US3271591A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Symmetrical current controlling device
Assignee: Energy Conversion Devices Inc
•
Filing: 1963-09-20
•
Granted: 1966-09-06
•
Expires: 1983-09-20
Abstract
No abstract record available.
Inventors
- 👤 Stanford R Ovshinsky
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-24 19:41
CPC Classifications
H; H03; H03K; H03K17/00; H03K17/51; H03K17/56; G; G03; G03C; G03C1/00; G03C1/705; G11; G11B; G11B7/00; G11B7/24; G11B7/241; G11B7/242; G11B7/243; H10; H10N; H10N70/00; H10N70/20; H10N70/231; H10N70/253; H10N70/801; H10N70/881; H10N70/882; H10N70/8822; H10N70/8825; H10N70/8828; H10N70/883; H10N70/8833; Y; Y10; Y10S; Y10S420/00; Y10S420/903
Claims Analysis
Total Claims: 2
Claim 1
Independent Claim
179 words
A SYMMETRICAL CURRENT CONTROLLING DEVICE FOR AN ELECTRICAL CIRCUIT INCLUDING A MECHANISM TYPE SEMICONDUCTOR MATERIAL MEANS AND ELECTRODES IN NON-RECTIFYING CONTACT THEREWITH FOR CONNECTING THE SAME IN SERIES IN SAID ELECTRICAL CIRCUIT, SAID SEMICONDUCTOR MATERIAL MEANS BEING OF ONE CONDUCTIVITY TYPE, SAID SEMICONDUCTOR MATERIAL MEANS INCLUDING MEANS FOR PROVIDING A FIRST CONDITION OF RELATIVELY HIGH RESISTANCE FOR SUBSTANTIALLY BLOCKING CURRENT THERETHROUGH BETWEEN THE ELECTRODES SUBSTANTIALLY EQUALLY IN EACH DIRECTION, SAID SEMICONDUCTOR MATERIAL MEANS INCLUDING MEANS RESPONSIVE TO A VOLTAGE OF AT LEAST A THRESHOLD VALUE IN EITHER DIRECTION OR ALTERNATELY IN BOTH DIRECTIONS APPLIED TO SAID ELECTRODES FOR ALTERING SAID FIRST CONDITION OF RELATIVELY HIGH RESISTANCE OF SAID SEMICONDUCTOR MATERIAL MEANS FOR SUBSTANTIALLY INSTANTANEOUSLY PROVIDING AT LEAST ONE PATH THROUGH SAID-CONDUCTOR MATERIAL MEANS BETWEEN THE ELECTRODES HAVING A SECOND CONDITION OF RELATIVELY LOW RESISTANCE FOR CONDUCTING CURRENT THERETHROUGH BETWEEN THE ELECTRODES SUBSTANTIALLY EQUALLY IN EACH DIRECTION, SAID MAINTAINING SAID AT LEAST ONE PATH OF CLUDING MEANS FOR MAINTAINING SAID AT LEAST ONE PATH OF SAID SEMICONDUCTOR MATERIAL MEANS IN ITS SAID SECOND RELATIVELY LOW RESISTANCE CONDUCTING CONDITION AND PROVIDING
Claim 2
Dependent Claim
179 words
A SYMMETRICAL CURRENT CONTROLLING DEVICE FOR AN ELECTRICAL CIRCUIT INCLUDING A MECHANISM TYPE SEMICONDUCTOR MATERIAL MEANS AND ELECTRODES IN NON-RECTIFYING CONTACT THEREWITH FOR CONNECTING THE SAME IN SERIES IN SAID ELECTRICAL CIRCUIT, SAID SEMICONDUCTOR MATERIAL MEANS BEING OF ONE CONDUCTIVITY TYPE, SAID SEMICONDUCTOR MATERIAL MEANS INCLUDING MEANS FOR PROVIDING A FIRST CONDITION OF RELATIVELY HIGH RESISTANCE FOR SUBSTANTIALLY BLOCKING CURRENT THERETHROUGH BETWEEN THE ELECTRODES SUBSTANTIALLY EQUALLY IN EACH DIRECTION, SAID SEMICONDUCTOR MATERIAL MEANS INCLUDING MEANS RESPONSIVE TO A VOLTAGE OF AT LEAST A THRESHOLD VALUE IN EITHER DIRECTION OR ALTERNATELY IN BOTH DIRECTIONS APPLIED TO SAID ELECTRODES FOR ALTERING SAID FIRST CONDITION OF RELATIVELY HIGH RESISTANCE OF SAID SEMICONDUCTOR MATERIAL MEANS FOR SUBSTANTIALLY INSTANTANEOUSLY PROVIDING AT LEAST ONE PATH THROUGH SAID-CONDUCTOR MATERIAL MEANS BETWEEN THE ELECTRODES HAVING A SECOND CONDITION OF RELATIVELY LOW RESISTANCE FOR CONDUCTING CURRENT THERETHROUGH BETWEEN THE ELECTRODES SUBSTANTIALLY EQUALLY IN EACH DIRECTION, SAID MAINTAINING SAID AT LEAST ONE PATH OF CLUDING MEANS FOR MAINTAINING SAID AT LEAST ONE PATH OF SAID SEMICONDUCTOR MATERIAL MEANS IN ITS SAID SECOND RELATIVELY LOW RESISTANCE CONDUCTING CONDITION AND PROVIDING
References Cited (Backward Citations)
US1751361A
Cited
US2032439A
Cited
US2208455A
Cited
US2847335A
Cited
US2865794A
Cited
US2865793A
Cited
US3018312A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1969-09-05 | 1970-03-07 | 1970-09-06 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1973-09-05 | 1974-03-07 | 1974-09-06 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1977-09-05 | 1978-03-07 | 1978-09-06 | $7700.00 | Window Closed / Lapsed |