US4177474A
Expired / Lapsed
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High temperature amorphous semiconductor member and method of making the same
Assignee: Energy Conversion Devices Inc
•
Filing: 1977-10-12
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Granted: 1979-12-04
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Expires: 1997-10-12
Abstract
Abstract An amorphous semiconductor member which is capable of withstanding high temperatures and of having good toughness characteristics comprises an amorphous semiconductor material including a composition of a plurality elements, at least one of which is a low atomic weight element comprising boron, carbon, nitrogen or oxygen, formed in a solid amorphous host matrix having structural configuration which have local rather than long range order and electronic configurations providing an energy gap and an electrical activation energy. It also includes a modifier material added to the amorphous host matrix, such as a transition metal or rare earth element, having orbitals which interact with the amorphous host matrix and form electronic states in the energy gap which modify substantially the electronic configurations of the amorphous host matrix at room temperature and above. The amorphous semiconductor member may also comprise an amorphous host matrix formed from boron, carbon, silicon or germanium having a modifier material of boron or carbon added thereto. The forming of the amorphous host matrix and the adding of the modifier material is preferably done by cosputtering or the like.
Inventors
- 👤 Stanford R. Ovshinsky
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-25 05:03
CPC Classifications
H; H10; H10N; H10N10/00; H10N10/80; H10N10/85; H10N10/851; H10N10/855; H10D; H10D62/00; H10D62/40; H10F; H10F10/00; H10F10/10; H10F10/18; H10F77/00; H10F77/10; H10F77/16; H10F77/162; H10F77/166; H10N10/8556; Y; Y02; Y02E; Y02E10/00; Y02E10/50; Y10; Y10S; Y10S257/00; Y10S257/93
Claims Analysis
Total Claims: 89
Claim 1
Independent Claim
108 words
An amorphous semiconductor member comprising an amorphous semiconductor material including a composition of a plurality of elements, at least one of which is a low atomic weight element comprising boron, carbon, nitrogen or oxygen, formed in a solid amorphous host matrix having structural configurations which have local rather than long range order and electronic configurations providing an energy gap and an electrical activation energy, and a modifier material added to said amorphous host matrix and having orbitals which interact with the amorphous host matrix and form electronic states in the energy gap which modify substantially the electronic configurations of the amorphous host matrix at room temperature and above.
Claim 2
Dependent Claim
108 words
An amorphous semiconductor member comprising an amorphous semiconductor material including a composition of a plurality of elements, at least one of which is a low atomic weight element comprising boron, carbon, nitrogen or oxygen, formed in a solid amorphous host matrix having structural configurations which have local rather than long range order and electronic configurations providing an energy gap and an electrical activation energy, and a modifier material added to said amorphous host matrix and having orbitals which interact with the amorphous host matrix and form electronic states in the energy gap which modify substantially the electronic configurations of the amorphous host matrix at room temperature and above.
Claim 3
Dependent Claim
33 words
An amorphous semiconductor member as defined in claim 1 wherein the composition of the amorphous semiconductor material of the amorphous host matrix comprises at least two of said elements of low atomic weight.
Claim 4
Dependent Claim
26 words
An amorphous semiconductor member as defined in claim 2 wherein the composition of the amorphous semiconductor material of the amorphous host matrix comprises boron and nitrogen.
Claim 5
Dependent Claim
26 words
An amorphous semiconductor member as defined in claim 2 wherein the composition of the amorphous semiconductor material of the amorphous host matrix comprises boron and carbon.
Claim 6
Dependent Claim
26 words
An amorphous semiconductor member as defined in claim 1 wherein the composition of the amorphous semiconductor material of the amorphous host matrix comprises silicon and nitrogen.
Claim 7
Dependent Claim
26 words
An amorphous semiconductor member as defined in claim 1 wherein the composition of the amorphous semiconductor material of the amorphous host matrix comprises silicon and oxygen.
