US6545287B2
Expired / Lapsed
US
⏱️ 0.0 years remaining
Using selective deposition to form phase-change memory cells
Assignee: Intel Corp
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Filing: 2001-09-07
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Granted: 2003-04-08
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Expires: 2021-09-07
Abstract
Abstract A phase-change memory cell may be formed by selectively depositing the lower electrode in the phase-change memory pore. Thereafter, an adhesion-promoting material may be selectively deposited on the selectively deposited lower electrode and the upper surface surrounding the pore. Through the use of selective deposition techniques, the adhesion-promoting material can be positioned where needed and the lower electrode may be defined in a fashion that may reduce shunting current, reduce device current requirements, and increase dynamic range in some embodiments.
Inventors
- 👤 Chien Chiang
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 11:17
CPC Classifications
H; H10; H10N; H10N70/00; H10N70/20; H10N70/231; H10N70/011; H10N70/801; H10N70/821; H10N70/826; H10N70/841; H10N70/8413; H10N70/881; H10N70/882; H10N70/8828; Y; Y10; Y10S; Y10S438/00; Y10S438/90
Claims Analysis
Total Claims: 17
Claim 1
Independent Claim
29 words
A phase-change memory comprising: a substrate; an insulating layer over said substrate; a passage formed through said insulating layer; and a selectively deposited lower electrode formed in said passage.
Claim 2
Dependent Claim
29 words
A phase-change memory comprising: a substrate; an insulating layer over said substrate; a passage formed through said insulating layer; and a selectively deposited lower electrode formed in said passage.
Claim 3
Dependent Claim
13 words
The memory of claim 1 including a silicon layer over said insulating layer.
Claim 4
Dependent Claim
13 words
The memory of claim 2 including an adhesion-promoting layer over said silicon layer.
Claim 5
Dependent Claim
11 words
The memory of claim 3 including a selectively deposited adhesion-promoting layer.
Claim 6
Dependent Claim
23 words
The memory of claim 1 including a sidewall spacer formed on said passage, said lower electrode being selectively deposited within said sidewall spacer.
Claim 7
Dependent Claim
15 words
The memory of claim 5 including an adhesion-promoting layer on said selectively deposited lower electrode.
Claim 8
Dependent Claim
19 words
The memory of claim 6 wherein said adhesion-promoting layer on said lower electrode is a selectively deposited adhesion-promoting layer.
Claim 9
Dependent Claim
14 words
The memory of claim 7 including a phase-change material deposited over said lower electrode.
Claim 10
Dependent Claim
19 words
The memory of claim 8 wherein said adhesion-promoting material promotes adhesion between said silicon layer and said phase-change material.
Claim 11
Dependent Claim
12 words
The memory of claim 9 wherein said adhesion-promoting material is a conductor.
Claim 12
Dependent Claim
25 words
A phase-change memory comprising: a substrate; an insulating layer over said substrate; a passage formed through said insulating layer; and a selectively deposited adhesion-promoting layer.
Claim 13
Dependent Claim
25 words
A phase-change memory comprising: a substrate; an insulating layer over said substrate; a passage formed through said insulating layer; and a selectively deposited adhesion-promoting layer.
Claim 14
Dependent Claim
20 words
The memory of claim 11 including a silicon layer over said insulating layer, said adhesion-promoting layer over said silicon layer.
Claim 15
Dependent Claim
15 words
The memory of claim 11 including a selectively deposited lower electrode formed in said passage.
Claim 16
Dependent Claim
16 words
The memory of claim 13 wherein said adhesion-promoting layer is selectively deposited on said lower electrode.
Claim 17
Dependent Claim
17 words
The memory of claim 14 wherein said adhesion-promoting layer on said lower electrode is a conductive material.
References Cited (Backward Citations)
US5536947A
Cited
US6111264A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2006-04-07 | 2006-10-07 | 2007-04-08 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2010-04-07 | 2010-10-07 | 2011-04-08 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2014-04-07 | 2014-10-07 | 2015-04-08 | $7700.00 | Window Closed / Lapsed |