Abstract This invention is concerned with a ferroelectric photoconductive optical storage, comprising a sandwich arrangement constituted by a plurality of alternating ferroelectric and photoconductive layers enclosed between a pair of transmissive layer electrodes. The material of the ferroelectric layers is selected from bismuth titanate, the electrode material from SnO 2 or InO 2 , the layer thickness of the first is about 2μ and of the latter between 200 and 300 A, whereas the photoconductive layers, the material of which is selected from CdS, is about 1μ. The layers are produced by sputtering. Such a multi-layer storage ensures a diffraction effectivity of about 10 percent and a resolution of 500 lines per millimeter when phase reading is employed at a wavelength of λ= 6000 A.
A ferroelectric photoconductor optical storage comprising a pair of transmissive electrodes a sandwich parcel constituted of an alternating arrangement of ferroelectric layers and photoconductive layers, said pair of transmissive electrodes enclosing said sandwich parcel and being oppositely located relative to photoconductive layers out of said alternating arrangement, said ferroelectric layers being selected from bismuth titanate.
Claim 2
Dependent Claim
55 words
A ferroelectric photoconductor optical storage comprising a pair of transmissive electrodes a sandwich parcel constituted of an alternating arrangement of ferroelectric layers and photoconductive layers, said pair of transmissive electrodes enclosing said sandwich parcel and being oppositely located relative to photoconductive layers out of said alternating arrangement, said ferroelectric layers being selected from bismuth titanate.