Claim 8
Dependent Claim
26 words
An amorphous semiconductor member as defined in claim 1 wherein the composition of the amorphous semiconductor material of the amorphous host matrix comprises silicon and carbon.
Claim 9
Dependent Claim
26 words
An amorphous semiconductor member as defined in claim 1 wherein the composition of the amorphous semiconductor material of the amorphous host matrix comprises tellurium and oxygen.
Claim 10
Dependent Claim
18 words
An amorphous semiconductor member as defined in claim 1 wherein the amorphous host matrix comprises a transition metal.
Claim 11
Dependent Claim
23 words
An amorphous semiconductor member as defined in claim 2 wherein the modifier material added to said amorphous host matrix comprises a transition metal.
Claim 12
Dependent Claim
40 words
An amorphous semiconductor member as defined in claim 1 wherein the amorphous host matrix of the amorphous semiconductor material is normally of intrinsic-like conduction and the modifier material added to the amorphous host matrix changes the same to extrinsic-like conduction.
Claim 13
Dependent Claim
32 words
An amorphous semiconductor member as defined in claim 1 wherein the amorphous host matrix is formed and the modifier material is added by cosputtering the amorphous semiconductor material and the modifier material.
Claim 14
Dependent Claim
42 words
An amorphous semiconductor member as defined in claim 1 wherein the modifier material added to said amorphous host matrix reduces substantially the electrical activation energy thereof and, hence, increases substantially the electrical conductivity of the semiconductor member at room temperature and above.
Claim 15
Dependent Claim
33 words
An amorphous semiconductor member as defined in claim 1 wherein the modifier material added to said amorphous host matrix changes substantially the Seebeck coefficient of the semiconductor member and/or the conductivity type thereof.
Claim 16
Dependent Claim
24 words
An amorphous semiconductor member as defined in claim 1 wherein the semiconductor member is capable of withstanding high temperatures and having good toughness characteristics.
Claim 17
Dependent Claim
104 words
An amorphous semiconductor member comprising an amorphous semiconductor material which is primarily tetrahedral bonding and comprises silicon and/or germanium and which is formed in a solid amorphous host matrix having structural configurations which have local rather than long range order and electronic configurations providing an energy gap and an electrical activation energy, and a modifier material added to said amorphous matrix, and comprising a low atomic weight element including carbon and having orbitals which interact with the amorphous host matrix and form electronic states in the energy gap which modify substantially the electronic configurations of the amorphous host matrix at room temperature and above.
Claim 18
Dependent Claim
104 words
An amorphous semiconductor member comprising an amorphous semiconductor material which is primarily tetrahedral bonding and comprises silicon and/or germanium and which is formed in a solid amorphous host matrix having structural configurations which have local rather than long range order and electronic configurations providing an energy gap and an electrical activation energy, and a modifier material added to said amorphous matrix, and comprising a low atomic weight element including carbon and having orbitals which interact with the amorphous host matrix and form electronic states in the energy gap which modify substantially the electronic configurations of the amorphous host matrix at room temperature and above.
Claim 19
Dependent Claim
16 words
An amorphous semiconductor member as defined in claim 16 wherein the amorphous semiconductor material comprises silicon.
Claim 20
Dependent Claim
40 words
An amorphous semiconductor member as defined in claim 16 wherein the amorphous host matrix of the amorphous semiconductor material is normally of intrinsic-like conduction and the modifier material added to the amorphous host matrix changes the same to extrinsic-like conduction.
Claim 21
Dependent Claim
32 words
An amorphous semiconductor member as defined in claim 16 wherein the amorphous host matrix is formed and the modifier material is added by cosputtering the amorphous semiconductor material and the modifier material.
Claim 22
Dependent Claim
24 words
An amorphous semiconductor member as defined in claim 16 wherein the semiconductor member is capable of withstanding high temperatures and having good toughness characteristics.
Claim 23
Dependent Claim
42 words
An amorphous semiconductor member as defined in claim 16 wherein the modifier material added to said amorphous host matrix reduces substantially the electrical activation energy thereof an, hence, increases substantially the electrical conductivity of the semiconductor member at room temperature and above.
