US5970336A
Expired / Lapsed
US
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Method of making memory cell incorporating a chalcogenide element
Assignee: Round Rock Research LLC
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Filing: 1997-10-30
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Granted: 1999-10-19
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Expires: 2017-10-30
Abstract
Abstract A memory cell incorporating a chalcogenide element and a method of making same is disclosed. In the method, a doped silicon substrate is provided with two or more polysilicon plugs to form an array of diode memory cells. A layer of silicon nitride is disposed over the plugs. Using a poly-spacer process, small pores are formed in the silicon nitride to expose a portion of the polysilicon plugs. A chalcogenide material is disposed in the pores by depositing a layer of chalcogenide material on the silicon nitride layer and planarizing the chalcogenide layer to the silicon nitride layer using CMP. A layer of TiN is next deposited over the plugs, followed by a metallization layer. The TiN and metallization layers are then masked and etched to define memory cell areas.
Inventors
- 👤 Graham R. Wolstenholme
- 👤 Fernando Gonzalez
- 👤 Russell C. Zahorik
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 17:56
CPC Classifications
H; H10; H10D; H10D64/00; H10D64/01; H10D64/011; H10D64/0111; H10B; H10B63/00; H10B63/10; H10B63/20; H10W; H10W20/00; H10W20/01; H10W20/071; H10W20/081; H10W20/084
Claims Analysis
Total Claims: 29
Claim 1
Independent Claim
94 words
A method of forming a chalcogenide element, the method comprising the steps of: (a) forming a layer of insulating material on a substrate, the layer of insulating material having an upper surface; (b) forming an opening in the layer of insulating material; (c) forming a layer of chalcogenide material over at least a portion of the upper surface of the layer of insulating material and within the opening; (d) removing the layer of chalcogenide material from the upper surface of the layer of insulating material, leaving the layer of chalcogenide material within the opening.
Claim 2
Independent Claim
94 words
A method of forming a chalcogenide element, the method comprising the steps of: (a) forming a layer of insulating material on a substrate, the layer of insulating material having an upper surface; (b) forming an opening in the layer of insulating material; (c) forming a layer of chalcogenide material over at least a portion of the upper surface of the layer of insulating material and within the opening; (d) removing the layer of chalcogenide material from the upper surface of the layer of insulating material, leaving the layer of chalcogenide material within the opening.
Claim 3
Dependent Claim
31 words
The method, as set forth in claim 1, wherein step (a) comprises the step of: forming a layer of nitride on the substrate, the layer of nitride having the upper surface.
Claim 4
Dependent Claim
52 words
The method, as set forth in claim 1, wherein step (a) comprises the step of: forming a layer of material over the layer of insulating material; forming a window in the layer of material; and forming a spacer within the window, the spacer defining the opening in the layer of insulating material.
Claim 5
Dependent Claim
31 words
The method, as set forth in claim 1, wherein step (d) comprises the step of: planarizing the layer of chalcogenide material to the upper surface of the layer of insulating material.
Claim 6
Dependent Claim
37 words
The method, as set forth in claim 4, wherein the step of planarizing comprises the step of: planarizing the layer of chalcogenide material to the upper surface of the layer of insulating material using chemical mechanical planarization.
Claim 7
Dependent Claim
33 words
The method, as set forth in claim 5, wherein step (a) comprises the step of: forming the layer of insulating material from a material that acts as a stop for chemical mechanical planarization.
Claim 8
Dependent Claim
36 words
The method, as set forth in claim 4, wherein the step of planarizing comprises the step of: planarizing the layer of chalcogenide material to the upper surface of the layer of insulating material using an etchant.
Claim 9
Dependent Claim
45 words
The method, as set forth in claim 1, further comprising the steps of: forming a first electrode disposed between the substrate and the layer of chalcogenide material within the opening; and forming a second electrode disposed over the layer of chalcogenide material within the opening.
Claim 10
Dependent Claim
22 words
The method, as set forth in claim 8, wherein each of the first electrode and the second electrode comprise multiple conductive layers.
Claim 11
Dependent Claim
31 words
The method, as set forth in claim 1, further comprising the step of: providing an access device, the access device being coupled to the layer of chalcogenide material within the opening.
Claim 12
Independent Claim
121 words
A method of forming a memory cell, the method comprising the steps of: (a) providing an access device on a substrate; (b) forming a layer of insulating material on the substrate, the layer of insulating material having an upper surface; (c) forming an opening in the layer of insulating material, the opening extending through the layer of insulating material to expose at least a portion of the access device; (d) forming a layer of chalcogenide material over at least a portion of the upper surface of the layer of insulating material and within the opening; (e) removing the layer of chalcogenide material from the upper surface of the layer of insulating material, leaving the layer of chalcogenide material within the opening.
