US5219788A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Bilayer metallization cap for photolithography
Assignee: International Business Machines Corp
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Filing: 1991-02-25
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Granted: 1993-06-15
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Expires: 2011-02-25
Abstract
Abstract A process of patterning a conductive layer on a substrate avoiding webbing yet permitting high density patterning places two layers between the resist and the metal. The first layer is an antireflective coating such as titanium nitride applied to the metal. The second layer is a barrier comprising silicon such as sputtered silicon or SiO 2 . The barrier layer may also be a thin coating of spin-on glass. The barrier layer prevents interaction between the TiN and acid groups which are generated during exposure of the resist. With this structure in place the resist is applied, exposed and developed.
Inventors
- 👤 John R. Abernathey
- 👤 Timothy H. Daubenspeck
- 👤 Stephen E. Luce
- 👤 Denis J. Poley
- 👤 Rosemary A. Previti-Kelly
- 👤 Gary P. Viens
- 👤 Jung H. Yoon
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 13:23
CPC Classifications
G; G03; G03F; G03F7/00; G03F7/004; G03F7/09; G03F7/091; Y; Y10; Y10S; Y10S438/00; Y10S438/902; Y10S438/942; Y10S438/948; Y10S438/95; Y10S438/952
Claims Analysis
Total Claims: 22
Claim 1
Independent Claim
127 words
A method for forming a patterned conductive layer comprising the steps of: forming a conductive layer on a surface of a substrate; applying a metal nitride antireflective layer over said conductive layer; forming a barrier layer having a silicon-containing component to said antireflective layer; applying a resist layer to said barrier layer, said resist containing a photoinitiator which generates acid groups upon exposure to radiation, said barrier layer inhibiting interaction between said antireflective layer and said acid groups generated during exposure of said resist; exposing and developing said resist to uncover portions of said barrier layer in an image; and removing said uncovered portions of said barrier layer and corresponding underlying portions of both said antireflective layer and said conductive layer to form a patterned conductive layer.
Claim 2
Independent Claim
127 words
A method for forming a patterned conductive layer comprising the steps of: forming a conductive layer on a surface of a substrate; applying a metal nitride antireflective layer over said conductive layer; forming a barrier layer having a silicon-containing component to said antireflective layer; applying a resist layer to said barrier layer, said resist containing a photoinitiator which generates acid groups upon exposure to radiation, said barrier layer inhibiting interaction between said antireflective layer and said acid groups generated during exposure of said resist; exposing and developing said resist to uncover portions of said barrier layer in an image; and removing said uncovered portions of said barrier layer and corresponding underlying portions of both said antireflective layer and said conductive layer to form a patterned conductive layer.
Claim 3
Dependent Claim
17 words
The method of claim 1 wherein said antireflective layer comprises TiN and said barrier layer is Si.
Claim 4
Dependent Claim
19 words
The method of claim 1 wherein said antireflective layer comprises TiN and said barrier layer is spin on glass.
Claim 5
Dependent Claim
24 words
The method of claim 3 wherein said spin on glass is selected from the group consisting of alkoxysilanes, methyl phenyl silsesquioxane and amino silsesquioxane.
Claim 6
Dependent Claim
27 words
The method of claim 1 wherein said conductive layer comprises a layer of Ti on said substrate and a layer of Al/Cu/Si applied to said Ti layer.
Claim 7
Dependent Claim
12 words
The method of claim 1 wherein said barrier layer comprises silicon dioxide.
Claim 8
Dependent Claim
12 words
The method of claim 1 wherein said barrier layer comprises sputtered silicon.
Claim 9
Dependent Claim
28 words
The method of claim 1 wherein said step of exposing comprises the step of exposing said resist to light of a wavelength sufficient to initiate the photochemical reaction.
Claim 10
Dependent Claim
33 words
The method of claim 1 wherein said conductive layer comprises the steps of sputter coating said substrate with a layer of Ti and sputter coating said Ti layer with a layer of Al/Cu/Si.
Claim 11
Dependent Claim
19 words
The method of claim 1 wherein said antireflective layer comprises TiN and said barrier layer is SiO 2 .
Claim 12
Independent Claim
137 words
A method for patterning a conductive layer comprising the steps of: forming a conductive layer to be patterned on a surface of a substrate; applying a metal nitride antireflective layer over the surface of said conductive layer; forming a barrier layer which includes a silicon-containing component to the surface of said antireflective layer; applying a resist layer to said barrier layer, said resist containing a photoinitiator which generates acid groups upon exposure to radiation, said barrier layer inhibiting interaction between said antireflective layer and said acid groups generated during exposure of said resist; exposing and developing said resist to uncover portions of said barrier layer in a patterned image; removing said uncovered portions of said barrier layer; and removing corresponding underlying portions of both said antireflective layer and said conductive layer to form a patterned conductive layer.
Claim 13
Independent Claim
137 words
A method for patterning a conductive layer comprising the steps of: forming a conductive layer to be patterned on a surface of a substrate; applying a metal nitride antireflective layer over the surface of said conductive layer; forming a barrier layer which includes a silicon-containing component to the surface of said antireflective layer; applying a resist layer to said barrier layer, said resist containing a photoinitiator which generates acid groups upon exposure to radiation, said barrier layer inhibiting interaction between said antireflective layer and said acid groups generated during exposure of said resist; exposing and developing said resist to uncover portions of said barrier layer in a patterned image; removing said uncovered portions of said barrier layer; and removing corresponding underlying portions of both said antireflective layer and said conductive layer to form a patterned conductive layer.
Claim 14
Dependent Claim
17 words
The method of claim 11 wherein said antireflective layer comprises TiN and said barrier layer is Si.
Claim 15
Dependent Claim
19 words
The method of claim 11 wherein said antireflective layer comprises TiN and said barrier layer is spin on glass.
Claim 16
Dependent Claim
24 words
The method of claim 13 wherein said spin on glass is selected from the group consisting of alkoxysilanes, methyl phenyl silsesquioxane and amino silsesquioxane.
Claim 17
Dependent Claim
27 words
The method of claim 11 wherein said conductive layer comprises a layer of Ti on said substrate and a layer of Al/Cu/Si applied to said Ti layer.
Claim 18
Dependent Claim
12 words
The method of claim 11 wherein said barrier layer comprises silicon dioxide.
Claim 19
Dependent Claim
12 words
The method of claim 11 wherein said barrier layer comprises sputtered silicon.
Claim 20
Dependent Claim
28 words
The method of claim 11 wherein said step of exposing comprises the step of exposing said resist to light of a wavelength sufficient to initiate the photochemical reaction.
Claim 21
Dependent Claim
33 words
The method of claim 11 wherein said conductive layer comprises the steps of sputter coating said substrate with a layer of Ti and sputter coating said Ti layer with a layer of Al/Cu/Si.
Claim 22
Dependent Claim
19 words
The method of claim 11 wherein said antireflective layer comprises TiN and said barrier layer is SiO 2 .
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1996-06-14 | 1996-12-14 | 1997-06-15 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2000-06-14 | 2000-12-14 | 2001-06-15 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2004-06-14 | 2004-12-14 | 2005-06-15 | $7700.00 | Window Closed / Lapsed |