US5315131A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Electrically reprogrammable nonvolatile memory device
Assignee: Panasonic Holdings Corp
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Filing: 1991-11-21
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Granted: 1994-05-24
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Expires: 2011-11-21
Abstract
Abstract An electrically plastic device comprising an amorphous silicon semiconductor layer including movable dopant formed between a pair of electrodes and; at least one gate electrode formed on said amorphous silicon semiconductor layer through an insulation layer or a high resistance layer; whereby the operation of said gate electrode controls the dopant distribution of said amorphous semiconductor layer, thereby varying the electrical conductivity thereof.
Inventors
- 👤 Yoshio Kishimoto
- 👤 Masaaki Suzuki
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 18:58
CPC Classifications
H; H10; H10D; H10D30/00; H10D30/60; G; G06; G06N; G06N3/00; G06N3/02; G06N3/06; G06N3/063; G06N3/065; H10D62/00; H10D62/40; H10D62/402; H10D62/80; H10D62/83; G11; G11C; G11C13/00; G11C13/0002; G11C13/0004
Claims Analysis
Total Claims: 15
Claim 1
Independent Claim
138 words
An electrically plastic device comprising: a pair of electrodes; an amorphous silicon semiconductor layer comprising a movable dopant support layer for imparting the electronic conductivity of said amorphous silicon semiconductor layer, said amorphous silicon semiconductor layer formed between said pair of electrodes; said movable dopant support layer comprising at least one element selected from the group consisting of an alkali ion conductor based on β-aluminum oxide, a redox ion conductor including Ag + or Cu + , and a porous ceramic; an insulating layer formed on said amorphous silicon semiconductor layer; and at least one gate electrode formed on said insulating layer for applying an electric field to control the dopant distribution of said amorphous semiconductor layer; whereby the electronic conductivity of said amorphous semiconductor layer is variable by controlling the dopant distribution of said amorphous semiconductor layer.
Claim 2
Dependent Claim
138 words
An electrically plastic device comprising: a pair of electrodes; an amorphous silicon semiconductor layer comprising a movable dopant support layer for imparting the electronic conductivity of said amorphous silicon semiconductor layer, said amorphous silicon semiconductor layer formed between said pair of electrodes; said movable dopant support layer comprising at least one element selected from the group consisting of an alkali ion conductor based on β-aluminum oxide, a redox ion conductor including Ag + or Cu + , and a porous ceramic; an insulating layer formed on said amorphous silicon semiconductor layer; and at least one gate electrode formed on said insulating layer for applying an electric field to control the dopant distribution of said amorphous semiconductor layer; whereby the electronic conductivity of said amorphous semiconductor layer is variable by controlling the dopant distribution of said amorphous semiconductor layer.
Claim 3
Dependent Claim
40 words
An electrically plastic device according to claim 1, wherein said pair of electrodes and amorphous silicon semiconductor layer are formed on a substrate composed of an ion-conductive glass or ceramic plate, said substrate acting as said movable dopant support layer.
Claim 4
Dependent Claim
28 words
An electrically plastic device according to claim 2, wherein a dopant permeable separation layer is interposed between said amorphous silicon semiconductor layer and said movable dopant supporting layer.
Claim 5
Dependent Claim
15 words
The electrically plastic device of claim 1, wherein said insulating layer comprises a high-resistance layer.
Claim 6
Dependent Claim
154 words
An electrically plastic device comprising: an ion conductive substrate comprising a movable dopant support layer; said movable dopant support layer comprising at least one element selected from the group consisting of an alkali ion conductor based on β-aluminum oxide, a redox ion conductor including Ag + or Cu + , and a porous ceramic; a pair of electrodes formed on said ion conductive substrate; an amorphous silicon semiconductor layer formed on said ion conductive substrate so as to contact said pair of electrodes; an insulating layer formed on said amorphous silicon semiconductor layer and between said pair of electrodes; and at least one gate electrode formed on said insulating layer for applying an electric field to control the flow of ions between said ion conductive substrate and said amorphous silicon semiconductor layer; whereby the resistance of said amorphous silicon semiconductor layer is variable by controlling the ion content of said amorphous silicon semiconductor layer.
