US4405656A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Process for producing photoconductive member
Assignee: Canon Inc
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Filing: 1981-10-09
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Granted: 1983-09-20
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Expires: 2001-10-09
Abstract
Abstract A process for producing photoconductive members comprises evacuating a deposition chamber possible to evacuate, to a prescribed degree of vacuum; introducing silicon hydride compound gas, halogen-containing silicon compound gas, and diluent gas in a volume flow ratio of 4-30:2-60:36-81, respectively, into said deposition chamber; forming a gas plasmic atmosphere by generating glow discharge in said surrounding gas mixture; thereby forming, on the surface of a support, for producing the photoconductive member, which has been arranged previously in said deposition chamber, a photoconductive layer constructed of an amorphous material comprising silicon atoms as matrix.
Inventors
- 👤 Isamu Shimizu
- 👤 Kyosuke Ogawa
- 👤 Eiichi Inoue
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-26 09:06
CPC Classifications
H; H10; H10F; H10F71/00; H10F71/10; H10F71/103; C; C23; C23C; C23C16/00; C23C16/22; C23C16/24; G; G03; G03G; G03G5/00; G03G5/02; G03G5/04; G03G5/08; G03G5/082; Y; Y02; Y02E; Y02E10/00; Y02E10/50; Y02P; Y02P70/00; Y02P70/50
Claims Analysis
Total Claims: 14
Claim 1
Independent Claim
94 words
A process for producing photoconductive members which comprises: (a) evacuating a pressure-reducible deposition chamber to reduce the pressure; (b) introducing silicon hydride compound gas, halogen-containing silicon compound gas, and diluent gas in a volume flow ratio of 4-30:2-60:36-81, respectively, into said deposition chamber; (c) forming a gas plasmic atmosphere by generating glow discharge in said surrounding gas mixture; (d) thereby forming, on the surface of a support, for producing the photoconductive member, which has been arranged previously in said deposition chamber, a photoconductive layer constructed of an amorphous material comprising silicon atoms as matrix.
Claim 2
Dependent Claim
94 words
A process for producing photoconductive members which comprises: (a) evacuating a pressure-reducible deposition chamber to reduce the pressure; (b) introducing silicon hydride compound gas, halogen-containing silicon compound gas, and diluent gas in a volume flow ratio of 4-30:2-60:36-81, respectively, into said deposition chamber; (c) forming a gas plasmic atmosphere by generating glow discharge in said surrounding gas mixture; (d) thereby forming, on the surface of a support, for producing the photoconductive member, which has been arranged previously in said deposition chamber, a photoconductive layer constructed of an amorphous material comprising silicon atoms as matrix.
Claim 3
Dependent Claim
17 words
A process for producing photoconductive members of claim 1, wherein said silicon hydride compound is a silane.
Claim 4
Dependent Claim
28 words
A process for producing photoconductive members of claim 2, wherein said silane is at least one member selected from the group consisting of monosilane, disilane, trisilane, and tetrasilane.
Claim 5
Dependent Claim
18 words
A process for producing photoconductive members of claim 1, wherein said halogen-containing silicon compound is a silicon halide.
Claim 6
Dependent Claim
17 words
A process for producing photoconductive members of claim 4, wherein said silicon halide is a silicon fluoride.
Claim 7
Dependent Claim
17 words
A process for producing photoconductive members of claim 1, wherein said diluent gas is a rare gas.
Claim 8
Dependent Claim
16 words
A process for producing photoconductive members of claim 6, wherein said rare gas is argon gas.
Claim 9
Dependent Claim
16 words
A process for producing photoconductive members of claim 1, wherein said diluent gas is hydrogen gas.
Claim 10
Dependent Claim
26 words
A process for producing the photoconductive members of claim 1, wherein a support is kept at 300° C. or higher during formation of the photoconductive members.
Claim 11
Dependent Claim
32 words
A process for producing the photoconductive members of claim 1, wherein a starting material for introducing an impurity is also introduced in the gaseous state into the deposition chamber in step (b).
Claim 12
Dependent Claim
70 words
A process for the producing photoconductive members of claim 10, wherein the starting material for introducing an impurity is at least one selected from the group consisting of PH 3 , P 2 H 4 , PF 3 , PF 5 , PCl 3 , AsH 3 , AsF 3 , AsF 5 , AsCl 3 , SbH 3 , SbF 3 , SbF 5 , and BiH 3 .
Claim 13
Dependent Claim
71 words
A process for producing the photoconductive members of claim 10, wherein the starting material for introducing an impurity is at least one selected from the group consisting of BF 3 , BCl 3 , BBr 3 , B 2 H 6 , B 4 H 10 , B 5 H 9 , B 5 H 11 , B 6 H 10 , B 6 H 12 , and AlCl 3 .
Claim 14
Dependent Claim
62 words
The process of claim 1 including conducting the steps of (i) introducing gaseous material containing sources of silicon and at least one member selected from the group consisting of carbon, nitrogen and oxygen into said chamber under reduced pressure and (ii) causing an electrical discharge in said gaseous material to form an intermediate layer on the substrate, between steps (a) and (b).
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1986-09-19 | 1987-03-21 | 1987-09-20 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1990-09-19 | 1991-03-21 | 1991-09-20 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1994-09-19 | 1995-03-21 | 1995-09-20 | $7700.00 | Window Closed / Lapsed |