US5869843A
Expired / Lapsed
US
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Memory array having a multi-state element and method for forming such array or cells thereof
Assignee: Round Rock Research LLC
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Filing: 1995-06-07
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Granted: 1999-02-09
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Expires: 2015-06-07
Abstract
Abstract A memory device having a plurality of memory arrays. Each array has a plurality of memory cells, each memory cell including an electrode defining a respective contact area. Each memory array is formed by depositing a continuous chalcogenide layer. This chalcogenide layer, even when continuous, will have active areas formed above the electrodes, and a conductive layer electrically coupling at least a portion of the active areas. The memory array can also include a dielectric volume surrounding at least a portion of the plurality of electrodes. The electrodes can be contacts, plugs or pillars deposited in etched openings in the dielectric volume.
Inventors
- 👤 Steven T. Harshfield
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 10:39
CPC Classifications
H; H10; H10B; H10B63/00; H10B63/10
Claims Analysis
Total Claims: 24
Claim 1
Independent Claim
104 words
A memory array having a plurality of memory cells, at least a portion of said memory array comprising: a substrate; a dielectric layer disposed on said substrate; a plurality of individual conductive members being formed in said dielectric layer and being coupled to said substrate, said plurality of individual conductive members being arranged in rows; a plurality of strips of multi-state material, one respective strip of multi-state material disposed on each of the respective rows of said plurality of individual conductive members; and a plurality of strips of conductive material, one respective strip of conductive material disposed on each respective strip of multi-state material.
Claim 2
Dependent Claim
104 words
A memory array having a plurality of memory cells, at least a portion of said memory array comprising: a substrate; a dielectric layer disposed on said substrate; a plurality of individual conductive members being formed in said dielectric layer and being coupled to said substrate, said plurality of individual conductive members being arranged in rows; a plurality of strips of multi-state material, one respective strip of multi-state material disposed on each of the respective rows of said plurality of individual conductive members; and a plurality of strips of conductive material, one respective strip of conductive material disposed on each respective strip of multi-state material.
Claim 3
Dependent Claim
38 words
The memory array, as set forth in claim 1, wherein said substrate comprises a plurality of access devices, each of said plurality of access devices being coupled to a respective one of said plurality of individual conductive members.
Claim 4
Dependent Claim
32 words
The memory array, as set forth in claim 1, wherein each of said plurality of individual conductive members has a width smaller than a width of said respective strip of multi-state material.
Claim 5
Dependent Claim
32 words
The memory array, as set forth in claim 1, further comprising an insulator being disposed about each stack formed by said respective strips conductive material and said respective strips of multi-state material.
Claim 6
Dependent Claim
30 words
The memory array, as set forth in claim 1, wherein a portion of each of said plurality of individual conductive members extends above a top surface of said dielectric layer.
Claim 7
Dependent Claim
21 words
The memory array, as set forth in claim 5, further comprising a dielectric spacer disposed about each of said extending portions.
Claim 8
Dependent Claim
28 words
The memory array, as set forth in claim 6, wherein each respective strip of multi-state material is disposed on said respective extending portions and said respective dielectric spacers.
Claim 9
Dependent Claim
18 words
The memory array, as set forth in claim 1, wherein said multi-state material comprises a phase changing material.
Claim 10
Dependent Claim
18 words
The memory array, as set forth in claim 8, wherein said phase changing material comprises a chalcogenide material.
Claim 11
Dependent Claim
136 words
A memory array having a plurality of memory cells, at least a portion of said memory array comprising: a substrate; a dielectric layer disposed on said substrate; a plurality of individual conductive members being formed in said dielectric layer, a first end portion of each of said plurality of individual conductive members extending above said dielectric layer and a second end portion of each of said plurality of individual conductive members being coupled to said substrate; a plurality of dielectric spacers, each of said plurality of dielectric spacers being disposed about a respective first end portion of said plurality of individual conductive members; a continuous layer of multi-state material disposed on a first plurality of said plurality of individual conductive members; and a continuous layer of conductive material disposed on said continuous layer of multi-state material.
