Semiconductor structure with fusible link and method

Claim 1

In a method for forming an array in a semiconductor structure, providing a semiconductor body having a planar surface, forming a plurality of semiconductor devices in the semiconductor body having areas extending to said surface, forming a layer of insulating material on said surface, forming a plurality of spaced separate fusible links on planar portions of the layer of insulating material with each of the fusible links having a portion which is relatively precise and uniform in thicness and width throughout its length so that it can be fused with a relatively precise current level flowing through the same, forming additional layer of insulating material over said first named layer of insulating material, said fusible links and said devices, forming contact openings remote from said precise portions and extending through at least said additional layer of insulating material, forming a lead structure on said additional layer of insulating material extending through said contact openings to establish electrical conducting paths between said fusible links and said devices so that said fusible links are in series with said devices, supplying current to said lead structure for selectively blowing certain of said fusible links to provide the desired array, said current being of a level which is insufficient to harm the semiconductor devices connected to the fusing links but being sufficient to cause said fusible links to blow.