US4433342A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Amorphous switching device with residual crystallization retardation
Assignee: Harris Corp
•
Filing: 1981-04-06
•
Granted: 1984-02-21
•
Expires: 2001-04-06
Abstract
Abstract A residual crystallization retardation layer is provided between the non-crystalline switchable semiconductor layer and each electrode structure. Amorphous germanium, silicon or carbon form good crystallization retardation layers and also minimize electromigration and reduce solubility of tellurium in the electrodes.
Inventors
- 👤 Vipin N. Patel
- 👤 John L. Conarroe, Jr.
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-24 06:18
CPC Classifications
H; H10; H10N; H10N70/00; H10N70/20; H10N70/231; H10N70/801; H10N70/821; H10N70/826; H10N70/881; H10N70/882; H10N70/8828; Y; Y10; Y10S; Y10S257/00; Y10S257/928
Claims Analysis
Total Claims: 3
Claim 1
Independent Claim
57 words
An amorphous semiconductor device switchable from a high resistance amorphous state to a low resistance crystalline state comprising: a pair of electrode structures; a layer of amorphous germanium telluride forming the switchable layer between said pair of electrode structures; and a thin retarding layer of amorphous germanium material between said germanium telluride layer and each electrode structure.
Claim 2
Dependent Claim
57 words
An amorphous semiconductor device switchable from a high resistance amorphous state to a low resistance crystalline state comprising: a pair of electrode structures; a layer of amorphous germanium telluride forming the switchable layer between said pair of electrode structures; and a thin retarding layer of amorphous germanium material between said germanium telluride layer and each electrode structure.
Claim 3
Dependent Claim
23 words
The amorphous semiconductor device according to claim 1 wherein each retarding layer has a thickness in the range of 20 to 500 angstroms.
References Cited (Backward Citations)
SU291622A1
Cited
US3432729A
Cited
US3611063A
Cited
US3588639A
Cited
DE2041401A1
Cited
US3980505A
Cited
US3877049A
Cited
US3918032A
Cited
US4167806A
Cited
US4115872A
Cited
US4174521A
Cited
US4366614A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1987-02-20 | 1987-08-22 | 1988-02-21 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1991-02-20 | 1991-08-22 | 1992-02-21 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1995-02-20 | 1995-08-22 | 1996-02-21 | $7700.00 | Window Closed / Lapsed |