Claim 24
Dependent Claim
33 words
An amorphous semiconductor member as defined in claim 16 wherein the modifier material added to said amorphous host matrix changes substantially the Seebeck coefficient of the semiconductor member and/or the conductivity type thereof.
Claim 25
Dependent Claim
118 words
An amorphous semiconductor member comprising an amorphous semiconductor material which is primarily tetrahedral bonding and comprises silicon and/or germanium and which is formed in a solid amorphous host matrix having structural configurations which have local rather than long range order and electronic configurations providing an energy gap and an electrical activation energy, and a modifier material added to said amorphous matrix, primarily in a non-substitutional manner and can be in amounts greater than dopant amounts, and comprising a low atomic weight element including boron and having orbitals which interact with the amorphous host matrix and form electronic states in the energy gap which modify substantially the electronic configurations of the amorphous host matrix at room temperature and above.
Claim 26
Dependent Claim
118 words
An amorphous semiconductor member comprising an amorphous semiconductor material which is primarily tetrahedral bonding and comprises silicon and/or germanium and which is formed in a solid amorphous host matrix having structural configurations which have local rather than long range order and electronic configurations providing an energy gap and an electrical activation energy, and a modifier material added to said amorphous matrix, primarily in a non-substitutional manner and can be in amounts greater than dopant amounts, and comprising a low atomic weight element including boron and having orbitals which interact with the amorphous host matrix and form electronic states in the energy gap which modify substantially the electronic configurations of the amorphous host matrix at room temperature and above.
Claim 27
Dependent Claim
16 words
An amorphous semiconductor member as defined in claim 23 wherein the amorphous semiconductor material comprises silicon.
Claim 28
Dependent Claim
40 words
An amorphous semiconductor member as defined in claim 23 wherein the amorphous host matrix of the amorphous semiconductor material is normally of intrinsic-like conduction and the modifier material added to the amorphous host matrix changes the same to extrinsic-like conduction.
Claim 29
Dependent Claim
32 words
An amorphous semiconductor member as defined in claim 23 wherein the amorphous host matrix is formed and the modifier material is added by cosputtering the amorphous semiconductor material and the modifier material.
Claim 30
Dependent Claim
24 words
An amorphous semiconductor member as defined in claim 23 wherein the semiconductor member is capable of withstanding high temperatures and having good toughness characteristics.
Claim 31
Dependent Claim
42 words
An amorphous semiconductor member as defined in claim 23 wherein the modifier material added to said amorphous host matrix reduces substantially the electrical activation energy thereof and, hence, increases substantially the electrical conductivity of the semiconductor member at room temperature and above.
Claim 32
Dependent Claim
33 words
An amorphous semiconductor member as defined in claim 23 wherein the modifier material added to said amorphous host matrix changes substantially the Seebeck coefficient of the semiconductor member and/or the conductivity type thereof.
Claim 33
Dependent Claim
103 words
An amorphous semiconductor member comprising an amorphous semiconductor material which is of low atomic weight and comprises boron and which is formed in a solid amorphous host matrix having structural configurations which have local rather than long range order and electronic configurations providing an energy gap and an electrical activation energy, and a modifier material added to said amorphous matrix, and comprising a low atomic weight element including carbon and having orbitals which interact with the amorhous host matrix and form electronic states in the energy gap which modify substantially the electronic configurations of the amorphous host matrix at room temperature and above.
Claim 34
Dependent Claim
103 words
An amorphous semiconductor member comprising an amorphous semiconductor material which is of low atomic weight and comprises boron and which is formed in a solid amorphous host matrix having structural configurations which have local rather than long range order and electronic configurations providing an energy gap and an electrical activation energy, and a modifier material added to said amorphous matrix, and comprising a low atomic weight element including carbon and having orbitals which interact with the amorhous host matrix and form electronic states in the energy gap which modify substantially the electronic configurations of the amorphous host matrix at room temperature and above.
