US6864500B2
Expired / Lapsed
US
⏱️ 0.0 years remaining
Programmable conductor memory cell structure
Assignee: Ovonyx Memory Technology LLC
•
Filing: 2002-04-10
•
Granted: 2005-03-08
•
Expires: 2022-04-10
Abstract
Abstract In programmable conductor memory cells, metal ions precipitate out of a glass electrolyte element in response to an applied electric field in one direction only, causing a conductive pathway to grow from cathode to anode. The amount of conductive pathway growth, and therefore the programming, depends, in part, on the availability of metal ions. It is important that the metal ions come only from the solid solution of the memory cell body. If additional metal ions are supplied from other sources, such as the sidewall edge at the anode interface, the amount of metal ions may not be directly related to the strength of the electric field, and the programming will not respond consistently from cell to cell. The embodiments described herein provide new and novel structures that block interface diffusion paths for metal ions, leaving diffusion from the bulk glass electrolyte as the only supply of metal ions for conductive pathway formation.
Inventors
- 👤 Terry L. Gilton
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 10:26
CPC Classifications
H; H10; H10N; H10N70/00; H10N70/801; H10N70/881; H10N70/882; H10N70/8825; H10N70/011; H10N70/041; H10N70/046; H10N70/061; H10N70/063; H10N70/066; H10N70/20; H10N70/24; H10N70/245; H10N70/821; H10N70/826; H10N70/841
Claims Analysis
Total Claims: 42
Claim 1
Independent Claim
170 words
A programmable conductor memory cell for an integrated circuit, comprising: a first insulating layer having a top surface and a cell body via; a memory cell body comprising a glass electrolyte with metal ions disposed therein, the memory cell body being contained within the cell body via and defining a sidewall where the memory cell body and the first insulating layer make contact; a cathode in contact with the memory cell body; a second insulating layer over the first insulating layer and defining an anode via to said the memory cell body; an anode in contact with a top surface of the memory cell body and formed in the anode via; wherein the anode contacts the top surface of the memory cell body without contacting the sidewall of the memory cell body, the anode via has a width about the same as a width of the memory cell body, and the anode via is lined with a spacer that covers an edge of the sidewall of the memory cell body.
Claim 2
Dependent Claim
170 words
A programmable conductor memory cell for an integrated circuit, comprising: a first insulating layer having a top surface and a cell body via; a memory cell body comprising a glass electrolyte with metal ions disposed therein, the memory cell body being contained within the cell body via and defining a sidewall where the memory cell body and the first insulating layer make contact; a cathode in contact with the memory cell body; a second insulating layer over the first insulating layer and defining an anode via to said the memory cell body; an anode in contact with a top surface of the memory cell body and formed in the anode via; wherein the anode contacts the top surface of the memory cell body without contacting the sidewall of the memory cell body, the anode via has a width about the same as a width of the memory cell body, and the anode via is lined with a spacer that covers an edge of the sidewall of the memory cell body.
Claim 3
Dependent Claim
15 words
The programmable conductor memory cell of claim 1 wherein the spacer comprises an insulating material.
Claim 4
Dependent Claim
26 words
The programmable conductor memory cell of claim 1 wherein the spacer has a thickness extending into the anode via between about 5 nm and 30 nm.
Claim 5
Dependent Claim
14 words
The programmable conductor memory cell of claim 1 wherein the spacer comprises silicon nitride.
Claim 6
Dependent Claim
16 words
The programmable conductor memory cell of claim 1 wherein the anode via is filled with metal.
Claim 7
Dependent Claim
22 words
The programmable conductor memory cell of claim 5 wherein the metal is contiguous with a metal layer over the second insulating layer.
Claim 8
Dependent Claim
13 words
The programmable conductor memory cell of claim 1 wherein the cathode comprises tungsten.
Claim 9
Dependent Claim
20 words
The programmable conductor memory cell of claim 1 wherein the memory cell body comprises a chalcogenide-metal ion glass electrolyte material.
Claim 10
Dependent Claim
25 words
The programmable conductor memory cell of claim 8 wherein the metal ions are chosen from the group consisting of silver, copper, zinc and combinations thereof.
