US6861267B2
Expired / Lapsed
US
⏱️ 0.0 years remaining
Reducing shunts in memories with phase-change material
Assignee: Micron Technology Inc
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Filing: 2001-09-17
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Granted: 2005-03-01
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Expires: 2021-09-17
Abstract
Abstract A memory cell may include a phase-change material. Adhesion between the phase-change material and a dielectric or other substrate may be enhanced by using an adhesion enhancing interfacial layer. Conduction past the phase-change material through the interfacial layer may be reduced by providing a discontinuity or other feature that reduces or prevents conduction along said interfacial layer.
Inventors
- 👤 Daniel Xu
- 👤 Chien Chiang
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 10:26
CPC Classifications
H; H10; H10N; H10N70/00; H10N70/20; H10N70/231; H10N70/011; H10N70/061; H10N70/066; H10N70/801; H10N70/821; H10N70/826; H10N70/881; H10N70/882; H10N70/8828
Claims Analysis
Total Claims: 20
Claim 1
Independent Claim
38 words
A method comprising: forming a passage through a dielectric layer; covering said passage with an adhesion promoting material; creating an electrical discontinuity in said adhesion promoting material along said passage; and forming a phase-change material in said passage.
Claim 2
Independent Claim
38 words
A method comprising: forming a passage through a dielectric layer; covering said passage with an adhesion promoting material; creating an electrical discontinuity in said adhesion promoting material along said passage; and forming a phase-change material in said passage.
Claim 3
Dependent Claim
26 words
The method of claim 1 including forming a dielectric layer over a contact layer and forming said passage through said dielectric layer to said contact layer.
Claim 4
Dependent Claim
17 words
The method of claim 2 including covering said passage with an adhesion promoting material that is conductive.
Claim 5
Dependent Claim
19 words
The method of claim 1 wherein creating an electrical discontinuity includes forming an opening in said adhesion promoting material.
Claim 6
Dependent Claim
26 words
The method of claim 4 wherein forming a passage includes forming a dielectric having at least two discrete layers and forming the passage through said layers.
Claim 7
Dependent Claim
29 words
The method of claim 5 including forming a substantially vertically extending passage through said layers and then forming a lateral extension in said passage into one of said layers.
Claim 8
Dependent Claim
18 words
The method of claim 6 including forming said lateral extension by selectively isotropically etching one of said layers.
Claim 9
Dependent Claim
20 words
The method of claim 7 wherein forming a passage includes forming a dielectric with three layers including a middle layer.
Claim 10
Dependent Claim
16 words
The method of claim 8 including selectively isotropically etching the middle layer of said three layers.
Claim 11
Independent Claim
34 words
A method comprising: forming a passage through a dielectric layer; covering said passage with a conductive material; preventing conduction along said passage via said conductive material; and forming a phase-change material in said passage.
Claim 12
Independent Claim
34 words
A method comprising: forming a passage through a dielectric layer; covering said passage with a conductive material; preventing conduction along said passage via said conductive material; and forming a phase-change material in said passage.
Claim 13
Dependent Claim
26 words
The method of claim 10 including forming a dielectric layer over a contact layer and forming said passage through said dielectric layer to said contact layer.
Claim 14
Dependent Claim
24 words
The method of claim 11 including covering said passage with a conductive material that promotes adhesion between said phase-change material and said dielectric layer.
Claim 15
Dependent Claim
27 words
The method of claim 10 wherein preventing conduction along said passage via said conductive material includes creating an electrical discontinuity in said conductive material along said passage.
Claim 16
Dependent Claim
26 words
The method of claim 13 wherein forming a passage includes forming a dielectric having at least two discrete layers and forming said passage through said layers.
Claim 17
Dependent Claim
29 words
The method of claim 14 including forming a substantially vertically extending passage through said layers and then forming a lateral extension in said passage in one of said layers.
Claim 18
Dependent Claim
18 words
The method of claim 15 including forming said lateral extension by selectively isotropically etching one of said layers.
Claim 19
Dependent Claim
20 words
The method of claim 16 wherein forming said passage includes forming a dielectric with three layers including a middle layer.
Claim 20
Dependent Claim
16 words
The method of claim 17 including selectively isotropically etching the middle layer of said three layers.
References Cited (Backward Citations)
US6545287B2
Cited
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