US6462353B1
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method for fabricating a small area of contact between electrodes
Assignee: Round Rock Research LLC
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Filing: 2000-11-02
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Granted: 2002-10-08
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Expires: 2020-11-02
Abstract
Abstract An electrode structure for use in a chalcogenide memory is disclosed. The electrode has a substantially frusto-conical shape, and is preferably formed by undercut etching a polysilicon layer beneath an oxide pattern. With this structure, improved current densities through the chalcogenide material can be achieved.
Inventors
- 👤 Brent Gilgen
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 10:34
CPC Classifications
H; H10; H10N; H10N70/00; H10N70/20; H10N70/231; H10B; H10B63/00; H10B63/80; H10D; H10D64/00; H10D64/01; H10D64/011; H10N70/011; H10N70/061; H10N70/063; H10N70/066; H10N70/801; H10N70/821; H10N70/826; H10N70/841; H10N70/8418; H10N70/881; H10N70/882; H10N70/8828; G; G11; G11C; G11C2213/00; G11C2213/50; G11C2213/52
Claims Analysis
Total Claims: 8
Claim 1
Independent Claim
94 words
An integrated circuit device comprising: an insulative layer formed over a substrate; a frusto-conical opening within said insulative layer, said opening having a first portion above a second portion such that said opening widens from said first portion to said second portion and wherein a top portion of said insulative layer and a top portion of said opening are coplanar; a programmable resistive material layer formed over said insulative layer and over said top portion of said opening; and a conductor provided within said opening and in electrical communication with said resistive material layer.
Claim 2
Dependent Claim
94 words
An integrated circuit device comprising: an insulative layer formed over a substrate; a frusto-conical opening within said insulative layer, said opening having a first portion above a second portion such that said opening widens from said first portion to said second portion and wherein a top portion of said insulative layer and a top portion of said opening are coplanar; a programmable resistive material layer formed over said insulative layer and over said top portion of said opening; and a conductor provided within said opening and in electrical communication with said resistive material layer.
Claim 3
Dependent Claim
15 words
The device of claim 1 , wherein said opening extends continuously through said insulative layer.
Claim 4
Dependent Claim
15 words
The device of claim 1 , wherein said conductor is substantially co-extensive with said opening.
Claim 5
Dependent Claim
19 words
The device of claim 1 , wherein said conductor is part of a conductive layer formed over said substrate.
Claim 6
Dependent Claim
15 words
The device of claim 4 , wherein said insulative layer has a substantially uniform thickness.
Claim 7
Dependent Claim
19 words
The device of claim 5 , wherein said conductive layer has a substantially uniform thickness except at said opening.
Claim 8
Dependent Claim
16 words
The device of claim 1 , wherein said resistive material layer comprises a chalcogenide material layer.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2005-10-07 | 2006-04-08 | 2006-10-08 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2009-10-07 | 2010-04-08 | 2010-10-08 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2013-10-07 | 2014-04-08 | 2014-10-08 | $7700.00 | Window Closed / Lapsed |