Claim 11
Dependent Claim
13 words
The programmable conductor memory cell of claim 8 wherein the anode comprises silver.
Claim 12
Dependent Claim
15 words
The programmable conductor memory cell of claim 10 wherein the glass electrolyte material comprises silver-germanium-selenium.
Claim 13
Dependent Claim
31 words
The programmable conductor memory cell of claim 1 wherein a distance between a bottom surface and the top surface of the memory cell body is about 25 nm to 100 nm.
Claim 14
Dependent Claim
24 words
The programmable conductor memory cell of claim 1 wherein a width of the cell body via is between about 100 nm and 500 nm.
Claim 15
Dependent Claim
24 words
The programmable conductor memory cell of claim 1 wherein a width of the cell body via is between about 200 nm and 300 nm.
Claim 16
Dependent Claim
16 words
The programmable conductor memory cell of claim 1 wherein the first insulating layer comprises silicon nitride.
Claim 17
Dependent Claim
23 words
The programmable conductor memory cell of claim 15 wherein the first insulating layer has a thickness between about 10 nm and 200 nm.
Claim 18
Dependent Claim
23 words
The programmable conductor memory cell of claim 15 wherein the first insulating layer has a thickness between about 25 nm and 150 nm.
Claim 19
Dependent Claim
16 words
The programmable conductor memory cell of claim 1 wherein the second insulating layer comprises silicon nitride.
Claim 20
Dependent Claim
23 words
The programmable conductor memory cell of claim 18 wherein the second insulating layer has a thickness between about 50 nm and 200 nm.
Claim 21
Dependent Claim
23 words
The programmable conductor memory cell of claim 18 wherein the second insulating layer has a thickness between about 80 nm and 150 nm.
Claim 22
Dependent Claim
25 words
The programmable conductor memory cell of claim 1 wherein the anode via has a width no greater than a width of the cell body via.
Claim 23
Dependent Claim
19 words
The programmable conductor memory cell of claim 1 , wherein the memory cell body fills the cell body via.
Claim 24
Dependent Claim
29 words
The programmable conductor memory cell of claim 1 , wherein the top surface of the memory cell body is coplanar with the top surface of the first insulating layer.
Claim 25
Dependent Claim
21 words
The programmable conductor memory cell of claim 1 , wherein the cathode extends outside the sidewall of the memory cell body.
Claim 26
Dependent Claim
91 words
A programmable conductor random access memory cell, comprising: a cathode; a first insulating layer over the cathode and defining a via to the cathode; a silver-germanium-selenium glass electrolyte memory cell body in the via and over the cathode, the cathode extending beyond a sidewall of the memory cell body; a second insulating layer over the first insulating layer, having an anode via to the memory cell body; a spacer lining the anode via; and an anode within said the spacer lining the anode via in contact with the memory cell body.
Claim 27
Dependent Claim
91 words
A programmable conductor random access memory cell, comprising: a cathode; a first insulating layer over the cathode and defining a via to the cathode; a silver-germanium-selenium glass electrolyte memory cell body in the via and over the cathode, the cathode extending beyond a sidewall of the memory cell body; a second insulating layer over the first insulating layer, having an anode via to the memory cell body; a spacer lining the anode via; and an anode within said the spacer lining the anode via in contact with the memory cell body.
Claim 28
Dependent Claim
15 words
The programmable conductor memory cell of claim 25 wherein the spacer comprises an insulating material.
Claim 29
Dependent Claim
14 words
The programmable conductor memory cell of claim 26 wherein the spacer comprises silicon nitride.
Claim 30
Dependent Claim
22 words
The programmable conductor memory cell of claim 27 wherein a thickness of the spacer is between about 5 nm and 30 nm.
Claim 31
Dependent Claim
14 words
The programmable conductor memory cell of claim 25 , wherein the anode is silver.
Claim 32
Dependent Claim
33 words
The programmable conductor memory cell of claim 25 , wherein the memory cell body comprises a layer of Ge x Se 10-x , x being about 4, and a layer of silver selenide.