Claim 12
Dependent Claim
136 words
A memory array having a plurality of memory cells, at least a portion of said memory array comprising: a substrate; a dielectric layer disposed on said substrate; a plurality of individual conductive members being formed in said dielectric layer, a first end portion of each of said plurality of individual conductive members extending above said dielectric layer and a second end portion of each of said plurality of individual conductive members being coupled to said substrate; a plurality of dielectric spacers, each of said plurality of dielectric spacers being disposed about a respective first end portion of said plurality of individual conductive members; a continuous layer of multi-state material disposed on a first plurality of said plurality of individual conductive members; and a continuous layer of conductive material disposed on said continuous layer of multi-state material.
Claim 13
Dependent Claim
38 words
The memory array, as set forth in claim 10, wherein said substrate comprises a plurality of access devices, each of said plurality of access devices being coupled to a respective one of said plurality of individual conductive members.
Claim 14
Dependent Claim
18 words
The memory array, as set forth in claim 10, wherein said multi-state material comprises a phase changing material.
Claim 15
Dependent Claim
18 words
The memory array, as set forth in claim 10, wherein said phase changing material comprises a chalcogenide material.
Claim 16
Dependent Claim
134 words
A memory array having a plurality of memory cells, at least a portion of said memory array comprising: a plurality of individual conductive members being arranged in rows, each of said plurality of individual conductive members having a width; a plurality of strips of multi-state material, a respective one of said plurality of strips of multi-state material being disposed on a respective one of said rows of said plurality of individual conductive members, each of said plurality of strips of multi-state material having a width greater than the width of said individual conductive members in said respective one of said rows; and a plurality of strips of conductive material, a respective one of said plurality of strips of conductive material being disposed on a respective one of said plurality of strips of multi-state material.
Claim 17
Dependent Claim
134 words
A memory array having a plurality of memory cells, at least a portion of said memory array comprising: a plurality of individual conductive members being arranged in rows, each of said plurality of individual conductive members having a width; a plurality of strips of multi-state material, a respective one of said plurality of strips of multi-state material being disposed on a respective one of said rows of said plurality of individual conductive members, each of said plurality of strips of multi-state material having a width greater than the width of said individual conductive members in said respective one of said rows; and a plurality of strips of conductive material, a respective one of said plurality of strips of conductive material being disposed on a respective one of said plurality of strips of multi-state material.
Claim 18
Dependent Claim
38 words
The memory array, as set forth in claim 14, wherein said substrate comprises a plurality of access devices, each of said plurality of access devices being coupled to a respective one of said plurality of individual conductive members.
Claim 19
Dependent Claim
32 words
The memory array, as set forth in claim 14, further comprising an insulator being disposed about each stack formed by said respective strips conductive material and said respective strips of multi-state material.
Claim 20
Dependent Claim
30 words
The memory array, as set forth in claim 14, wherein a portion of each of said plurality of individual conductive members extends above a top surface of a dielectric layer.
Claim 21
Dependent Claim
21 words
The memory array, as set forth in claim 17, further comprising a dielectric spacer disposed about each of said extending portions.
Claim 22
Dependent Claim
28 words
The memory array, as set forth in claim 18, wherein each respective strip of multi-state material is disposed on said respective extending portions and said respective dielectric spacers.
Claim 23
Dependent Claim
18 words
The memory array, as set forth in claim 14, wherein said multi-state material comprises a phase changing material.
Claim 24
Dependent Claim
18 words
The memory array, as set forth in claim 20, wherein said phase changing material comprises a chalcogenide material.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2002-02-08 | 2002-08-10 | 2003-02-09 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2006-02-08 | 2006-08-10 | 2007-02-09 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2010-02-08 | 2010-08-10 | 2011-02-09 | $7700.00 | Window Closed / Lapsed |