Claim 7
Dependent Claim
154 words
An electrically plastic device comprising: an ion conductive substrate comprising a movable dopant support layer; said movable dopant support layer comprising at least one element selected from the group consisting of an alkali ion conductor based on β-aluminum oxide, a redox ion conductor including Ag + or Cu + , and a porous ceramic; a pair of electrodes formed on said ion conductive substrate; an amorphous silicon semiconductor layer formed on said ion conductive substrate so as to contact said pair of electrodes; an insulating layer formed on said amorphous silicon semiconductor layer and between said pair of electrodes; and at least one gate electrode formed on said insulating layer for applying an electric field to control the flow of ions between said ion conductive substrate and said amorphous silicon semiconductor layer; whereby the resistance of said amorphous silicon semiconductor layer is variable by controlling the ion content of said amorphous silicon semiconductor layer.
Claim 8
Dependent Claim
18 words
The electrically plastic device of claim 5, wherein said ion conductive substrate comprises ion-conductive glass or ceramic plate.
Claim 9
Dependent Claim
26 words
The electrically plastic device of claim 5, further comprising a dopant permeable separation layer interposed between said amorphous silicon semiconductor layer and said ion conductive substrate.
Claim 10
Dependent Claim
15 words
The electrically plastic device of claim 5, wherein said insulting layer comprises a high-resistance layer.
Claim 11
Dependent Claim
149 words
An electrically plastic device comprising: a substrate; a movable dopant supporting layer formed on said substrate; said movable dopant support layer comprising at least one element selected from the group consisting of an alkali ion conductor based on β-aluminum oxide, a redox ion conductor including Ag + or Cu + , and a porous ceramic; an amorphous silicon semiconductor layer formed on said movable dopant layer; a pair of electrodes formed on said amorphous silicon semiconductor layer; an insulating layer formed on said amorphous silicon semiconductor layer and between said pair of electrodes; and at least one gate electrode formed on said insulating layer for applying an electric field to control the flow of ions between said movable dopant supporting layer and said amorphous silicon semiconductor layer; whereby the resistance of said amorphous silicon semiconductor layer is variable by controlling the ion content of said amorphous silicon semiconductor layer.
Claim 12
Dependent Claim
149 words
An electrically plastic device comprising: a substrate; a movable dopant supporting layer formed on said substrate; said movable dopant support layer comprising at least one element selected from the group consisting of an alkali ion conductor based on β-aluminum oxide, a redox ion conductor including Ag + or Cu + , and a porous ceramic; an amorphous silicon semiconductor layer formed on said movable dopant layer; a pair of electrodes formed on said amorphous silicon semiconductor layer; an insulating layer formed on said amorphous silicon semiconductor layer and between said pair of electrodes; and at least one gate electrode formed on said insulating layer for applying an electric field to control the flow of ions between said movable dopant supporting layer and said amorphous silicon semiconductor layer; whereby the resistance of said amorphous silicon semiconductor layer is variable by controlling the ion content of said amorphous silicon semiconductor layer.
Claim 13
Dependent Claim
20 words
The electrically plastic device of claim 8, wherein said movable dopant supporting layer comprises ion-conductive glass or ceramic thin film.
Claim 14
Dependent Claim
27 words
The electrically plastic device of claim 9, further comprising a dopant permeable separation layer interposed between said amorphous silicon semiconductor layer and said movable dopant supporting layer.
Claim 15
Dependent Claim
15 words
The electrically plastic device of claim 9, wherein said insulating layer comprises a high-resistance layer.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1997-05-23 | 1997-11-22 | 1998-05-24 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2001-05-23 | 2001-11-22 | 2002-05-24 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2005-05-23 | 2005-11-22 | 2006-05-24 | $7700.00 | Window Closed / Lapsed |