Claim 35
Dependent Claim
40 words
An amorphous semiconductor member as defined in claim 30 wherein the amorphous host matrix of the amorphous semiconductor material is normally of intrinsic-like conduction and the modifier material added to the amorphous host matrix changes the same to extrinsic-like conduction.
Claim 36
Dependent Claim
32 words
An amorphous semiconductor member as defined in claim 30 wherein the amorphous host matrix is formed and the modifier material is added by cosputtering the amorphous semiconductor material and the modifier material.
Claim 37
Dependent Claim
24 words
An amorphous semiconductor member as defined in claim 30 wherein the semiconductor member is capable of withstanding high temperatures and having good toughness characteristics.
Claim 38
Dependent Claim
42 words
An amorphous semiconductor member as defined in claim 30 wherein the modifier material added to said amorphous host matrix reduces substantially the electrical activation energy thereof and, hence, increases substantially the electrical conductivity of the semiconductor member at room temperature and above.
Claim 39
Dependent Claim
33 words
An amorphous semiconductor member as defined in claim 30 wherein the modifier material added to said amorphous host matrix changes substantially the Seebeck coefficient of the semiconductor member and/or the conductivity type thereof.
Claim 40
Dependent Claim
103 words
An amorphous semiconductor member comprising an amorphous semiconductor material which is of low atomic weight and comprises carbon and which is formed in a solid amorphous host matrix having structural configurations which have local rather than long range order and electronic configurations providing an energy gap and an electrical activation energy, and a modifier material added to said amorphous matrix, and comprising a low atomic weight element including boron and having orbitals which interact with the amorphous host matrix and form electronic states in the energy gap which modify substantially the electronic configurations of the amorphous host matrix at room temperature and above.
Claim 41
Dependent Claim
103 words
An amorphous semiconductor member comprising an amorphous semiconductor material which is of low atomic weight and comprises carbon and which is formed in a solid amorphous host matrix having structural configurations which have local rather than long range order and electronic configurations providing an energy gap and an electrical activation energy, and a modifier material added to said amorphous matrix, and comprising a low atomic weight element including boron and having orbitals which interact with the amorphous host matrix and form electronic states in the energy gap which modify substantially the electronic configurations of the amorphous host matrix at room temperature and above.
Claim 42
Dependent Claim
40 words
An amorphous semiconductor member as defined in claim 36 wherein the amorphous host matrix of the amorphous semiconductor material is normally of intrinsic-like conduction and the modifier material added to the amorphous host matrix changes the same to extrinsic-like conduction.
Claim 43
Dependent Claim
32 words
An amorphous semiconductor member as defined in claim 36 wherein the amorphous host matrix is formed and the modifier material is added by cosputtering the amorphous semiconductor material and the modifier material.
Claim 44
Dependent Claim
24 words
An amorphous semiconductor member as defined in claim 36 wherein the semiconductor member is capable of withstanding high temperatures and having good toughness characteristics.
Claim 45
Dependent Claim
42 words
An amorphous semiconductor member as defined in claim 36 wherein the modifier material added to said amorphous host matrix reduces substantially the electrical activation energy thereof and, hence, increases substantially the electrical conductivity of the semiconductor member at room temperature and above.
Claim 46
Dependent Claim
33 words
An amorphous semiconductor member as defined in claim 36 wherein the modifier material added to said amorphous host matrix changes substantially the Seebeck coefficient of the semiconductor member and/or the conductivity type thereof.
Claim 47
Dependent Claim
94 words
An amorphous semiconductor member comprising an amorphous semiconductor material which is of low atomic weight and comprises boron and which is formed in a solid amorphous host matrix having structural configurations which have local rather than long range order and electronic configurations providing an energy gap and an electrical activation energy, and a modifier material added to said amorphous matrix and having orbitals which interact with the amorphous host matrix and form electronic states in the energy gap which modify substantially the electronic configurations of the amorphous host matrix at room temperature and above.
