US6404665B1
Expired / Lapsed
US
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Compositionally modified resistive electrode
Assignee: Ovonyx Memory Technology LLC
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Filing: 2000-09-29
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Granted: 2002-06-11
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Expires: 2020-09-29
Abstract
Abstract An apparatus comprising a volume of memory material and a pair of spacedly disposed conductors. An electrode coupled to the volume of memory material and disposed between the volume of memory material and one conductor comprises a first material having a first resistivity value and a second material having a different second resistivity value formed by exposing the first material to a gaseous ambient.
Inventors
- 👤 Tyler A. Lowrey
- 👤 Daniel Xu
- 👤 Chien Chiang
- 👤 Patrick J. Neschleba
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 10:41
CPC Classifications
H; H10; H10D; H10D48/00; H10D48/30; H10D48/32; H10D48/366; G; G11; G11C; G11C13/00; G11C13/0002; G11C13/0004; H10B; H10B63/00; H10B63/20; H10B63/80; H10N; H10N70/00; H10N70/011; H10N70/20; H10N70/231; H10N70/801; H10N70/821; H10N70/826; H10N70/841; H10N70/8413; H10N70/881; H10N70/882; H10N70/8828; G11C2213/00; G11C2213/70; G11C2213/72
Claims Analysis
Total Claims: 26
Claim 1
Independent Claim
61 words
An apparatus comprising: a volume of memory material; a conductor; and an electrode coupled to the volume of memory material and disposed between the volume of memory material and the conductor, the electrode comprising a first portion having a first resistivity value and a second portion having a different second resistivity value formed by exposing the first portion to an ambient.
Claim 2
Independent Claim
61 words
An apparatus comprising: a volume of memory material; a conductor; and an electrode coupled to the volume of memory material and disposed between the volume of memory material and the conductor, the electrode comprising a first portion having a first resistivity value and a second portion having a different second resistivity value formed by exposing the first portion to an ambient.
Claim 3
Dependent Claim
18 words
The apparatus of claim 1 , wherein the second resistivity value is greater than the first resistivity value.
Claim 4
Dependent Claim
21 words
The apparatus of claim 2 , wherein the second portion of the electrode is disposed adjacent the volume of memory material.
Claim 5
Dependent Claim
47 words
The apparatus of claim 1 , wherein the first portion of the electrode has a first thermal coefficient of resistivity and the second portion has a second thermal coefficient of resistivity that has a lower variation to positive temperature change than the first thermal coefficient of resistivity.
Claim 6
Dependent Claim
21 words
The apparatus of claim 4 , wherein the first portion of the electrode comprises one of polycrystalline silicon and titanium nitride.
Claim 7
Dependent Claim
80 words
The apparatus of claim 3 , wherein the volume of memory material has two resistivity values, the volume of memory material being settable to one of the resistivity values in response to an electrical input signal, and wherein the distance between the volume of memory material and the conductor defines a depth of the electrode and a depth of the second material is related to a voltage required to set a resistivity value of the volume of the memory material.
Claim 8
Dependent Claim
22 words
The apparatus of claim 3 , wherein the second material comprises one of silicon dioxide, silicon nitride, silicon oxynitride and titanium oxynitride.
Claim 9
Independent Claim
98 words
An apparatus comprising: a chalcogenide memory element; and a heater element in thermal communication with the chalcogenide memory element, the heater element comprising: a first zone having a first resistivity and a first thermal coefficient of resistivity; and a second zone formed by exposing a portion of the first zone to an ambient and having a second resistivity and a second thermal coefficient of resistivity, wherein the first resistivity is lower than the second resistivity, and wherein the second thermal coefficient of resistivity has a lower variation to positive temperature change than the first thermal coefficient of resistivity.
Claim 10
Independent Claim
98 words
An apparatus comprising: a chalcogenide memory element; and a heater element in thermal communication with the chalcogenide memory element, the heater element comprising: a first zone having a first resistivity and a first thermal coefficient of resistivity; and a second zone formed by exposing a portion of the first zone to an ambient and having a second resistivity and a second thermal coefficient of resistivity, wherein the first resistivity is lower than the second resistivity, and wherein the second thermal coefficient of resistivity has a lower variation to positive temperature change than the first thermal coefficient of resistivity.
