Method of making programmable low impedance interconnect diode element

Claim 1

In a semiconductor structure including a first region of semiconductor material of a first conductivity type, an insulating material over said first region, said insulating layer including a first region of silicon dioxide, a second region of silicon nitride over said first region, and a third layer of silicon dioxide over said second region, a second region of semiconductor material of a second conductivity type over said insulating layer, a method of creating a diode including the step of: applying a voltage between said first and second regions for a time sufficient to create a controlled radius filament of material from at least one of said first or second regions through said insulating material to form a diode.

Claim 3

A method of forming a programmable low impedance interconnect diode element in a CMOS fabrication process, including the steps of: defining a region on the substrate where said programmable low impedance diode interconnect element is to be formed, doping said region with a first conductivity type, removing any oxide from the surface of the wafer at said region, forming a dielectric layer for said programmable low impedance interconnect diode element over said region, said dielectric layer including a first region of silicon dioxide, a second region of silicon nitride over said first region, and a third layer of silicon dioxide over said second region, forming a layer of polysilicon over said dielectric layer, doping said layer of polysilicon with a second conductivity type, defining said polysilicon layer as the upper electrode of said programmable low impedance diode interconnect element, selectively removing said dielectric except under said polysilicon region, continuing said CMOS process sequence.

Claim 4

A method of forming a programmable low impedance interconnect diode element in a CMOS fabrication process, including the steps of: defining a region on the substrate where said programmable low impedance diode interconnect element is to be formed, doping said region with a first conductivity type, removing any oxide from the surface of the wafer at said region, forming a dielectric layer for said programmable low impedance interconnect diode element over said region, said dielectric layer including a first region of silicon dioxide, a second region of silicon nitride over said first region, and a third layer of silicon dioxide over said second region, forming a layer of polysilicon over said dielectric layer, doping said layer of polysilicon with a second conductivity type, defining said polysilicon layer as the upper electrode of said programmable low impedance diode interconnect element, selectively removing said dielectric except under said polysilicon region, continuing said CMOS process sequence.

Claim 5

A method of forming a programmable low impedance diode interconnect element as a portion of a bi-polar process for fabricating a bipolar transistor including the steps of: forming a dielectric for the programmable low impedance diode interconnect element over a selected portion of said base region, said dielectric including a first region of silicon dioxide, a second region of silicon nitride over said first region, and a third layer of silicon dioxide over said second region, depositing, doping and defining a polysilicon layer of conductivity opposite to said base region to serve as the top electrode of said programmable low impedance interconnect element, defining and diffusing an emitter region in a area of the base separate from the area containing the programmable low impedance diode interconnect element.

Claim 6

A method of forming a programmable low impedance diode interconnect element as a portion of a bi-polar process for fabricating a bipolar transistor including the steps of: forming a dielectric for the programmable low impedance diode interconnect element over a selected portion of said base region, said dielectric including a first region of silicon dioxide, a second region of silicon nitride over said first region, and a third layer of silicon dioxide over said second region, depositing, doping and defining a polysilicon layer of conductivity opposite to said base region to serve as the top electrode of said programmable low impedance interconnect element, defining and diffusing an emitter region in a area of the base separate from the area containing the programmable low impedance diode interconnect element.

Claim 7

A method of forming a programmable low impedance interconnect diode element as a portion of a bi-polar process for fabricating a bipolar transistor including the steps of: forming base and emitter regions, forming a passivation layer, opening a contact region in said passivation layer over a selected portion of the base region, forming a dielectric portion for said programmable low impedance diode interconnect element in said defined region, said dielectric portion including a first region of silicon dioxide, a second region of silicon nitride over said first region, and a third layer of silicon dioxide over said second region, forming and defining a polysilicon region to serve as the upper electrode of said programmable low impedance diode interconnect element over said dielectric layer with conductivity opposite to the base of said bipolar transistor.

Claim 8

A method of forming a programmable low impedance interconnect diode element as a portion of a bi-polar process for fabricating a bipolar transistor including the steps of: forming base and emitter regions, forming a passivation layer, opening a contact region in said passivation layer over a selected portion of the base region, forming a dielectric portion for said programmable low impedance diode interconnect element in said defined region, said dielectric portion including a first region of silicon dioxide, a second region of silicon nitride over said first region, and a third layer of silicon dioxide over said second region, forming and defining a polysilicon region to serve as the upper electrode of said programmable low impedance diode interconnect element over said dielectric layer with conductivity opposite to the base of said bipolar transistor.