Claim 48
Dependent Claim
94 words
An amorphous semiconductor member comprising an amorphous semiconductor material which is of low atomic weight and comprises boron and which is formed in a solid amorphous host matrix having structural configurations which have local rather than long range order and electronic configurations providing an energy gap and an electrical activation energy, and a modifier material added to said amorphous matrix and having orbitals which interact with the amorphous host matrix and form electronic states in the energy gap which modify substantially the electronic configurations of the amorphous host matrix at room temperature and above.
Claim 49
Dependent Claim
17 words
An amorphous semiconductor member as defined in claim 42 wherein the modifier material comprises a transition metal.
Claim 50
Dependent Claim
40 words
An amorphous semiconductor member as defined in claim 42 wherein the amorphous host matrix of the amorphous semiconductor material is normally of intrinsic-like conduction and the modifier material added to the amorphous host matrix changes the same to extrinsic-like conduction.
Claim 51
Dependent Claim
32 words
An amorphous semiconductor member as defined in claim 42 wherein the amorphous host matrix is formed and the modifier material is added by cosputtering the amorphous semiconductor material and the modifier material.
Claim 52
Dependent Claim
24 words
An amorphous semiconductor member as defined in claim 42 wherein the semiconductor member is capable of withstanding high temperatures and having good toughness characteristics.
Claim 53
Dependent Claim
42 words
An amorphous semiconductor member as defined in claim 42 wherein the modifier material added to said amorphous host matrix reduces substantially the electrical activation energy thereof and, hence, increases substantially the electrical conductivity of the semiconductor member at room temperature and above.
Claim 54
Dependent Claim
33 words
An amorphous semiconductor member as defined in claim 42 wherein the modifier material added to said amorphous host matrix changes substantially the Seebeck coefficient of the semiconductor member and/or the conductivity type thereof.
Claim 55
Independent Claim
112 words
The method of making an amorphous semiconductor member comprising, forming an amorphous semiconductor material including a composition of a plurality of elements, at least one of which is a low atomic weight element comprising boron, carbon, nitrogen or oxygen, in a solid amorphous host matrix having structural configurations which have local rather than long range order and electronic configurations providing an energy gap and an electrical activation energy, and adding to said amorphous host matrix and a modifier material having orbitals which interact with the amorphous host matrix and form electronic states in the energy gap which modify substantially the electronic configurations of the amorphous host matrix at room temperature and above.
Claim 56
Independent Claim
112 words
The method of making an amorphous semiconductor member comprising, forming an amorphous semiconductor material including a composition of a plurality of elements, at least one of which is a low atomic weight element comprising boron, carbon, nitrogen or oxygen, in a solid amorphous host matrix having structural configurations which have local rather than long range order and electronic configurations providing an energy gap and an electrical activation energy, and adding to said amorphous host matrix and a modifier material having orbitals which interact with the amorphous host matrix and form electronic states in the energy gap which modify substantially the electronic configurations of the amorphous host matrix at room temperature and above.
Claim 57
Dependent Claim
31 words
The method as defined in claim 49 wherein the composition of the amorphous semiconductor material of the amorphous host matrix comprises at least two of said elements of low atomic weight.
Claim 58
Dependent Claim
21 words
The method as defined in claim 50 wherein the modifier material added to said amorphous host matrix comprises a transition metal.
Claim 59
Dependent Claim
21 words
The method as defined in claim 49 wherein the modifier material added to said amorphous host matrix comprises a transition metal.
Claim 60
Dependent Claim
30 words
The method as defined in claim 49 wherein the amorphous host matrix is formed and the modifier material is added by cosputtering the amorphous semiconductor material and the modifier material.
