US4696758A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Gas mixtures for the vapor deposition of semiconductor material
Assignee: United Solar Systems Corp
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Filing: 1986-10-06
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Granted: 1987-09-29
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Expires: 2006-10-06
Abstract
Abstract Precursor gaseous mixtures from which to glow discharge deposit wide and narrow band gap semiconductor alloy material, said material characterized by improved photoconductivity and stability and improved resistance to photodegradation. There is also specifically disclosed a method of fabricating a narrow band gap semiconductor which method does not suffer from the effects of differential depletion of the components of the precursor gaseous mixture.
Inventors
- 👤 Stanford R. Ovshinsky
- 👤 Subhendu Guha
- 👤 Prem Nath
- 👤 Chi Chung Yang
- 👤 Jeffrey Fournier
- 👤 James Kulman
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 21:05
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/20; H10P14/29; H10P14/2901; H10P14/2922; H10P14/24; H10P14/2923; H10P14/32; H10P14/3202; H10P14/3204; H10P14/3211; H10P14/3242; H10P14/3244; H10P14/3251; H10P14/34; H10P14/3402; H10P14/3404; H10P14/3411; H10P14/3438; H10P14/3441; H10P14/3442; H10P14/3444
Claims Analysis
Total Claims: 10
Claim 1
Independent Claim
93 words
A gaseous precursor mixture from which semiconductor alloy material may be deposited by glow discharge decomposition: said mixture including a polysilane compound and a germanium-containing compound, said compounds capable of decomposing and depositing at substantially similar rates when subjected to electromagnetic energy; and said polysilane compound having the general formula Si x R y H z , where R is chosen from the group consisting essentially of hydrogen, fluorine, chlorine, iodine, bromine and combinations thereof, x is an integer greater than one, y and z are each an integer or zero, and y+z=2x+2.
Claim 2
Dependent Claim
93 words
A gaseous precursor mixture from which semiconductor alloy material may be deposited by glow discharge decomposition: said mixture including a polysilane compound and a germanium-containing compound, said compounds capable of decomposing and depositing at substantially similar rates when subjected to electromagnetic energy; and said polysilane compound having the general formula Si x R y H z , where R is chosen from the group consisting essentially of hydrogen, fluorine, chlorine, iodine, bromine and combinations thereof, x is an integer greater than one, y and z are each an integer or zero, and y+z=2x+2.
Claim 3
Dependent Claim
11 words
A mixture as in claim 1, further including a diluent gas.
Claim 4
Dependent Claim
12 words
A mixture as in claim 2, wherein the diluent gas is hydrogen.
Claim 5
Dependent Claim
14 words
A mixture as in claim 1, further including a gaseous precursor source of fluorine.
Claim 6
Dependent Claim
14 words
A mixture as in claim 4, wherein said source of fluorine is silicon tetrafluoride.
Claim 7
Dependent Claim
15 words
A mixture as in claim 1, wherein said mixture further includes a source of hydrogen.
Claim 8
Dependent Claim
19 words
A mixture as in claim 1, wherein said mixture further includes a gaseous precursor source of a dopant element.
Claim 9
Dependent Claim
12 words
A mixture as in claim 7, wherein said dopant element is phosphorous.
Claim 10
Dependent Claim
12 words
A mixture as in claim 7, wherein said dopant element is boron.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1990-09-28 | 1991-03-30 | 1991-09-29 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1994-09-28 | 1995-03-30 | 1995-09-29 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1998-09-28 | 1999-03-30 | 1999-09-29 | $7700.00 | Window Closed / Lapsed |