US6797979B2
Expired / Lapsed
US
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Metal structure for a phase-change memory device
Assignee: Intel Corp
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Filing: 2003-04-17
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Granted: 2004-09-28
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Expires: 2023-04-17
Abstract
Abstract The invention relate to a damascene chalcogenide memory cell structure. The damascene chalcogenide memory cell structure is fabricated under conditions that simplify previous process flows. The damascene chalcogenide memory cell structure also prevents volatilization of the chalcogenide memory material.
Inventors
- 👤 Chien Chiang
- 👤 Jong-Won Lee
- 👤 Patrick Klersy
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 10:26
CPC Classifications
H; H10; H10N; H10N70/00; H10N70/801; H10N70/821; H10N70/826; H10B; H10B63/00; H10B63/20; H10B63/80; H10N70/011; H10N70/061; H10N70/20; H10N70/231; H10N70/841; H10N70/8413; H10N70/881; H10N70/882; H10N70/8828; Y; Y10; Y10S; Y10S438/00; Y10S438/90
Claims Analysis
Total Claims: 66
Claim 1
Independent Claim
86 words
A phase change memory cell comprising: a lower electrode disposed in a substrate, the lower electrode having an upper surface; a phase change memory material disposed over the lower electrode upper surface; a dielectric layer disposed over the substrate, the dielectric layer having an upper surface and a recess that communicates to the lower electrode upper surface; and a damascene upper electrode disposed in the recess, wherein an upper surface of the damascene upper electrode is substantially coplanar to the upper surface of the dielectric layer.
Claim 2
Dependent Claim
86 words
A phase change memory cell comprising: a lower electrode disposed in a substrate, the lower electrode having an upper surface; a phase change memory material disposed over the lower electrode upper surface; a dielectric layer disposed over the substrate, the dielectric layer having an upper surface and a recess that communicates to the lower electrode upper surface; and a damascene upper electrode disposed in the recess, wherein an upper surface of the damascene upper electrode is substantially coplanar to the upper surface of the dielectric layer.
Claim 3
Dependent Claim
29 words
The phase change memory cell according to claim 1 , further comprising: an adhesion layer, over the lower electrode upper surface, and in contact with the phase-change memory material.
Claim 4
Dependent Claim
30 words
The phase-change memory cell according to claim 1 , wherein the dielectric layer further comprises: a first dielectric layer; and a second dielectric layer disposed over the first dielectric layer.
Claim 5
Dependent Claim
43 words
The phase-change memory cell according to claim 3 , wherein the first dielectric layer has a first breach with a first width, and wherein the second dielectric layer has a second breach with a second width that is less than the first width.
Claim 6
Dependent Claim
26 words
The phase-change memory cell according to claim 1 , further comprising: a first barrier layer disposed in the recess and over the lower electrode upper surface.
Claim 7
Dependent Claim
33 words
The phase-change memory cell according to claim 1 , further comprising: a first barrier layer disposed in the recess and over the lower electrode upper surface, wherein the first barrier layer is Ti.
Claim 8
Dependent Claim
21 words
The phase-change memory cell according to claim 6 , further comprising: a second barrier layer disposed over the first barrier layer.
Claim 9
Dependent Claim
28 words
The phase-change memory cell according to claim 7 , wherein the second barrier layer is TiN and the electrically conductive material is selected from Al and Al alloys.
Claim 10
Dependent Claim
16 words
The phase-change memory cell according to claim 5 , wherein the first barrier layer is Ta.
Claim 11
Dependent Claim
21 words
The phase-change memory cell according to claim 9 , further comprising: a second barrier layer disposed over the first barrier layer.
Claim 12
Dependent Claim
28 words
The phase-change memory cell according to claim 10 , wherein the second barrier layer is TaN and the electrically conductive material is selected from Cu and Cu alloys.
Claim 13
Dependent Claim
18 words
The phase-change memory cell according to claim 1 , further comprising: an adhesion layer disposed in the recess.
Claim 14
Dependent Claim
35 words
The phase-change memory cell according to claim 1 , further comprising: an adhesion layer disposed over the lower electrode upper surface, wherein the adhesion layer is selected from Ti, W, TiN, WN, TiSiN, and WSiN.
Claim 15
Dependent Claim
66 words
A memory comprising: a memory cell, wherein the memory cell includes: a lower electrode having an upper surface; a phase change material over the lower electrode; an upper electrode over the phase change material; and wherein the upper electrode has a damascene disposition in a dielectric layer, the dielectric layer having an upper surface that is substantially coplanar to an upper surface of the upper electrode.
Claim 16
Dependent Claim
66 words
A memory comprising: a memory cell, wherein the memory cell includes: a lower electrode having an upper surface; a phase change material over the lower electrode; an upper electrode over the phase change material; and wherein the upper electrode has a damascene disposition in a dielectric layer, the dielectric layer having an upper surface that is substantially coplanar to an upper surface of the upper electrode.
Claim 17
Dependent Claim
54 words
The memory according to claim 14 , wherein the dielectric layer includes: a first dielectric layer having a first breach with a first width; and a second dielectric layer disposed over the first dielectric layer, the second dielectric layer having a second breach with a second width that is lesser than the first width.
