US5998244A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Memory cell incorporating a chalcogenide element and method of making same
Assignee: Round Rock Research LLC
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Filing: 1996-08-22
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Granted: 1999-12-07
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Expires: 2016-08-22
Abstract
Abstract A memory cell incorporating a chalcogenide element and a method of making same is disclosed. In the method, a doped silicon substrate is provided with two or more polysilicon plugs to form an array of diode memory cells. A layer of silicon nitride is disposed over the plugs. Using a poly-spacer process, small pores are formed in the silicon nitride to expose a portion of the polysilicon plugs. A chalcogenide material is disposed in the pores by depositing a layer of chalcogenide material on the silicon nitride layer and planarizing the chalcogenide layer to the silicon nitride layer using CMP. A layer of TiN is next deposited over the plugs, followed by a metallization layer. The TiN and metallization layers are then masked and etched to define memory cell areas.
Inventors
- 👤 Graham R. Wolstenholme
- 👤 Fernando Gonzalez
- 👤 Russell C. Zahorik
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 16:54
CPC Classifications
H; H10; H10D; H10D64/00; H10D64/01; H10D64/011; H10D64/0111; H10B; H10B63/00; H10B63/10; H10B63/20; H10W; H10W20/00; H10W20/01; H10W20/071; H10W20/081; H10W20/084
Claims Analysis
Total Claims: 22
Claim 1
Independent Claim
112 words
A method of forming a chalcogenide element in a memory cell, comprising the steps of: (a) forming a conducting element in a semiconductor substrate; (b) forming a first insulating layer on said semiconductor substrate overlying said conducting element; (c) forming a pore in said first insulating layer extending to said conducting element; (d) forming a layer of chalcogenide material on said first insulating layer, wherein a portion of said layer of chalcogenide material is disposed in said pore and contacts said conductive element; (e) planarizing said layer of chalcogenide material to said first insulating layer by chemical mechanical planarization; and (f) forming a first conducting layer in contact with said chalcogenide material.
Claim 2
Independent Claim
112 words
A method of forming a chalcogenide element in a memory cell, comprising the steps of: (a) forming a conducting element in a semiconductor substrate; (b) forming a first insulating layer on said semiconductor substrate overlying said conducting element; (c) forming a pore in said first insulating layer extending to said conducting element; (d) forming a layer of chalcogenide material on said first insulating layer, wherein a portion of said layer of chalcogenide material is disposed in said pore and contacts said conductive element; (e) planarizing said layer of chalcogenide material to said first insulating layer by chemical mechanical planarization; and (f) forming a first conducting layer in contact with said chalcogenide material.
Claim 3
Dependent Claim
26 words
The method of claim 1, further comprising the step of: providing a layer of titanium silicide between said layer of chalcogenide material and said conductive element.
Claim 4
Dependent Claim
23 words
The method of claim 1, further comprising the step of: providing an electrode between said layer of chalcogenide material and said conducting element.
Claim 5
Dependent Claim
23 words
The method of claim 3, further comprising the step of: providing a second conducting layer between said electrode layer and said conducting element.
Claim 6
Dependent Claim
25 words
The method of claim 1, further comprising the step of: providing a third conducting layer between said first insulating layer and said first conducting layer.
Claim 7
Independent Claim
126 words
A method of forming a chalcogenide element in a memory cell, comprising the steps of: (a) providing a conducting element in a semiconductor substrate; (b) forming a first insulating layer on said semiconductor substrate; (c) forming a pore in said first insulating layer extending to said conducting element; (d) forming a layer of chalcogenide material on said first insulating layer, wherein a portion of said layer of chalcogenide is disposed in said pore and contacts said conducting element; (e) selectively removing said portion of said layer of chalcogenide material that is disposed on said first insulating layer by chemical mechanical planarization (CMP); (f) forming a first conducting layer in contact with said chalcogenide material; and (g) forming a second conducting layer on said first conducting layer.
