Patent US3532564A successfully refreshed from Google Patents.
US4320191A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Pattern-forming process
Assignee: NTT Inc
•
Filing: 1979-11-01
•
Granted: 1982-03-16
•
Expires: 1999-11-01
Abstract
Abstract This invention relates to a pattern-forming process using a radiation sensitive chalcogenide layer composed of a laminate of amorphous chalcogenide layer (2) and thin silver layer (3), and discloses a pattern-forming process characterized by etching out an amorphous chalcogenide layer (22) not doped with silver at an unexposed area under an irradiation of a light (6) or an accelerated corpuscular beam by a plasma etching with a fluorine-series gas and also a pattern-forming process wherein silver-doped amorphous chalcogenide layer (21) left on the substrate according to a given pattern by the above process is used as an etching mask and then the substrate layer (1c) is etched out by a plasma etching to form the given pattern on the substrate.
Inventors
- 👤 Akira Yoshikawa
- 👤 Osamu Ochi
- 👤 Tomoko Hisaki
- 👤 Yoshihiko Mizushima
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-28 05:05
CPC Classifications
G; G03; G03C; G03C1/00; G03C1/705; G03C5/00; G03C5/56; G03F; G03F1/00; G03F7/00; G03F7/004; G03F7/0042; G03F7/0044; H; H10; H10P; H10P50/00; H10P50/20; H10P50/28; H10P50/282; H10P50/283; H10P14/00; H10P14/60; H10P14/63; H10P14/6302; H10P14/6304; H10P14/6306; H10P14/6308; H10P14/6309; H10P14/6322; H10P14/69; H10P14/692; H10P14/6921; H10P14/69215
Claims Analysis
Total Claims: 4
Claim 1
Independent Claim
88 words
A pattern-forming process, comprising the steps of exposing a radiation sensitive chalcogenide layer consisting of an amorphous chalcogenide layer and a thin silver layer successively superimposed on a substrate to a light or an accelerated corpuscular beam according to a given pattern to form silver-doped regions in the amorphous chalcogenide layer at exposed areas, and then etching out the amorphous chalcogenide layer not doped with silver in an etching stage with gas plasma to leave only silver-doped amorphous chalcogenide layer on the substrate according to the given pattern.
Claim 2
Dependent Claim
88 words
A pattern-forming process, comprising the steps of exposing a radiation sensitive chalcogenide layer consisting of an amorphous chalcogenide layer and a thin silver layer successively superimposed on a substrate to a light or an accelerated corpuscular beam according to a given pattern to form silver-doped regions in the amorphous chalcogenide layer at exposed areas, and then etching out the amorphous chalcogenide layer not doped with silver in an etching stage with gas plasma to leave only silver-doped amorphous chalcogenide layer on the substrate according to the given pattern.
Claim 3
Dependent Claim
112 words
A pattern-forming process, comprising the steps of forming on a substrate a radiation sensitive chalcogenide layer consisting of an amorphous chalcogenide layer and a thin silver layer superimposed thereon, exposing it to a light or an accelerated corpuscular beam according to a given pattern to form silver-doped regions in the amorphous chalcogenide layer at exposed areas, etching out the amorphous chalcogenide layer not doped with silver in an etching stage with gas plasma, etching the substrate to a given depth at the areas not covered with the silver-doped amorphous chalcogenide layer as a mask by gas plasma etching, and then etching out the mask to form the given pattern on the substrate.
Claim 4
Dependent Claim
112 words
A pattern-forming process, comprising the steps of forming on a substrate a radiation sensitive chalcogenide layer consisting of an amorphous chalcogenide layer and a thin silver layer superimposed thereon, exposing it to a light or an accelerated corpuscular beam according to a given pattern to form silver-doped regions in the amorphous chalcogenide layer at exposed areas, etching out the amorphous chalcogenide layer not doped with silver in an etching stage with gas plasma, etching the substrate to a given depth at the areas not covered with the silver-doped amorphous chalcogenide layer as a mask by gas plasma etching, and then etching out the mask to form the given pattern on the substrate.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1985-03-15 | 1985-09-14 | 1986-03-16 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1989-03-15 | 1989-09-14 | 1990-03-16 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1993-03-15 | 1993-09-14 | 1994-03-16 | $7700.00 | Window Closed / Lapsed |