US4668968A
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Integrated circuit compatible thin film field effect transistor and method of making same
Assignee: Energy Conversion Devices Inc
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Filing: 1984-05-14
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Granted: 1987-05-26
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Expires: 2004-05-14
Abstract
Abstract There is disclosed integrated circuit compatible thin film field effect transistors which can be fabricated at low temperatures and operated at fast switching rates for use, for example, in video rate applications. The transistors include a body of germanium semiconductor material having a structure more ordered than amorphous material and less ordered than single crystalline material. The source and drain of the transistors comprises rectifying contacts formed on or in the body of germanium semiconductor material. Also disclosed are a method of making the transistors and an electronically addressable array system utilizing the transistors to advantage.
Inventors
- 👤 Stanford R. Ovshinsky
- 👤 Stephen J. Hudgens
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 15:30
CPC Classifications
H; H10; H10D; H10D30/00; H10D30/60; H10D30/67; H10D30/674; H10D30/6741; H10D62/00; H10D62/80; H10D62/83; H10D62/832
Claims Analysis
Total Claims: 33
Claim 1
Independent Claim
84 words
An integrated circuit compatible thin film field effect transistor comprising: a body of semiconductor material, said body including a single semiconductor element, said semiconductor element being germanium, said germanium semiconductor material having a structure more ordered than amorphous germanium semiconductor material and less ordered than single crystalline germanium semiconductor material; source and drain electrodes of amorphous semiconductor material providing forming rectifying contacts with said body of germanium semiconductor material; and a gate electrode adjacent to and insulated from said body of germanium semiconductor material.
Claim 2
Dependent Claim
84 words
An integrated circuit compatible thin film field effect transistor comprising: a body of semiconductor material, said body including a single semiconductor element, said semiconductor element being germanium, said germanium semiconductor material having a structure more ordered than amorphous germanium semiconductor material and less ordered than single crystalline germanium semiconductor material; source and drain electrodes of amorphous semiconductor material providing forming rectifying contacts with said body of germanium semiconductor material; and a gate electrode adjacent to and insulated from said body of germanium semiconductor material.
Claim 3
Dependent Claim
26 words
A thin film field effect transistor as defined in claim 1 wherein said source and drain electrodes are formed on said body of germanium semiconductor material.
Claim 4
Dependent Claim
30 words
A thin film field effect transistor as defined in claim 2 wherein said source and drain electrodes comprise deposits of a doped semiconductor on said body of germanium semiconductor material.
Claim 5
Dependent Claim
18 words
A thin film field effect transistor as defined in claim 3 wherein said amorphous semiconductor alloy includes silicon.
Claim 6
Dependent Claim
18 words
A thin film field effect transistor as defined in claim 4 wherein said amorphous silicon alloy, includes hydrogen.
Claim 7
Dependent Claim
18 words
A thin film field effect transistor as defined in claim 4 wherein said amorphous silicon alloy includes fluorine.
Claim 8
Dependent Claim
26 words
A thin film field effect transistor as defined in claim 3 wherein said body of germanium semiconductor material is p-type and said doped semiconductor is n-type.
Claim 9
Dependent Claim
17 words
A thin film field effect transistor as defined in claim 7 wherein said doped semiconductor includes phosphorus.
Claim 10
Dependent Claim
26 words
A thin film field effect transistor as defined in claim 3 wherein said body of germanium semiconductor material is n-type and said doped semiconductor is p-type.
Claim 11
Dependent Claim
21 words
A thin film field effect transistor as defined in claim 1 wherein said body of germanium semiconductor material further includes hydrogen.
Claim 12
Dependent Claim
21 words
A thin film field effect transistor as defined in claim 1 wherein said body of germanium semiconductor material further includes fluorine.
Claim 13
Dependent Claim
28 words
A thin film field effect transistor as defined in claim 1 further including an insulative layer disposed between said gate electrode and said body of germanium semiconductor material.
Claim 14
Dependent Claim
23 words
A thin film field effect transistor as defined in claim 12 wherein said insulative layer is formed from silicon oxide or silicon nitride.
Claim 15
Dependent Claim
20 words
A thin film field effect transistor as defined in claim 1 wherein said gate electrode is formed from a metal.
Claim 16
Dependent Claim
18 words
A thin film field effect transistor as defined in claim 14 wherein said metal is chromium or aluminum.
