US5512328A — Method for forming a pattern and forming a thin f…

Claim 1

Independent Claim 90 words

A pattern formation method comprising the steps of: forming a pattern of a thin film of a seed material coated on a surface of a substrate, wherein a surface hydrophilicity characteristic of said seed material differs from a hydrophilicity characteristic of said substrate surface; depositing an oriented material film on one of said seed material or said substrate surface; and wherein said oriented material film is a Langmuir Blodgett film of a cresol novolak resin having a proportion of p-cresol novolak to m-cresol novolak of at least 20 wt. %.

Claim 2

Dependent Claim 90 words

A pattern formation method comprising the steps of: forming a pattern of a thin film of a seed material coated on a surface of a substrate, wherein a surface hydrophilicity characteristic of said seed material differs from a hydrophilicity characteristic of said substrate surface; depositing an oriented material film on one of said seed material or said substrate surface; and wherein said oriented material film is a Langmuir Blodgett film of a cresol novolak resin having a proportion of p-cresol novolak to m-cresol novolak of at least 20 wt. %.

Claim 3

Dependent Claim 36 words

A pattern formation method according to claim 1, wherein the pattern is formed by exposing the thin film surface with energy beams to form the pattern by selectivity vaporizing and removing portions of the thin film.

Claim 4

Dependent Claim 15 words

A pattern formation method according to claim 2, wherein said seed material is hexamethyl disilazane.

Claim 5

Dependent Claim 41 words

A pattern formation method according to claim 2, wherein said surface of the substrate is hydrophilic and the surface of the thin film is hydrophobic and the oriented material is formed on a region where the thin film has been removed.

Claim 6

Dependent Claim 18 words

A pattern formation method according to claim 3, wherein said hexamethyl disilazane is formed about 1 nm thick.

Claim 7

Dependent Claim 16 words

A pattern formation method according to claim 1, wherein said seed material is a silane coupler.

Claim 8

Dependent Claim 25 words

A pattern formation method according to claim 1, wherein said energy beams are one of ultra-violet rays, X-rays, ion beams, electron beams and gamma rays.

Claim 9

Dependent Claim 22 words

A pattern formation method according to claim 1, wherein said substrate is one of silicon, GaAs, InP, Al and SiO 2 .

Claim 10

Independent Claim 98 words

A method of forming a pattern used in semiconductor lithography, comprising the steps of: coating a substrate with a seed material, said substrate having a hydrophilicity characteristic different from that of said seed material; removing portions of said seed material thereby forming removed and non-removed portions of said seed material; depositing an oriented material on one of said removed and non-removed portions according to said different hydrophilicity characteristics, wherein said oriented material film is a Langmuir Blodgett film of a cresol novolak resin having a proportion of p-cresol novolak to m-cresol novolak of at least 20 wt. %.

Claim 11

Independent Claim 98 words

A method of forming a pattern used in semiconductor lithography, comprising the steps of: coating a substrate with a seed material, said substrate having a hydrophilicity characteristic different from that of said seed material; removing portions of said seed material thereby forming removed and non-removed portions of said seed material; depositing an oriented material on one of said removed and non-removed portions according to said different hydrophilicity characteristics, wherein said oriented material film is a Langmuir Blodgett film of a cresol novolak resin having a proportion of p-cresol novolak to m-cresol novolak of at least 20 wt. %.

Claim 12

Dependent Claim 19 words

A pattern formation method according to claim 9, wherein said removing is performed by vaporizing with an electron beam.

Claim 13

Dependent Claim 15 words

A pattern formation method according to claim 9, wherein said seed material is hexamethyl disilazane.

Claim 14

Dependent Claim 33 words

A pattern formation method according to claim 9, wherein said pattern is formed by exposing said seed material thin film to one of ultra-violet rays, X-rays, ion beams, electron beams and gamma rays.

Claim 15

Dependent Claim 100 words

A pattern formation method used in semiconductor lithography, comprising the steps of: coating a substrate with a seed material, said substrate having a hydrophilicity characteristic different from that of said seed material; forming a pattern by removing portions of said seed material thereby forming removed and non-removed portions of said seed material; depositing an oriented material film on one of said removed and non-removed portions according to said different hydrophilicity characteristics; wherein said oriented material is a Langmuir Blodgett film of a cresol novolak resin having a proportion of p-cresol novolak to m-cresol novolak of at least 20 wt. %.

Claim 16

Dependent Claim 100 words

A pattern formation method used in semiconductor lithography, comprising the steps of: coating a substrate with a seed material, said substrate having a hydrophilicity characteristic different from that of said seed material; forming a pattern by removing portions of said seed material thereby forming removed and non-removed portions of said seed material; depositing an oriented material film on one of said removed and non-removed portions according to said different hydrophilicity characteristics; wherein said oriented material is a Langmuir Blodgett film of a cresol novolak resin having a proportion of p-cresol novolak to m-cresol novolak of at least 20 wt. %.