Claim 61
Independent Claim
105 words
The method of making an amorphous semiconductor member comprising forming an amorphous semiconductor material, which is primarily tetrahedral bonding and comprises silicon and/or germanium, in a solid amorphous host matrix having structural configurations which have local rather than long range order and electronic configurations providing an energy gap and an electrical activation energy, and adding to said amorphous host matrix a modifier material comprising a low atomic weight element including carbon and having orbitals which interact with the amorphous host matrix and form electronic states in the energy gap which modify substantially the electronic configurations of the amorphous host matrix at room temperature and above.
Claim 62
Independent Claim
105 words
The method of making an amorphous semiconductor member comprising forming an amorphous semiconductor material, which is primarily tetrahedral bonding and comprises silicon and/or germanium, in a solid amorphous host matrix having structural configurations which have local rather than long range order and electronic configurations providing an energy gap and an electrical activation energy, and adding to said amorphous host matrix a modifier material comprising a low atomic weight element including carbon and having orbitals which interact with the amorphous host matrix and form electronic states in the energy gap which modify substantially the electronic configurations of the amorphous host matrix at room temperature and above.
Claim 63
Dependent Claim
30 words
The method as defined in claim 54 wherein the amorphous host matrix is formed and the modifier material is added by cosputtering the amorphous semiconductor material and the modifier material.
Claim 64
Dependent Claim
22 words
The method as defined in claim 54 wherein the semiconductor member is capable of withstanding high temperatures and having good toughness characteristics.
Claim 65
Independent Claim
119 words
The method of making an amorphous semiconductor member comprising forming an amorphous semiconductor material, which is primarily tetrahedral bonding and comprises silicon and/or germanium, in a solid amorphous host matrix having structural configurations which have local rather than long range order and electronic configurations providing an energy gap and an electrical activation energy, and adding to said amorphous host matrix, primarily in a non-substitutional manner and can be in amounts greater than dopant amounts, a modifier material comprising a low atomic weight element including boron and having orbitals which interact with the amorphous host matrix and form electronic states in the energy gap which modify substantially the electronic configurations of the amorphous host matrix at room temperature and above.
Claim 66
Independent Claim
119 words
The method of making an amorphous semiconductor member comprising forming an amorphous semiconductor material, which is primarily tetrahedral bonding and comprises silicon and/or germanium, in a solid amorphous host matrix having structural configurations which have local rather than long range order and electronic configurations providing an energy gap and an electrical activation energy, and adding to said amorphous host matrix, primarily in a non-substitutional manner and can be in amounts greater than dopant amounts, a modifier material comprising a low atomic weight element including boron and having orbitals which interact with the amorphous host matrix and form electronic states in the energy gap which modify substantially the electronic configurations of the amorphous host matrix at room temperature and above.
Claim 67
Dependent Claim
30 words
The method as defined in claim 57 wherein the amorphous host matrix is formed and the modifier material is added by cosputtering the amorphous semiconductor material and the modifier material.
Claim 68
Dependent Claim
22 words
The method as defined in claim 57 wherein the semiconductor member is capable of withstanding high temperatures and having good toughness characteristics.
Claim 69
Independent Claim
98 words
The method of making an amorphous semiconductor member comprising forming an amorphous semiconductor material, which comprises boron in a solid amorphous host matrix having structural configurations which have local rather than long range order and electronic configurations providing an energy gap and an electrical activation energy, and adding to said amorphous host matrix a modifier material comprising a low atomic weight element including carbon and having orbitals which interact with the amorphous host matrix and form electronic states in the energy gap which modify substantially the electronic configurations of the amorphous host matrix at room temperature and above.
Claim 70
Independent Claim
98 words
The method of making an amorphous semiconductor member comprising forming an amorphous semiconductor material, which comprises boron in a solid amorphous host matrix having structural configurations which have local rather than long range order and electronic configurations providing an energy gap and an electrical activation energy, and adding to said amorphous host matrix a modifier material comprising a low atomic weight element including carbon and having orbitals which interact with the amorphous host matrix and form electronic states in the energy gap which modify substantially the electronic configurations of the amorphous host matrix at room temperature and above.
