US6316784B1
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of making chalcogenide memory device
Assignee: Round Rock Research LLC
•
Filing: 1998-03-12
•
Granted: 2001-11-13
•
Expires: 2018-03-12
Abstract
Abstract A method for fabricating chalcogenide memories in which ultra-small pores are formed in insulative layers using disposable spacers. The chalcogenide memory elements are positioned within the ultra-small pores. The chalcogenide memory elements thus defined have minimum lateral dimensions ranging from approximately 500 to 4000 Angstroms.
Inventors
- 👤 Russell C. Zahorik
- 👤 Alan R. Reinberg
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 10:39
CPC Classifications
H; H10; H10D; H10D48/00; H10D48/30; H10D48/32; H10D48/366; H10N; H10N70/00; H10N70/011; H10N70/061; H10N70/066; H10N70/068; H10N70/20; H10N70/231; H10N70/801; H10N70/821; H10N70/826; H10N70/881; H10N70/882; H10N70/8828
Claims Analysis
Total Claims: 12
Claim 1
Independent Claim
54 words
A microelectronic structure comprising: a substrate; a first dielectric layer disposed on the substrate, the first dielectric layer having an aperture therein; a second dielectric material disposed only within the aperture, the second dielectric material having a pore therein exposing a portion of the substrate; and a spacer disposed above the second dielectric material.
Claim 2
Dependent Claim
54 words
A microelectronic structure comprising: a substrate; a first dielectric layer disposed on the substrate, the first dielectric layer having an aperture therein; a second dielectric material disposed only within the aperture, the second dielectric material having a pore therein exposing a portion of the substrate; and a spacer disposed above the second dielectric material.
Claim 3
Dependent Claim
16 words
The structure, as set forth in claim 1 , wherein the substrate comprises a conductive material.
Claim 4
Dependent Claim
16 words
The structure, as set forth in claim 1 , wherein the first dielectric layer comprises oxide.
Claim 5
Dependent Claim
17 words
The structure, as set forth in claim 1 , wherein the first dielectric layer comprises TEOS oxide.
Claim 6
Dependent Claim
17 words
The structure, as set forth in claim 1 , wherein the second dielectric material comprises silicon nitride.
Claim 7
Dependent Claim
14 words
The structure, as set forth in claim 1 , wherein the spacer comprises polysilicon.
Claim 8
Dependent Claim
19 words
The structure, as set forth in claim 1 , wherein the spacer and second dielectric material have equal widths.
Claim 9
Dependent Claim
18 words
The structure, as set forth in claim 1 , comprising a chalcogenide memory element disposed within the pore.
Claim 10
Dependent Claim
45 words
The structure, as set forth in claim 8 , wherein the chalcogenide memory element comprises: a first conductive layer disposed over the substrate; a layer of chalcogenide material disposed over the first conductive layer; and a second conductive layer disposed over the layer of chalcogenide.
Claim 11
Dependent Claim
20 words
The structure, as set forth in claim 8 , comprising a third dielectric layer disposed over the chalcogenide memory element.
Claim 12
Dependent Claim
60 words
The structure, as set forth in claim 9 , wherein: the first conductive layer includes a first portion disposed over the spacer; the layer of chalcogenide material includes a first portion disposed over the first portion of the first conductive layer; and the second conductive layer includes a first portion disposed over the first portion of the layer of chalcogenide.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2004-11-12 | 2005-05-14 | 2005-11-13 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2008-11-12 | 2009-05-14 | 2009-11-13 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2012-11-12 | 2013-05-14 | 2013-11-13 | $7700.00 | Window Closed / Lapsed |