Claim 17

Independent Claim 119 words

A method of forming a pattern used in semiconductor lithography, comprising the steps of: forming a pattern on a substrate with a seed material, said substrate having a hydrophilicity characteristic different from that of said seed material, said seed material being deposited on said substrate by applying energy beams in a vaccum to the substrate surface in the presence of a material that is decomposed by the energy beams and that deposits on the substrate to form the pattern; depositing on oriented material on one of said substrate and said seed material, wherein said oriented material is one of a normal chain fatty acid, a polymer material silver chloride, sodium chloride, silver selenide, selenium, tellurium and a liquid crystal.

Claim 18

Independent Claim 119 words

A method of forming a pattern used in semiconductor lithography, comprising the steps of: forming a pattern on a substrate with a seed material, said substrate having a hydrophilicity characteristic different from that of said seed material, said seed material being deposited on said substrate by applying energy beams in a vaccum to the substrate surface in the presence of a material that is decomposed by the energy beams and that deposits on the substrate to form the pattern; depositing on oriented material on one of said substrate and said seed material, wherein said oriented material is one of a normal chain fatty acid, a polymer material silver chloride, sodium chloride, silver selenide, selenium, tellurium and a liquid crystal.

Claim 19

Dependent Claim 52 words

A pattern formation method according to claim 14, wherein said energy beams are electron beams, said substrate is silicon having a surface oxide layer that is hydrophilic and said pattern is formed by decomposition of carbon containing compounds to form the pattern with a carbon layer on the substrate that is hydrophobic.

Claim 20

Dependent Claim 25 words

A pattern formation method according to claim 14, wherein said oriented material is said liquid crystal which comprises one of p-azoxyethyl benzoate and p-azoxyethyl cinnamate.

Claim 21

Dependent Claim 99 words

A pattern formation method according to claim 14, wherein in said depositing step a first Langmuir Blodgett film of the oriented material is deposited in a first layer in one hydrophilic/hydrophobic orientation, and then the substrate and the first Langmuir Blodgett film are exposed to ultra-violet radiation or heated sufficiently to create selectivity with respect to deposition on the first Langmuir Blodgett film and the substrate so that in a subsequent depositing step, a second Langmuir Blodgett film of the oriented material having a second hydrophilic/hydrophobic orientation is deposited on the first layer without being deposited on the substrate.

Claim 22

Dependent Claim 62 words

A pattern formation method according to claim 14, wherein in said depositing step a first Langmuir Blodgett film of the oriented material is deposited in a first layer in one hydrophobic orientation, and then a second Langmuir Blodgett film of the oriented material having the same hydrophilic/hydrophobic orientation is deposited on the first Langmuir Blodgett film without being deposited on the substrate.

Claim 23

Dependent Claim 27 words

A pattern formation method according to claim 14, wherein said substrate is one of silicon, GaAs, InP, Al and SiO 2 and said seed material is carbon.

Claim 24

Dependent Claim 19 words

A pattern formation method according to claim 14, wherein said oriented material is fatty acid which contains tricosenoic acid.

Claim 25

Dependent Claim 19 words

A pattern formation method according to claim 14, wherein said oriented material is said polymer material which is polyimide.

Claim 26

Dependent Claim 120 words

A pattern formation method used in semiconductor lithography, comprising the steps of: forming a pattern on a substrate with a seed material, said substrate having a hydrophilicity characteristic different from that of said seed material, said seed material being deposited on said substrate by applying energy beams in a vacuum to the substrate surface in the presence of a material that is decomposed by the energy beams and that deposits on the substrate to form the pattern; depositing an oriented material on one of said substrate and said seed material; wherein said oriented material film is a Langmuir Blodgett film of a cresol novolak resin having a proportion of p-cresol novolak to m-cresol novolak of at least 20 wt. %.

Claim 27

Dependent Claim 120 words

A pattern formation method used in semiconductor lithography, comprising the steps of: forming a pattern on a substrate with a seed material, said substrate having a hydrophilicity characteristic different from that of said seed material, said seed material being deposited on said substrate by applying energy beams in a vacuum to the substrate surface in the presence of a material that is decomposed by the energy beams and that deposits on the substrate to form the pattern; depositing an oriented material on one of said substrate and said seed material; wherein said oriented material film is a Langmuir Blodgett film of a cresol novolak resin having a proportion of p-cresol novolak to m-cresol novolak of at least 20 wt. %.

Annuity Stage	Window Opens	Payment Deadline	Surcharge Period Until	Estimated Fee	Status
3.5 Years (Year 4)	1999-04-30	1999-10-30	2000-04-30	$2000.00	Window Closed / Lapsed
7.5 Years (Year 8)	2003-04-30	2003-10-30	2004-04-30	$3760.00	Window Closed / Lapsed
11.5 Years (Year 12)	2007-04-30	2007-10-30	2008-04-30	$7700.00	Window Closed / Lapsed

Method for forming a pattern and forming a thin film used in pattern formation

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