US6972428B2
Expired / Lapsed
US
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Programmable resistance memory element
Assignee: BAE Systems Information and Electronic Systems Integration Inc
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Filing: 2004-08-09
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Granted: 2005-12-06
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Expires: 2024-08-09
Abstract
Abstract A programmable resistance memory element using a conductive sidewall layer as the bottom electrode. The programmable resistance memory material deposited over the top edge of the bottom electrode, in a slot-like opening of a dielectric material. A method of making the opening.
Inventors
- 👤 Jon Maimon
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 10:25
CPC Classifications
G; G11; G11C; G11C11/00; G11C11/56; G11C11/5678; H; H10; H10N; H10N70/00; H10N70/011; H10N70/061; H10N70/068; H10N70/20; H10N70/231; H10N70/801; H10N70/821; H10N70/826; H10N70/828; H10N70/881; H10N70/882; H10N70/8828; G11C13/00; G11C13/0002; G11C13/0004
Claims Analysis
Total Claims: 20
Claim 1
Independent Claim
93 words
A programmable resistance memory element, comprising: a first dielectric material having an opening, said opening having a sidewall surface and a bottom surface; a conductive layer formed over said sidewall surface; a second dielectric material formed over said conductive layer within said opening; a third dielectric material formed over an edge of said conductive layer, said third dielectric material having an opening formed therethrough, said opening having a lateral dimension less than 500 Angstroms; and a programmable resistance material disposed in said opening, said programmable resistance material in electrical contact with said edge.
Claim 2
Dependent Claim
93 words
A programmable resistance memory element, comprising: a first dielectric material having an opening, said opening having a sidewall surface and a bottom surface; a conductive layer formed over said sidewall surface; a second dielectric material formed over said conductive layer within said opening; a third dielectric material formed over an edge of said conductive layer, said third dielectric material having an opening formed therethrough, said opening having a lateral dimension less than 500 Angstroms; and a programmable resistance material disposed in said opening, said programmable resistance material in electrical contact with said edge.
Claim 3
Dependent Claim
13 words
The memory element of claim 1 , wherein said opening is a trench.
Claim 4
Dependent Claim
12 words
The memory element of claim 1 , wherein said edge is annular.
Claim 5
Dependent Claim
12 words
The memory element of claim 1 , wherein said edge is linear.
Claim 6
Dependent Claim
15 words
The memory element of claim 1 , wherein said conductive layer is a sidewall layer.
Claim 7
Dependent Claim
17 words
The memory element of claim 1 , wherein said conductive layer is a sidewall spacer or liner.
Claim 8
Dependent Claim
16 words
The memory element of claim 1 , wherein said programmable resistance material is a phase-change material.
Claim 9
Dependent Claim
16 words
The memory element of claim 1 , wherein said programmable resistance material comprises a chalcogen element.
Claim 10
Dependent Claim
22 words
The memory element of claim 1 , wherein said conductive layer has a thickness of less than 500 Angstroms at said edge.
Claim 11
Dependent Claim
20 words
The memory element of claim 1 , wherein said conductive layer is disposed on said bottom surface of said opening.
Claim 12
Dependent Claim
13 words
The memory element of claim 1 , wherein said conductive layer is cup-shaped.
Claim 13
Dependent Claim
70 words
An electrically programmable memory element, comprising: a substrate; a cup-shaped conductive layer having an open end that faces away from said substrate; a dielectric layer disposed over a top edge of said conductive layer, said dielectric layer having an opening, said opening having a lateral dimension less than 500 Angstroms; and a programmable resistance material disposed in said opening, said programmable resistance material is electrical contact with said top edge.
Claim 14
Dependent Claim
70 words
An electrically programmable memory element, comprising: a substrate; a cup-shaped conductive layer having an open end that faces away from said substrate; a dielectric layer disposed over a top edge of said conductive layer, said dielectric layer having an opening, said opening having a lateral dimension less than 500 Angstroms; and a programmable resistance material disposed in said opening, said programmable resistance material is electrical contact with said top edge.
Claim 15
Dependent Claim
23 words
The memory element of claim 12 , wherein said cup-shaped electrode has a thickness of less than 500 Angstroms at said top edge.
Claim 16
Dependent Claim
13 words
The memory element of claim 12 , wherein said opening is a trench.
Claim 17
Dependent Claim
13 words
The memory element of claim 12 , wherein said opening is a hole.
Claim 18
Dependent Claim
18 words
The memory element of claim 12 , wherein said memory material programmable resistance material is a phase-change material.
Claim 19
Dependent Claim
18 words
The memory element of claim 12 , wherein said memory material programmable resistance material comprises a chalcogen element.
Claim 20
Dependent Claim
16 words
The memory element of claim 12 , wherein said cup-shaped conductive layer has a cylindrical shape.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2008-12-05 | 2009-06-06 | 2009-12-06 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2012-12-05 | 2013-06-06 | 2013-12-06 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2016-12-05 | 2017-06-06 | 2017-12-06 | $7700.00 | Window Closed / Lapsed |