US4843443A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Thin film field effect transistor and method of making same
Assignee: Energy Conversion Devices Inc
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Filing: 1988-08-19
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Granted: 1989-06-27
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Expires: 2008-08-19
Abstract
Abstract There is disclosed a film field effect transistor which can be operated at fast switching rates for use, for example, in video display applications. The transistor includes a body of silicon semiconductor material having a structure more ordered than amorphous material and less ordered than single crystalline material. The source and drain of the transistor comprises rectifying contacts formed on the body of silicon semiconductor material. Also disclosed are a method of making the transistor and an electronically addressable array system utilizing the transistor to advantage.
Inventors
- 👤 Stanford R. Ovshinsky
- 👤 Stephen J. Hudgens
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-08 04:56
CPC Classifications
H; H10; H10D; H10D86/00; H10D86/40; H10D30/00; H10D30/01; H10D30/021; H10D30/031; H10D30/60; H10D30/67; H10D30/6704; H10D30/6713; H10D30/674; H10D30/6741; H10D30/6743; H10D62/00; H10D62/40; H10D62/80; H10D62/83; H10D62/832; H10D64/00; H10D64/60; H10D64/64; H10D64/647; H10D86/60; H10P; H10P95/00; H10P95/90
Claims Analysis
Total Claims: 21
Claim 1
Independent Claim
72 words
A thin film field effect transistor comprising: a body of semiconductor material including at least silicon, said semiconductor material being formed with a structure more ordered than amorphous silicon semiconductor material and less ordered than single crystalline silicon semiconductor material; a source and a drain operatively disposed in rectifying contact with said body of semiconductor material; and a gate electrode operatively disposed adjacent to and insulated from said body of semiconductor material.
Claim 2
Dependent Claim
72 words
A thin film field effect transistor comprising: a body of semiconductor material including at least silicon, said semiconductor material being formed with a structure more ordered than amorphous silicon semiconductor material and less ordered than single crystalline silicon semiconductor material; a source and a drain operatively disposed in rectifying contact with said body of semiconductor material; and a gate electrode operatively disposed adjacent to and insulated from said body of semiconductor material.
Claim 3
Dependent Claim
14 words
A transistor as defined in Claim 1 wherein the semiconductor material further includes hydrogen.
Claim 4
Dependent Claim
14 words
A transistor as defined in claim 2 wherein the semiconductor material further includes fluorine.
Claim 5
Dependent Claim
29 words
A transistor as defined in claim 1 wherein the source and drain include a doped semiconductor in at least two spaced apart regions on the body of semiconductor material.
Claim 6
Dependent Claim
16 words
A transistor as defined in claim 4 wherein the doped semiconductor comprises an amorphous semiconductor alloy.
Claim 7
Dependent Claim
14 words
A transistor as defined in claim 5 wherein the amorphous semiconductor alloy includes silicon.
Claim 8
Dependent Claim
14 words
A transistor as defined in claim 6 wherein the amorphous silicon alloy includes hydrogen.
Claim 9
Dependent Claim
14 words
A transistor as defined in claim 7 wherein the amorphous silicon alloy includes hydrogen.
Claim 10
Dependent Claim
13 words
A transistor as defined in claim 4 wherein the doped semiconductor is n-type.
Claim 11
Dependent Claim
13 words
A transistor as defined in claim 9 wherein the doped semiconductor includes phosphorus.
Claim 12
Dependent Claim
25 words
A transistor as defined in claim 1 further including forming an insulative layer operative disposed between the gate electrode and the body of semiconductor material.
Claim 13
Dependent Claim
19 words
A method as defined in claim 11 wherein the insulative layer is formed from silicon oxide or silicon nitride.
Claim 14
Dependent Claim
16 words
A transistor as defined in claim 1 wherein the semiconductor material is about 1 micron thick.
Claim 15
Dependent Claim
16 words
A transistor as defined in claim 1 wherein the gate electrode is formed from a metal.
Claim 16
Dependent Claim
14 words
A transistor as defined in claim 13 wherein the metal is chromium or aluminum.
Claim 17
Dependent Claim
33 words
A transistor as defined in claim 1 wherein the source and drain include a metal formed on at least two spaced apart regions and operatively disposed relative to the body of semiconductor material.
Claim 18
Dependent Claim
28 words
A transistor as defined in claim 16 wherein the body of semiconductor material is formed to be n-type and wherein the metal is a high work function metal.
Claim 19
Dependent Claim
18 words
A transistor as defined in claim 17 wherein the high work function metal is either platinum or palladium.
Claim 20
Dependent Claim
28 words
A transistor as defined in claim 16 wherein the body of semiconductor material is formed to be p-type and wherein the metal is a low work functional metal.
Claim 21
Dependent Claim
17 words
A transistor as defined in claim 19 wherein the low work function metal is magnesium or ytterbium.
References Cited (Backward Citations)
US4470060A
Cited
US4668968A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1992-06-26 | 1992-12-26 | 1993-06-27 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1996-06-26 | 1996-12-26 | 1997-06-27 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2000-06-26 | 2000-12-26 | 2001-06-27 | $7700.00 | Window Closed / Lapsed |