US6774387B2
Expired / Lapsed
US
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Programmable resistance memory element
Assignee: BAE Systems Information and Electronic Systems Integration Inc
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Filing: 2002-02-08
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Granted: 2004-08-10
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Expires: 2022-02-08
Abstract
Abstract A programmable resistance memory element using a conductive sidewall layer as the bottom electrode. The programmable resistance memory material deposited over the top edge of the bottom electrode, in a slot-like opening of a dielectric material. A method of making the opening.
Inventors
- 👤 Jon Maimon
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 10:52
CPC Classifications
G; G11; G11C; G11C11/00; G11C11/56; G11C11/5678; H; H10; H10N; H10N70/00; H10N70/011; H10N70/061; H10N70/068; H10N70/20; H10N70/231; H10N70/801; H10N70/821; H10N70/826; H10N70/828; H10N70/881; H10N70/882; H10N70/8828; G11C13/00; G11C13/0002; G11C13/0004
Claims Analysis
Total Claims: 10
Claim 1
Independent Claim
78 words
A programmable resistance memory element, comprising: a first dielectric material having a sidewall surface; a conductive layer formed over said sidewall surface; a second dielectric material formed over said conductive layer, wherein an edge of said conductive layer is exposed; a third dielectric material formed over said edge, said third dielectric material having an opening formed therethrough uncovering a portion of said edge; and a programmable resistance material disposed in said opening and in communication with said edge.
Claim 2
Dependent Claim
78 words
A programmable resistance memory element, comprising: a first dielectric material having a sidewall surface; a conductive layer formed over said sidewall surface; a second dielectric material formed over said conductive layer, wherein an edge of said conductive layer is exposed; a third dielectric material formed over said edge, said third dielectric material having an opening formed therethrough uncovering a portion of said edge; and a programmable resistance material disposed in said opening and in communication with said edge.
Claim 3
Dependent Claim
19 words
The memory element of claim 1 , wherein said opening has a lateral dimension less than a photolithographic limit.
Claim 4
Dependent Claim
13 words
The memory element of claim 1 , wherein said opening is a trench.
Claim 5
Dependent Claim
12 words
The memory element of claim 1 , wherein said edge is annular.
Claim 6
Dependent Claim
12 words
The memory element of claim 1 , wherein said edge is linear.
Claim 7
Dependent Claim
15 words
The memory element of claim 1 , wherein said conductive layer is a sidewall layer.
Claim 8
Dependent Claim
17 words
The memory element of claim 1 , wherein said conductive layer is a sidewall spacer or liner.
Claim 9
Dependent Claim
15 words
The memory element of claim 1 , wherein said memory material is a phase-change material.
Claim 10
Dependent Claim
15 words
The memory element of claim 1 , wherein said memory material comprises a chalcogen element.
References Cited (Backward Citations)
US5952671A
Cited
US6031287A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2007-08-10 | 2008-02-09 | 2008-08-10 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2011-08-10 | 2012-02-09 | 2012-08-10 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2015-08-10 | 2016-02-09 | 2016-08-10 | $7700.00 | Window Closed / Lapsed |