US6566700B2
Expired / Lapsed
US
⏱️ 0.0 years remaining
Carbon-containing interfacial layer for phase-change memory
Assignee: Ovonyx Memory Technology LLC
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Filing: 2001-10-11
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Granted: 2003-05-20
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Expires: 2021-10-11
Abstract
Abstract A phase-change memory cell may be formed with a carbon-containing interfacial layer that heats a phase-change material. By forming the phase-change material in contact, in one embodiment, with the carbon containing interfacial layer, the amount of heat that may be applied to the phase-change material, at a given current and temperature, may be increased. In some embodiments, the performance of the interfacial layer at high temperatures may be improved by using a wide band gap semiconductor material such as silicon carbide.
Inventors
- 👤 Daniel Xu
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 12:45
CPC Classifications
H; H10; H10N; H10N70/00; H10N70/011; G; G11; G11C; G11C13/00; G11C13/0002; G11C13/0004; H10N70/20; H10N70/231; H10N70/801; H10N70/821; H10N70/826; H10N70/841; H10N70/8413; H10N70/881; H10N70/882; H10N70/8828
Claims Analysis
Total Claims: 21
Claim 1
Independent Claim
22 words
A memory comprising: a surface; a silicon carbide interfacial layer over said surface; and a phase-change material over said silicon carbide layer.
Claim 2
Dependent Claim
22 words
A memory comprising: a surface; a silicon carbide interfacial layer over said surface; and a phase-change material over said silicon carbide layer.
Claim 3
Dependent Claim
16 words
The memory of claim 1 wherein said surface includes a conductive layer over a semiconductor substrate.
Claim 4
Dependent Claim
16 words
The memory of claim 1 wherein said silicon carbide layer is doped with conductivity-type determining impurities.
Claim 5
Dependent Claim
29 words
The memory of claim 3 including an insulator positioned over said surface, a pore formed through said insulator, said carbon-containing interfacial layer formed in said pore over said surface.
Claim 6
Dependent Claim
20 words
The memory of claim 4 wherein said phase-change material is formed on said carbon-containing interfacial layer and in said pore.
Claim 7
Dependent Claim
12 words
The memory of claim 5 including a sidewall spacer in said pore.
Claim 8
Dependent Claim
19 words
The memory of claim 6 wherein said sidewall spacer is positioned between said interfacial layer and said phase-change material.
Claim 9
Dependent Claim
13 words
The memory of claim 1 wherein said phase-change material includes a chalcogenide material.
Claim 10
Dependent Claim
36 words
An electronic device comprising: digital signal processor; and a memory coupled to said processor, said memory including a surface, a silicon carbide interfacial layer over said surface and a phase-change material over said silicon carbide layer.
Claim 11
Dependent Claim
36 words
An electronic device comprising: digital signal processor; and a memory coupled to said processor, said memory including a surface, a silicon carbide interfacial layer over said surface and a phase-change material over said silicon carbide layer.
Claim 12
Dependent Claim
13 words
The device of claim 9 wherein said electronic device is a storage device.
Claim 13
Dependent Claim
14 words
The device of claim 10 wherein said storage device is part of a computer.
Claim 14
Dependent Claim
17 words
The device of claim 11 including a processor, an interface and a bus coupled to said storage.
Claim 15
Dependent Claim
23 words
A memory comprising: a semiconductor substrate; a silicon carbide layer positioned over said substrate; and a phase-change material over said silicon carbide layer.
Claim 16
Dependent Claim
23 words
A memory comprising: a semiconductor substrate; a silicon carbide layer positioned over said substrate; and a phase-change material over said silicon carbide layer.
Claim 17
Dependent Claim
18 words
The memory of claim 13 including a conductive layer between said semiconductor substrate and said silicon carbide layer.
Claim 18
Dependent Claim
33 words
The memory of claim 14 including an insulator over said conductive layer, said insulator having a pore defined therein, and said phase-change material and said silicon carbide layer being formed in said pore.
Claim 19
Dependent Claim
12 words
The memory of claim 13 wherein said silicon carbide layer is doped.
Claim 20
Dependent Claim
11 words
The memory of claim 16 wherein said phase-change material includes chalcogenide.
Claim 21
Dependent Claim
18 words
The memory of claim 17 including a sidewall spacer between said phase-change material and said silicon carbide layer.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
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| 3.5 Years (Year 4) | 2006-05-19 | 2006-11-18 | 2007-05-20 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2010-05-19 | 2010-11-18 | 2011-05-20 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2014-05-19 | 2014-11-18 | 2015-05-20 | $7700.00 | Window Closed / Lapsed |