Claim 13
Independent Claim
121 words
A method of forming a memory cell, the method comprising the steps of: (a) providing an access device on a substrate; (b) forming a layer of insulating material on the substrate, the layer of insulating material having an upper surface; (c) forming an opening in the layer of insulating material, the opening extending through the layer of insulating material to expose at least a portion of the access device; (d) forming a layer of chalcogenide material over at least a portion of the upper surface of the layer of insulating material and within the opening; (e) removing the layer of chalcogenide material from the upper surface of the layer of insulating material, leaving the layer of chalcogenide material within the opening.
Claim 14
Dependent Claim
21 words
The method, as set forth in claim 11, wherein step (a) comprises the step of: forming a diode in the substrate.
Claim 15
Dependent Claim
31 words
The method, as set forth in claim 11, wherein step (b) comprises the step of: forming a layer of nitride on the substrate, the layer of nitride having the upper surface.
Claim 16
Dependent Claim
52 words
The method, as set forth in claim 11, wherein step (c) comprises the step of: forming a layer of material over the layer of insulating material; forming a window in the layer of material; and forming a spacer within the window, the spacer defining the opening in the layer of insulating material.
Claim 17
Dependent Claim
31 words
The method, as set forth in claim 11, wherein step (e) comprises the step of: planarizing the layer of chalcogenide material to the upper surface of the layer of insulating material.
Claim 18
Dependent Claim
37 words
The method, as set forth in claim 15, wherein the step of planarizing comprises the step of: planarizing the layer of chalcogenide material to the upper surface of the layer of insulating material using chemical mechanical planarization.
Claim 19
Dependent Claim
33 words
The method, as set forth in claim 16, wherein step (b) comprises the step of: forming the layer of insulating material from a material that acts as a stop for chemical mechanical planarization.
Claim 20
Dependent Claim
45 words
The method, as set forth in claim 11, further comprising the steps of: forming a first electrode disposed between the substrate and the layer of chalcogenide material within the opening; and forming a second electrode disposed over the layer of chalcogenide material within the opening.
Claim 21
Dependent Claim
22 words
The method, as set forth in claim 18, wherein each of the first electrode and the second electrode comprise multiple conductive layers.
Claim 22
Independent Claim
99 words
A method of forming a chalcogenide element, the method comprising the steps of: (a) forming a layer of insulating material on a substrate, the layer of insulating material having an upper surface; (b) forming an opening in the layer of insulating material; (c) forming a layer of chalcogenide material over at least a portion of the upper surface of the layer of insulating material and within the opening; (d) removing the layer of chalcogenide material from the upper surface of the layer of insulating material using chemical mechanical planarization, thereby leaving the layer of chalcogenide material within the opening.
Claim 23
Independent Claim
99 words
A method of forming a chalcogenide element, the method comprising the steps of: (a) forming a layer of insulating material on a substrate, the layer of insulating material having an upper surface; (b) forming an opening in the layer of insulating material; (c) forming a layer of chalcogenide material over at least a portion of the upper surface of the layer of insulating material and within the opening; (d) removing the layer of chalcogenide material from the upper surface of the layer of insulating material using chemical mechanical planarization, thereby leaving the layer of chalcogenide material within the opening.
Claim 24
Dependent Claim
31 words
The method, as set forth in claim 20, wherein step (a) comprises the step of: forming a layer of nitride on the substrate, the layer of nitride having the upper surface.
Claim 25
Dependent Claim
52 words
The method, as set forth in claim 20, wherein step (b) comprises the step of: forming a layer of material over the layer of insulating material; forming a window in the layer of material; and forming a spacer within the window, the spacer defining the opening in the layer of insulating material.
Claim 26
Dependent Claim
37 words
The method, as set forth in claim 20, wherein step (a) comprises the step of: forming the layer of insulating material from a material that acts as a stop for the chemical mechanical planarization of step (d).
Claim 27
Dependent Claim
45 words
The method, as set forth in claim 20, further comprising the steps of forming a first electrode disposed between the substrate and the layer of chalcogenide material within the opening; and forming a second electrode disposed over the layer of chalcogenide material within the opening.
Claim 28
Dependent Claim
22 words
The method, as set forth in claim 24, wherein each of the first electrode and the second electrode comprise multiple conductive layers.
Claim 29
Dependent Claim
31 words
The method, as set forth in claim 20, further comprising the step of: providing an access device, the access device being coupled to the layer of chalcogenide material within the opening.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2002-10-18 | 2003-04-19 | 2003-10-19 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2006-10-18 | 2007-04-19 | 2007-10-19 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2010-10-18 | 2011-04-19 | 2011-10-19 | $7700.00 | Window Closed / Lapsed |