US4589008A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Apparatus for electrically joining the ends of substantially parallel semiconductor lines
Assignee: Intersil Corp
•
Filing: 1981-09-04
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Granted: 1986-05-13
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Expires: 2001-09-04
Abstract
Abstract Apparatus, comprising a series of staggered metal contacts, is used to join adjacent ends of adjacent sets of substantially parallel semiconductor lines. The lines of one set can have a conductivity type opposite that of the lines of the adjacent set. Also, one of the sets may comprise epitaxial silicon, grown on an insulating substrate such as sapphire, while the other set comprises polycrystalline silicon.
Inventors
- 👤 Roger G. Stewart
- 👤 Moshe Mazin
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-26 19:21
CPC Classifications
H; H10; H10W; H10W70/00; H10W70/60; H10W70/62; H10W70/66; H10W70/662; G; G11; G11C; G11C5/00; G11C5/02; G11C5/025; H10D; H10D86/00; Y; Y10; Y10S; Y10S257/00; Y10S257/91; Y10S257/926
Claims Analysis
Total Claims: 12
Claim 1
Independent Claim
127 words
Apparatus for electrically joining ends of a first set of substantially parallel lines of one type semiconductor material to adjacent ends of a second set of equal number, substantially parallel lines of a second type semiconductor material, comprising a plurality of metal contacts, each of which overlaps the adjacent ends of one line from each of said sets, said metal contacts being wider than said semiconductor lines in a direction perpendicular to the direction in which said lines extend and being staggered in the direction in which said parallel lines extend in order to enable said metal contacts to overlap the ends of said lines while occupying the minimum space necessary in a direction substantially parallel to the direction in which said substantially parallel semiconductor lines extend.
Claim 2
Dependent Claim
127 words
Apparatus for electrically joining ends of a first set of substantially parallel lines of one type semiconductor material to adjacent ends of a second set of equal number, substantially parallel lines of a second type semiconductor material, comprising a plurality of metal contacts, each of which overlaps the adjacent ends of one line from each of said sets, said metal contacts being wider than said semiconductor lines in a direction perpendicular to the direction in which said lines extend and being staggered in the direction in which said parallel lines extend in order to enable said metal contacts to overlap the ends of said lines while occupying the minimum space necessary in a direction substantially parallel to the direction in which said substantially parallel semiconductor lines extend.
Claim 3
Dependent Claim
28 words
The apparatus of claim 1 wherein said first set of substantially parallel semiconductor lines comprises a set of epitaxial, single crystal semiconductor lines formed on an insulating substrate.
Claim 4
Dependent Claim
22 words
The apparatus of claim 2 wherein said insulating substrate is comprised of sapphire and said epitaxial semiconductor material is comprised of silicon.
Claim 5
Dependent Claim
23 words
The apparatus of claim 3 wherein said semiconductor lines of said second set of substantially parallel semiconductor lines are comprised of polycrystalline silicon.
Claim 6
Dependent Claim
64 words
The apparatus of claim 4 wherein said metal contacts are arranged in two rows which extend in a direction perpendicular to the direction in which said substantially parallel semiconductor lines extend, and adjacent metal contacts are placed in alternate ones of said rows, whereby said metal contact will occupy the minimum space necessary in the direction in which said substantially parallel semiconductor lines extend.
Claim 7
Dependent Claim
25 words
The apparatus of claim 5 wherein each of the lines in each of said sets of substantially parallel semiconductor lines has the same conductivity type.
Claim 8
Dependent Claim
39 words
The apparatus of claim 6 wherein the conductivity type of said lines of said first set of substantially parallel semiconductor lines is opposite to the conductivity type of said lines of said second set of substantially parallel semiconductor lines.
Claim 9
Dependent Claim
22 words
The apparatus of claim 7 wherein said lines of said first set of substantially parallel semiconductor lines are comprised of polycrystalline silicon.
Claim 10
Dependent Claim
21 words
The apparatus of claim 8 wherein said lines of said second set of substantially parallel semiconductor lines are comprised of silicon.
Claim 11
Dependent Claim
29 words
The apparatus of claim 9 wherein said lines of said second set of substantially parallel semiconductor lines are comprised of silicon which was epitaxially grown on an insulating substrate.
Claim 12
Dependent Claim
39 words
The apparatus of claim 9 wherein said lines of said second set of substantially parallel semiconductor lines are comprised of doped silicon regions of a first conductivity type which extend into a body of silicon of opposite conductivity type.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1989-05-12 | 1989-11-11 | 1990-05-13 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1993-05-12 | 1993-11-11 | 1994-05-13 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1997-05-12 | 1997-11-11 | 1998-05-13 | $7700.00 | Window Closed / Lapsed |