric member located between the resistance memory member and the conductive member so that current flow between the resistance memory member and the conductive member is through the bottom dielectric member; and the bottom dielectric member having a top surface, wherein an area of the top surface is not in contact with the resistance memory member.
Claim 16
Dependent Claim
79 words
A memory structure, comprising: a first electrode and a conductive member; a resistance memory member in contact with the first electrode; a bottom dielectric member located between the resistance memory member and the conductive member so that current flow between the resistance memory member and the conductive member is through the bottom dielectric member; and the bottom dielectric member having a top surface, wherein an area of the top surface is not in contact with the resistance memory member.
Claim 17
Dependent Claim
31 words
The memory structure of claim 13 , wherein the top surface of the bottom dielectric member has first and second of said areas not in contact with the resistance memory member.
Claim 18
Dependent Claim
31 words
The memory structure of claim 13 , wherein: the bottom dielectric member has a bottom surface; and an area of the bottom surface is not in contact with the conductive member.
Claim 19
Dependent Claim
21 words
The memory structure of claim 13 , wherein the bottom dielectric member and the resistance memory member are substantially planar structures.
Claim 20
Dependent Claim
22 words
The memory structure of claim 13 , wherein the resistance memory member directly contacts the first electrode and the bottom dielectric member.
Claim 21
Dependent Claim
21 words
The memory structure of claim 13 , wherein the bottom dielectric member has a thickness of about 10 nm or less.
Claim 22
Dependent Claim
56 words
The memory structure of claim 13 , wherein the resistance memory member comprises one of the following two-element compounds: Ni x O y , Ti x O y , Al x O y , W x O y , Zn x O y , Zr x O y , Cu x O y , where x:y=0.5:0.5.
Claim 23
Dependent Claim
119 words
A memory structure, comprising: a first electrode and a conductive member; a resistance memory member disposed between the first electrode and the conductive member; a bottom dielectric member located between the resistance memory member and the conductive member; the bottom dielectric member having a dimension d 1 , the resistance memory member having a dimension d 2 , dimension d 1 being larger than dimension d 2 , dimensions d 1 and d 2 being measured parallel to a line extending between the resistance memory member and the bottom dielectric member; and the resistance memory member comprising a two-element compound with a composition of Me x O y , wherein Me is a metal and x: 0˜1; y: 0˜1.
Claim 24
Dependent Claim
119 words
A memory structure, comprising: a first electrode and a conductive member; a resistance memory member disposed between the first electrode and the conductive member; a bottom dielectric member located between the resistance memory member and the conductive member; the bottom dielectric member having a dimension d 1 , the resistance memory member having a dimension d 2 , dimension d 1 being larger than dimension d 2 , dimensions d 1 and d 2 being measured parallel to a line extending between the resistance memory member and the bottom dielectric member; and the resistance memory member comprising a two-element compound with a composition of Me x O y , wherein Me is a metal and x: 0˜1; y: 0˜1.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2016-11-18 | 2017-05-20 | 2017-11-19 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2020-11-18 | 2021-05-20 | 2021-11-19 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2024-11-18 | 2025-05-20 | 2025-11-19 | $7700.00 | Window Closed / Lapsed |