Claim 8
Independent Claim
126 words
A method of forming a chalcogenide element in a memory cell, comprising the steps of: (a) providing a conducting element in a semiconductor substrate; (b) forming a first insulating layer on said semiconductor substrate; (c) forming a pore in said first insulating layer extending to said conducting element; (d) forming a layer of chalcogenide material on said first insulating layer, wherein a portion of said layer of chalcogenide is disposed in said pore and contacts said conducting element; (e) selectively removing said portion of said layer of chalcogenide material that is disposed on said first insulating layer by chemical mechanical planarization (CMP); (f) forming a first conducting layer in contact with said chalcogenide material; and (g) forming a second conducting layer on said first conducting layer.
Claim 9
Dependent Claim
26 words
The method of claim 6, further comprising the step of: providing a layer of titanium silicide between said layer of chalcogenide material and said conductive element.
Claim 10
Dependent Claim
25 words
The method of claim 6, further comprising the step of: providing a layer of carbon between said layer of chalcogenide material and said conductive element.
Claim 11
Dependent Claim
25 words
The method of claim 8, further comprising the step of: providing a layer of titanium silicide between said layer of carbon and said conductive element.
Claim 12
Dependent Claim
25 words
The method of claim 6, further comprising the step of: providing a second conducting layer between said first insulating layer and said first conducting layer.
Claim 13
Independent Claim
83 words
A method of forming a chalcogenide element in a memory cell, comprising the steps of: (a) providing a semiconductor substrate; (b) providing a conducting element in said semiconductor substrate; (c) forming a recess in said conducting element; (d) forming a first insulating layer in said recess; (e) forming a pore in said first insulating layer extending to said conducting element; (f) forming a layer of chalcogenide material in said pore; and (g) forming a first conducting layer in contact with said chalcogenide material.
Claim 14
Independent Claim
83 words
A method of forming a chalcogenide element in a memory cell, comprising the steps of: (a) providing a semiconductor substrate; (b) providing a conducting element in said semiconductor substrate; (c) forming a recess in said conducting element; (d) forming a first insulating layer in said recess; (e) forming a pore in said first insulating layer extending to said conducting element; (f) forming a layer of chalcogenide material in said pore; and (g) forming a first conducting layer in contact with said chalcogenide material.
Claim 15
Dependent Claim
63 words
The method of claim 11, wherein said step of forming a chalcogenide layer comprises: forming a layer of chalcogenide material on said first insulating layer, wherein a portion of said layer of chalcogenide material is disposed in said pore and contacts said conductive element; and selectively removing said portion of said layer of chalcogenide material that is disposed superadjacent said first insulating layer.
Claim 16
Dependent Claim
33 words
The method of claim 12, wherein said step of selectively removing said portion of said chalcogenide layer comprises: planarizing said layer of chalcogenide material to said first insulating layer by chemical mechanical planarization.
Claim 17
Dependent Claim
26 words
The method of claim 11, further comprising the step of: providing a layer of titanium silicide between said layer of chalcogenide material and said conductive element.
Claim 18
Dependent Claim
25 words
The method of claim 11, further comprising the step of: providing a layer of carbon between said layer of chalcogenide material and said conductive element.
Claim 19
Dependent Claim
25 words
The method of claim 15, further comprising the step of: providing a second conducting layer between said first insulating layer and said first conducting layer.
Claim 20
Dependent Claim
25 words
The method of claim 11, further comprising the step of: providing a second conducting layer between said first insulating layer and said first conducting layer.
Claim 21
Dependent Claim
59 words
The method of claim 11, wherein said step of forming said first insulating layer in said recess comprises: forming a layer of insulating material on said substrate, wherein a portion of said insulating material is disposed in said recess and contacts said conductive element; and selectively removing said portion of said insulating layer that is disposed on said substrate.
Claim 22
Dependent Claim
31 words
The method of claim 18, wherein said step of selectively removing said portion of said insulating layer comprises: planarizing said layer of insulating material to said substrate by chemical mechanical planarization.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2002-12-06 | 2003-06-07 | 2003-12-07 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2006-12-06 | 2007-06-07 | 2007-12-07 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2010-12-06 | 2011-06-07 | 2011-12-07 | $7700.00 | Window Closed / Lapsed |