US3796926A
Expired / Lapsed
US
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Bistable resistance device which does not require forming
Assignee: International Business Machines Corp
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Filing: 1971-03-29
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Granted: 1974-03-12
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Expires: 1991-03-29
Abstract
Abstract A switchable device using a doped insulator having two stable resistance states which does not require application of a forming voltage when being fabricated. The insulator is, for example, a multivalent oxide of 100-2,500 A thickness, containing impurities which provide conduction centers. Examples of these impurites include Bi, Sb, As, P, Ti, W, in amounts 0.05-10 percent by weight (1018- 1021 impurities/cm.3). The insulator is contacted by two electrodes which can be metals, such as transition metals. A particularly good device is NbBi alloy - NbBixOy-Bi.
Inventors
- 👤 R Laibowitz
- 👤 K Park
- 👤 J Cole
- 👤 J Cuomo
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 01:38
CPC Classifications
H; H10; H10P; H10P95/00; H10N; H10N70/00; H10N70/011; H10N70/021; H10N70/026; H10N70/028; H10N70/20; H10N70/25; H10N70/801; H10N70/821; H10N70/826; H10N70/881; H10N70/883; H10N70/8833; H10B; H10B63/00; H10B63/20; H10B63/80
Claims Analysis
Total Claims: 5
Claim 1
Independent Claim
96 words
A device exhibiting two stable resistance states in a single quadrant of its current-voltage characteristic, comprising: a first electrode comprising an Nb-Bi alloy having therein an element selected from the group consisting of Bi, Sb, As, P, Ti and W, an insulator comprising an oxide having Nb and Bi therein in contact with said first electrode, said Bi being present in said insulator in an amount 0.05-10 percent by weight of said insulator, and a second electrode in contact with said insulator, said second electrode being selected from the group consisting of Nb, Bi, and Sb.
Claim 2
Independent Claim
64 words
A device exhibiting two stable resistance states in a single quadrant of its current-voltage characteristic, comprising: a first electrode comprised of an alloy of Nb and Bi, a second electrode comprised of a conducting material, and an insulator comprised of Nb oxide having Bi therein in an amount 0.05-10 percent by weight, said insulator being a multivalent oxide with said Bi distributed uniformly therein.
Claim 3
Independent Claim
81 words
A device exhibiting two stable resistance states in a single quadrant of its current-voltage characteristic, comprising: a base electrode comprising Nb, an insulator in contact with said base electrode, said insulator comprising Nb oxide having distributed uniformly therein an impurity selected from the group consisting of Bi, Sb, As, P, Ti, and W in an amount 1018-1021 impurities/cm3, and a counter electrode in contact with said insulator, said counter electrode being selected from the group consisting of Nb, Bi, and Sb.
Claim 4
Dependent Claim
11 words
The device of claim 4, where said insulator is 100-2,500A thick.
Claim 5
Dependent Claim
14 words
The device of claim 4, where said insulator is an anodic oxide of Nb.
References Cited (Backward Citations)
No citation records indexed.
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1977-03-11 | 1977-09-10 | 1978-03-12 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1981-03-11 | 1981-09-10 | 1982-03-12 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1985-03-11 | 1985-09-10 | 1986-03-12 | $7700.00 | Window Closed / Lapsed |