Claim 71
Dependent Claim
30 words
The method as defined in claim 60 wherein the amorphous host matrix is formed and the modifier material is added by cosputtering the amorphous semiconductor material and the modifier material.
Claim 72
Dependent Claim
22 words
The method as defined in claim 60 wherein the semiconductor member is capable of withstanding high temperatures and having good toughness characteristics.
Claim 73
Independent Claim
98 words
The method of making an amorphous semiconductor member comprising forming an amorphous semiconductor material which comprises carbon in a solid amorphous host matrix having structural configurations which have local rather than long range order and electronic configurations providing an energy gap and an electrical activation energy, and adding to said amorphous host matrix a modifier material comprising a low atomic weight element including boron and having orbitals which interact with the amorphous host matrix and form electronic states in the energy gap which modify substantially the electronic configurations of the amorphous host matrix at room temperature and above.
Claim 74
Independent Claim
98 words
The method of making an amorphous semiconductor member comprising forming an amorphous semiconductor material which comprises carbon in a solid amorphous host matrix having structural configurations which have local rather than long range order and electronic configurations providing an energy gap and an electrical activation energy, and adding to said amorphous host matrix a modifier material comprising a low atomic weight element including boron and having orbitals which interact with the amorphous host matrix and form electronic states in the energy gap which modify substantially the electronic configurations of the amorphous host matrix at room temperature and above.
Claim 75
Dependent Claim
30 words
The method as defined in claim 63 wherein the amorphous host matrix is formed and the modifier material is added by cosputtering the amorphous semiconductor material and the modifier material.
Claim 76
Dependent Claim
22 words
The method as defined in claim 63 wherein the semiconductor member is capable of withstanding high temperatures and having good toughness characteristics.
Claim 77
Independent Claim
89 words
The method of making an amorphous semiconductor member comprising forming an amorphous semiconductor material which comprises boron in a solid amorphous host matrix having structural configurations which have local rather than long range order and electronic configurations providing an energy gap and an electrical activation energy, and adding to said amorphous host matrix a modifier material having orbitals which interact with the amorphous host matrix and form electronic states in the energy gap which modify substantially the electronic configurations of the amorphous host matrix at room temperature and above.
Claim 78
Independent Claim
89 words
The method of making an amorphous semiconductor member comprising forming an amorphous semiconductor material which comprises boron in a solid amorphous host matrix having structural configurations which have local rather than long range order and electronic configurations providing an energy gap and an electrical activation energy, and adding to said amorphous host matrix a modifier material having orbitals which interact with the amorphous host matrix and form electronic states in the energy gap which modify substantially the electronic configurations of the amorphous host matrix at room temperature and above.
Claim 79
Dependent Claim
21 words
The method as defined in claim 66 wherein the modifier material added to said amorphous host matrix comprises a transition metal.
Claim 80
Dependent Claim
30 words
The method as defined in claim 66 wherein the amorphous host matrix is formed and the modifier material is added by cosputtering the amorphous semiconductor material and the modifier material.
Claim 81
Dependent Claim
22 words
The method as defined in claim 66 wherein the semiconductor member is capable of withstanding high temperatures and having good toughness characteristics.
Claim 82
Dependent Claim
106 words
An amorphous semiconductor member comprising an amorphous semiconductor material which is primarily tetrahedral bonding and comprises silicon and/or germanium and which is formed in a solid amorphous host matrix having structural configurations which have local rather than long range order and electronic configurations providing an energy gap and an electrical activation energy, and a modifier material added to said amorphous matrix, and comprising a low atomic weight element including carbon or boron and having orbitals which interact with the amorphous host matrix and form electronic states in the energy gap which modify substantially the electronic configurations of the amorphous host matrix at room temperature and above.
