US4728406A
Expired / Lapsed
US
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Method for plasma - coating a semiconductor body
Assignee: United Solar Systems Corp
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Filing: 1986-08-18
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Granted: 1988-03-01
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Expires: 2006-08-18
Abstract
Abstract A method for the plasma coating of a layer of material atop a semiconductor body, said method and apparatus adapted to substantially prevent damage to the semiconductor body by energetic vaporized species developed during the coating process. The invention has particular utility in the high volume fabrication of thin film semiconductor devices and may be readily adapted to provide the transparent conductive electrode of photoresponsive devices in a continuous roll-to-roll deposition process.
Inventors
- 👤 Arindam Banerjee
- 👤 Prem Nath
- 👤 Herbert C. Ovshinsky
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 09:46
CPC Classifications
C; C23; C23C; C23C14/00; C23C14/02; C23C14/024; C23C14/025; C23C14/22; C23C14/56; C23C14/562
Claims Analysis
Total Claims: 17
Claim 1
Independent Claim
172 words
A method of manufacturing a semiconductor device of the type including a layer of transparent, electrically conductive material in electrical communication with and in superposed relationship to a body of semiconductor material; said method including the steps of: providing said semiconductor body; depositing said layer of transparent conductive material in a two step process; the first step of the two step process comprises: depositing a layer of protective transparent conductive material atop the body of semiconductor material by a first set of deposition parameters, said protective material adapted to substantially prevent damage to the semiconductor body by energetic vaporized species developed during th esubsequent sputtering deposition of transparent conductive material; and the second step of said two step process comprises: sputtering said transparent, conductive material atop the layer of protective material; said sputtering step differing in at least one material deposition parameter from the deposition parameters of said first set, whereby the transparent conductive material is coated upon the semiconductor body at a high rate of deposition without damaging said semiconductory body.
Claim 2
Independent Claim
172 words
A method of manufacturing a semiconductor device of the type including a layer of transparent, electrically conductive material in electrical communication with and in superposed relationship to a body of semiconductor material; said method including the steps of: providing said semiconductor body; depositing said layer of transparent conductive material in a two step process; the first step of the two step process comprises: depositing a layer of protective transparent conductive material atop the body of semiconductor material by a first set of deposition parameters, said protective material adapted to substantially prevent damage to the semiconductor body by energetic vaporized species developed during th esubsequent sputtering deposition of transparent conductive material; and the second step of said two step process comprises: sputtering said transparent, conductive material atop the layer of protective material; said sputtering step differing in at least one material deposition parameter from the deposition parameters of said first set, whereby the transparent conductive material is coated upon the semiconductor body at a high rate of deposition without damaging said semiconductory body.
Claim 3
Dependent Claim
30 words
A method as in claim 1, wherein the first step of providing protective material includes: providing means adapted to minimize energetic impact of preselected ionic species upon the semiconductor body.
Claim 4
Dependent Claim
62 words
A method as in claim 2, wherein: the second step of sputtering said layer of transparent, conductive material includes providing an energized sputtering target spacedly separated from the semiconductor body, said target and said body defining a vapor zone therebetween; and the first step of providing means adapted to minimize ionic impact includes disposing an electrically biased member in the vapor zone.
Claim 5
Dependent Claim
25 words
A method as in claim 3, including the further step of positively biasing said member, whereby the energetic impact of negatively charged ions is minimized.
Claim 6
Dependent Claim
27 words
A method as in claim 4, wherein the step of positively biasing said member includes maintaining said biased member at a potential of +50 to +100 volts.
Claim 7
Dependent Claim
25 words
A method as in claim 3, wherein the first step of disposing an electrically biased member comprises disposing a screen-like member in the vapor zone.
Claim 8
Dependent Claim
25 words
A method as in claim 3, wherein the first step of disposing an electrically biased member comprises disposing a ring-like member in the vapor zone.
Claim 9
Dependent Claim
56 words
A method as in claim 2, wherein the second step of sputtering said layer of transparent, conductive material comprises sputtering a layer of a conductive metallic oxide material; and the first step of providing means adapted to minimize ionic impact, includes providing means adapted to minimize the energetic impact of oxygen ions upon said semiconductor body.
Claim 10
Dependent Claim
19 words
A method as in claim 1, wherein the first step of providing said protective layer comprises evaporating said layer.
Claim 11
Dependent Claim
27 words
A method as in claim 1, wherein the first step of providing said protective layer comprises sputtering said layer in a low energy, low deposition rate process.
Claim 12
Dependent Claim
27 words
A method as in claim 1, wherein the first the step of providing said protective layer comprises depositing said protective layer by a plasma glow discharge process.
Claim 13
Dependent Claim
25 words
A method as in claim 1, wherein the first step of providing said protective layer comprises depositing said layer by a chemical vapor deposition process.
Claim 14
Dependent Claim
41 words
A method as in claim 1, wherein the first step of depositing said protective layer comprises depositing, in a process which does not damage the semiconductor body, a thin layer of said transparent conductive material prior to sputtering the remainder thereof.
Claim 15
Dependent Claim
41 words
A method as in claim 13, wherein the step of depositing said protective layer further comprises depositing at least 20 angstroms of a transparent conductive oxide prior to the sputtering deposition of the remainder of the layer of transparent conductive material.
Claim 16
Dependent Claim
41 words
A method as in claim 1, including the further step of selecting said protective material from the group consisting essentially of: indium oxide, tin oxide, indium tin oxide, cadmium oxide, cadmium stannate, zinc oxide, magnesium fluoride, silicon carbide, and combinations thereof.
Claim 17
Dependent Claim
76 words
A method as in claim 1, wherein the step of providing the semiconductor body includes providing the semiconductor body upon an elongated, flexible web of substrate material; and the step of sputtering the transparent, conductive layer includes the further steps of: providing a sputtering apparatus having at least one plasma coating station therein, and continuously advancing said web through said sputtering apparatus whereby the transparent conductive layer is continuously deposited atop the layer of protective material.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1991-03-01 | 1991-08-31 | 1992-03-01 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1995-03-01 | 1995-08-31 | 1996-03-01 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1999-03-01 | 1999-08-31 | 2000-03-01 | $7700.00 | Window Closed / Lapsed |