Claim 17
Independent Claim
196 words
A system for selectively addressing each element of an array of elements, said system comprising: a first set of address lines; a second set of address lines spaced from and crossing at an angle to said first set of address lines to form a plurality of crossover points therewith; each said crossover point being associated with a given one of said elements to be addressed; an isolation device associated with each said element to be addressed; and addressing circuitry coupled to said first and second sets of address lines for selectively applying addressing potentials to respective pairs of said first and second sets of address lines, said addressing circuitry including at least one integrated circuit compatible thin film field effect transistor comprising a body of semiconductor material, said body including a single semiconductor element, said semiconductor element being germanium, said germanium semiconductor material having a structure more ordered than amorphous germanium semiconductor material and less ordered than single crystalline germanium semiconductor material, source and drain electrodes formed by amorphous semiconductor material providing rectifying contacts with said body of germanium semiconductor material, and a gate electrode adjacent to and insulated from said body of germanium semiconductor material.
Claim 18
Independent Claim
196 words
A system for selectively addressing each element of an array of elements, said system comprising: a first set of address lines; a second set of address lines spaced from and crossing at an angle to said first set of address lines to form a plurality of crossover points therewith; each said crossover point being associated with a given one of said elements to be addressed; an isolation device associated with each said element to be addressed; and addressing circuitry coupled to said first and second sets of address lines for selectively applying addressing potentials to respective pairs of said first and second sets of address lines, said addressing circuitry including at least one integrated circuit compatible thin film field effect transistor comprising a body of semiconductor material, said body including a single semiconductor element, said semiconductor element being germanium, said germanium semiconductor material having a structure more ordered than amorphous germanium semiconductor material and less ordered than single crystalline germanium semiconductor material, source and drain electrodes formed by amorphous semiconductor material providing rectifying contacts with said body of germanium semiconductor material, and a gate electrode adjacent to and insulated from said body of germanium semiconductor material.
Claim 19
Dependent Claim
29 words
A system as defined in claim 16 wherein said source and drain electrodes of said thin film field effect transistor are formed on said body of germanium semiconductor material.
Claim 20
Dependent Claim
26 words
A system as defined in claim 17 wherein said source and drain electrodes comprise deposits of a doped semiconductor on said body of germanium semiconductor material.
Claim 21
Dependent Claim
14 words
A system as defined in claim 18 wherein said amorphous semiconductor alloy includes silicon.
Claim 22
Dependent Claim
14 words
A system as defined in claim 19 wherein said amorphous silicon alloy includes hydrogen.
Claim 23
Dependent Claim
14 words
A system as defined in claim 19 wherein said amorphous silicon alloy includes fluorine.
Claim 24
Dependent Claim
22 words
A system as defined in claim 18 wherein said body of germanium semiconductor material is p-type and said doped semiconductor is n-type.
Claim 25
Dependent Claim
13 words
A system as defined in claim 22 wherein said doped semiconductor includes phosphorus.
Claim 26
Dependent Claim
22 words
A system as defined in claim 18 wherein said body of germanium semiconductor material is n-type and said doped semiconductor is p-type.
Claim 27
Dependent Claim
24 words
A system as defined in claim 16 wherein said body of germanium semiconductor material of said thin film field effect transistor further includes hydrogen.
Claim 28
Dependent Claim
24 words
A system as defined in claim 16 wherein said body of germanium semiconductor material of said thin film field effect transistor further includes fluorine.
Claim 29
Dependent Claim
31 words
A system as defined in claim 16 wherein said thin film field effect transistor further includes an insulative layer disposed between said gate electrode and said body of germanium semiconductor material.
Claim 30
Dependent Claim
19 words
A system as defined in claim 27 wherein said insulative layer is formed from silicon oxide or silicon nitride.
Claim 31
Dependent Claim
23 words
A system as defined in claim 16 wherein said gate electrode of said thin film field effect transistor is formed from a metal.
Claim 32
Dependent Claim
14 words
A system as defined in claim 29 wherein said metal is chromium or aluminum.
Claim 33
Dependent Claim
22 words
A system as defined in claim 16 wherein said isolation devices comprise thin film field effect transistors including amorhpous semiconductor alloy materials.
References Cited (Backward Citations)
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