Claim 11
Dependent Claim
28 words
The apparatus of claim 8 , wherein the first zone comprises two segments, and one segment of the first zone is disposed directly adjacent the chalcogenide memory element.
Claim 12
Dependent Claim
55 words
The apparatus of claim 8 , wherein the chalcogenide memory element has two different states, the chalcogenide memory element being settable to one of the states in response to an electrical input signal, and a dimension of the second zone is related to a voltage required to set a state of the chalcogenide memory element.
Claim 13
Independent Claim
99 words
An apparatus comprising: a plurality of memory elements, each memory element comprising a volume of memory material having two resistivity values, the volume of memory material being settable to one of the resistivity values in response to a selected electrical input signal; a conductor coupled to each memory element; and an electrode coupled to the volume of memory material and disposed between the volume of memory material and the conductor, the electrode comprising a first portion having a first resistivity value and a second portion having a different second resistivity value formed by exposing the electrode to an ambient.
Claim 14
Independent Claim
99 words
An apparatus comprising: a plurality of memory elements, each memory element comprising a volume of memory material having two resistivity values, the volume of memory material being settable to one of the resistivity values in response to a selected electrical input signal; a conductor coupled to each memory element; and an electrode coupled to the volume of memory material and disposed between the volume of memory material and the conductor, the electrode comprising a first portion having a first resistivity value and a second portion having a different second resistivity value formed by exposing the electrode to an ambient.
Claim 15
Dependent Claim
18 words
The apparatus of claim 11 , wherein the second resistivity value is greater than the first resistivity value.
Claim 16
Dependent Claim
21 words
The apparatus of claim 12 , wherein the second material of the electrode is disposed adjacent the volume of memory material.
Claim 17
Dependent Claim
47 words
The apparatus of claim 11 , wherein the first portion of the electrode has a first thermal coefficient of resistivity and the second portion has a second thermal coefficient of resistivity that has a lower variation to positive temperature change than the first thermal coefficient of resistivity.
Claim 18
Dependent Claim
21 words
The apparatus of claim 12 , wherein the first resistivity value corresponds with a resistivity value for a doped polycrystalline silicon.
Claim 19
Dependent Claim
82 words
The apparatus of claim 14 , wherein the volume of memory material has two resistance values, the volume of memory material being settable to one of the resistance values in response to a selected electrical input signal, and wherein the distance between the volume of memory material and the one contact defines a depth of the electrode and a depth of the second material is related to a voltage required to set a resistance value of the volume of the memory material.
Claim 20
Dependent Claim
20 words
The apparatus of claim 14 , wherein the second material comprises one of silicon carbide, silicon dioxide, and silicon nitride.
Claim 21
Independent Claim
68 words
A method comprising: introducing between two conductors formed on a substrate an electrode material; modifying a portion of the electrode material so that the electrode material comprises a first portion and a different second portion by exposing the electrode material to a gaseous ambient; and introducing a volume of memory material over the electrode material, the electrode material and the volume of memory material coupled to a conductor.
Claim 22
Independent Claim
68 words
A method comprising: introducing between two conductors formed on a substrate an electrode material; modifying a portion of the electrode material so that the electrode material comprises a first portion and a different second portion by exposing the electrode material to a gaseous ambient; and introducing a volume of memory material over the electrode material, the electrode material and the volume of memory material coupled to a conductor.
Claim 23
Dependent Claim
41 words
The method of claim 18 , wherein modifying a portion of the electrode material comprises exposing the electrode material to a gaseous ambient at elevated temperature to introduce a modifying species that changes the thermal coefficient resistivity of the second portion.
Claim 24
Dependent Claim
12 words
The method of claim 19 , wherein exposing comprises rapid thermal annealing.
Claim 25
Dependent Claim
56 words
The method of claim 19 , wherein the distance between the volume of memory material and the one conductor defines a depth of the electrode material and introducing the modifying species comprises introducing the modifying species to a depth related to a voltage required to set a resistance value of the volume of the memory material.
Claim 26
Dependent Claim
28 words
The method of claim 21 , wherein modifying comprises modifying a portion of the electrode such that the modified portion is directly adjacent the volume of memory material.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2005-06-10 | 2005-12-10 | 2006-06-11 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2009-06-10 | 2009-12-10 | 2010-06-11 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2013-06-10 | 2013-12-10 | 2014-06-11 | $7700.00 | Window Closed / Lapsed |