Claim 33
Dependent Claim
96 words
A programmable conductor random access memory cell comprising: an upper insulating layer having an anode via, the anode via having a sidewall; insulating material along the sidewall and narrowing the anode via; an anode contained by the narrowed anode via and overlying the upper insulating layer; a lower insulating layer having a cell body via; and a memory cell body within the cell body via and having a sidewall edge, the anode contacting the memory cell body without contacting the sidewall edge, the memory cell body comprising a germanium selenide layer and a silver selenide layer.
Claim 34
Dependent Claim
96 words
A programmable conductor random access memory cell comprising: an upper insulating layer having an anode via, the anode via having a sidewall; insulating material along the sidewall and narrowing the anode via; an anode contained by the narrowed anode via and overlying the upper insulating layer; a lower insulating layer having a cell body via; and a memory cell body within the cell body via and having a sidewall edge, the anode contacting the memory cell body without contacting the sidewall edge, the memory cell body comprising a germanium selenide layer and a silver selenide layer.
Claim 35
Dependent Claim
73 words
A programmable conductor random access memory cell comprising: an insulating layer; an anode in an anode via through the insulating layer, the anode filling the anode via; and a glass electrolyte element, the anode making contact with only a central portion of an upper surface of the glass electrolyte element, the glass electrolyte element including a layer of Ge x Se 10-x , x being about 4, and a layer of silver selenide.
Claim 36
Dependent Claim
73 words
A programmable conductor random access memory cell comprising: an insulating layer; an anode in an anode via through the insulating layer, the anode filling the anode via; and a glass electrolyte element, the anode making contact with only a central portion of an upper surface of the glass electrolyte element, the glass electrolyte element including a layer of Ge x Se 10-x , x being about 4, and a layer of silver selenide.
Claim 37
Dependent Claim
13 words
The programmable conductor memory cell of claim 32 wherein the anode comprises silver.
Claim 38
Dependent Claim
15 words
The programmable conductor memory cell of claim 32 , wherein the anode is a metal.
Claim 39
Dependent Claim
157 words
A The programmable conductor memory cell for an integrated circuit, comprising: a first insulating layer having a top surface and a cell body via; a memory cell body comprising a glass electrolyte with metal ions disposed therein, the memory cell body being contained within the cell body via and defining a sidewall where the memory cell body and the first insulating layer make contact; a cathode in contact with the memory cell body; a second insulating layer over the first insulating layer and defining an anode via to the memory cell body; an anode in contact with a top surface of the memory cell body and formed in the anode via; wherein the anode contacts the top surface of the memory cell body without contacting the sidewall of the memory cell body, and the memory cell body comprises a layer of Ge x Se 10-x , x being about 4 , and a layer of silver selenide.
Claim 40
Dependent Claim
157 words
A The programmable conductor memory cell for an integrated circuit, comprising: a first insulating layer having a top surface and a cell body via; a memory cell body comprising a glass electrolyte with metal ions disposed therein, the memory cell body being contained within the cell body via and defining a sidewall where the memory cell body and the first insulating layer make contact; a cathode in contact with the memory cell body; a second insulating layer over the first insulating layer and defining an anode via to the memory cell body; an anode in contact with a top surface of the memory cell body and formed in the anode via; wherein the anode contacts the top surface of the memory cell body without contacting the sidewall of the memory cell body, and the memory cell body comprises a layer of Ge x Se 10-x , x being about 4 , and a layer of silver selenide.
Claim 41
Dependent Claim
37 words
The programmable conductor memory cell of claim 35 wherein the anode via is smaller in width than the memory cell body, and a sidewall edge of the memory cell body is covered by the second insulating layer.
Claim 42
Dependent Claim
16 words
The programmable conductor memory cell of claim 35 wherein the second insulating layer comprises silicon nitride.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2008-03-07 | 2008-09-06 | 2009-03-08 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2012-03-07 | 2012-09-06 | 2013-03-08 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2016-03-07 | 2016-09-06 | 2017-03-08 | $7700.00 | Window Closed / Lapsed |