Claim 83
Dependent Claim
106 words
An amorphous semiconductor member comprising an amorphous semiconductor material which is primarily tetrahedral bonding and comprises silicon and/or germanium and which is formed in a solid amorphous host matrix having structural configurations which have local rather than long range order and electronic configurations providing an energy gap and an electrical activation energy, and a modifier material added to said amorphous matrix, and comprising a low atomic weight element including carbon or boron and having orbitals which interact with the amorphous host matrix and form electronic states in the energy gap which modify substantially the electronic configurations of the amorphous host matrix at room temperature and above.
Claim 84
Dependent Claim
108 words
An amorphous semiconductor member comprising an amorphous semiconductor material which is of low atomic weight and comprises boron or carbon and which is formed in a solid amorphous host matrix having structural configurations which have local rather than long range order and electronic configurations providing an energy gap and an electrical activation energy, and a modifier material added to said amorphous matrix, and comprising a low atomic weight element including carbon or boron, respectively, and having orbitals which interact with the amorphous host matrix and form electronic states in the energy gap which modify substantially the electronic configurations of the amorphous host matrix at room temperature and above.
Claim 85
Dependent Claim
108 words
An amorphous semiconductor member comprising an amorphous semiconductor material which is of low atomic weight and comprises boron or carbon and which is formed in a solid amorphous host matrix having structural configurations which have local rather than long range order and electronic configurations providing an energy gap and an electrical activation energy, and a modifier material added to said amorphous matrix, and comprising a low atomic weight element including carbon or boron, respectively, and having orbitals which interact with the amorphous host matrix and form electronic states in the energy gap which modify substantially the electronic configurations of the amorphous host matrix at room temperature and above.
Claim 86
Independent Claim
107 words
The method of making an amorphous semiconductor member comprising forming an amorphous semiconductor material, which is primarily tetrahedral bonding and comprises silicon and/or germanium, in a solid amorphous host matrix having structural configurations which have local rather than long range order and electronic configurations providing an energy gap and an electrical activation energy, and adding to said amorphous host matrix a modifier material comprising a low atomic weight element including carbon or boron and having orbitals which interact with the amorphous host matrix and form electronic states in the energy gap which modify substantially the electronic configurations of the amorphous host matrix at room temperature and above.
Claim 87
Independent Claim
107 words
The method of making an amorphous semiconductor member comprising forming an amorphous semiconductor material, which is primarily tetrahedral bonding and comprises silicon and/or germanium, in a solid amorphous host matrix having structural configurations which have local rather than long range order and electronic configurations providing an energy gap and an electrical activation energy, and adding to said amorphous host matrix a modifier material comprising a low atomic weight element including carbon or boron and having orbitals which interact with the amorphous host matrix and form electronic states in the energy gap which modify substantially the electronic configurations of the amorphous host matrix at room temperature and above.
Claim 88
Independent Claim
103 words
The method of making an amorphous semiconductor member comprising forming an amorphous semiconductor material, which comprises boron or carbon in a solid amorphous host matrix having structural configurations which have local rather than long range order and electronic configurations providing an energy gap and an electrical activation energy, and adding to said amorphous host matrix a modifier material comprising a low atomic weight element including carbon or boron, respectively, and having orbitals which interact with the amorphous host matrix and form electronic states in the energy gap which modify substantially the electronic configurations of the amorphous host matrix at room temperature and above.
Claim 89
Independent Claim
103 words
The method of making an amorphous semiconductor member comprising forming an amorphous semiconductor material, which comprises boron or carbon in a solid amorphous host matrix having structural configurations which have local rather than long range order and electronic configurations providing an energy gap and an electrical activation energy, and adding to said amorphous host matrix a modifier material comprising a low atomic weight element including carbon or boron, respectively, and having orbitals which interact with the amorphous host matrix and form electronic states in the energy gap which modify substantially the electronic configurations of the amorphous host matrix at room temperature and above.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1982-12-03 | 1983-06-04 | 1983-12-04 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1986-12-03 | 1987-06-04 | 1987-12-04 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1990-12-03 | 1991-06-04 | 1991-12-04 | $7700.00 | Window Closed / Lapsed |