Claim 18
Dependent Claim
77 words
The memory according to claim 14 , wherein the memory cell further includes: a first barrier layer coupled between the phase change material and the upper electrode; and a second barrier layer coupled between the first barrier layer and the second barrier layer, wherein the first barrier layer is selected from Ti, Ti alloys, Ta, and Ta alloys, and wherein the second barrier layer is selected from nitrides of the Ti, Ti alloys, Ta, and Ta alloys.
Claim 19
Dependent Claim
40 words
The memory according to claim 14 , wherein the memory cell further includes: an adhesion layer coupled between the lower electrode and the phase change material, wherein the adhesion layer is selected from Ti, W, TiN, WN, TiSiN, and WSiN.
Claim 20
Independent Claim
43 words
An apparatus, comprising: an electrode; a dielectric material; a memory material over the electrode; and an electrically conductive material over the memory material, wherein an upper surface of the electrically conductive material is substantially coplanar to an upper surface of the dielectric material.
Claim 21
Independent Claim
43 words
An apparatus, comprising: an electrode; a dielectric material; a memory material over the electrode; and an electrically conductive material over the memory material, wherein an upper surface of the electrically conductive material is substantially coplanar to an upper surface of the dielectric material.
Claim 22
Dependent Claim
15 words
The apparatus of claim 18 , wherein the memory material is a phase change material.
Claim 23
Dependent Claim
14 words
The apparatus of claim 18 , wherein the memory material is a chalcogenide material.
Claim 24
Dependent Claim
16 words
The apparatus of claim 18 , wherein the electrically conductive material is over the memory material.
Claim 25
Dependent Claim
25 words
The apparatus of claim 18 , wherein the memory material and the electrically conductive material are located in a recess formed in the dielectric material.
Claim 26
Dependent Claim
12 words
The apparatus of claim 18 , wherein the electrode is polycrystalline silicon.
Claim 27
Dependent Claim
15 words
The apparatus of claim 18 , wherein the electrically conductive material comprises copper or aluminum.
Claim 28
Dependent Claim
16 words
The apparatus of claim 18 , wherein the electrically conductive material is a first address line.
Claim 29
Dependent Claim
22 words
The apparatus of claim 25 , further comprising a second address line coupled and substantially or orthogonal to the electrically conductive material.
Claim 30
Dependent Claim
15 words
The apparatus of claim 26 , wherein the second address line is N-type doped silicon.
Claim 31
Dependent Claim
20 words
The apparatus of claim 26 , further comprising an isolation device coupled between the electrode and the second address line.
Claim 32
Dependent Claim
22 words
The apparatus of claim 18 , further comprising a first barrier material coupled between the memory material and the electrically conductive material.
Claim 33
Dependent Claim
19 words
The apparatus of claim 29 , wherein the first barrier material is comprised of titanium (Ti) or tantalum (Ta).
Claim 34
Dependent Claim
23 words
The apparatus of claim 30 , further comprising a second barrier material coupled between the first barrier material and the electrically conductive material.
Claim 35
Dependent Claim
19 words
The apparatus of claim 31 , wherein the second barrier material is titanium nitride (TiN) or tantalum nitride (TaN).
Claim 36
Dependent Claim
19 words
The apparatus of claim 18 , further comprising an adhesion material coupled between the memory material and the electrode.
Claim 37
Dependent Claim
22 words
The apparatus of claim 33 , wherein the adhesion material is either Ti, Zr, W, TiN, WN, ZrN, TiSiN, ZrSiN, or WSiN.
Claim 38
Dependent Claim
56 words
The apparatus of claim 18 , further comprising a second dielectric material over the electrically conductive material and the dielectric material, wherein a lower surface of the second dielectric material contacts an upper surface of the electrically conductive material and a lower surface of the second dielectric material contacts an upper surface of the dielectric material.
Claim 39
Dependent Claim
19 words
The apparatus of claim 18 , wherein the electrically conductive material and the dielectric material form a damascene structure.
Claim 40
Independent Claim
75 words
An apparatus, comprising: an electrode; a first dielectric material; a memory material over the electrode; and an electrically conductive material over the memory material; and a second dielectric material over the electrically conductive material and the first dielectric material, wherein a lower surface of the second dielectric material contacts an upper surface of the electrically conductive material and the lower surface of the second dielectric material contacts an upper surface of the first dielectric material.
Claim 41
Independent Claim
75 words
An apparatus, comprising: an electrode; a first dielectric material; a memory material over the electrode; and an electrically conductive material over the memory material; and a second dielectric material over the electrically conductive material and the first dielectric material, wherein a lower surface of the second dielectric material contacts an upper surface of the electrically conductive material and the lower surface of the second dielectric material contacts an upper surface of the first dielectric material.
Claim 42
Dependent Claim
15 words
The apparatus of claim 37 , wherein the electrically conductive material is a second electrode.
Claim 43
Dependent Claim
41 words
The apparatus of claim 37 , further comprising a third dielectric material under the memory material and under the first dielectric material, wherein an upper surface of the electrode is substantially coplanar to an upper surface of the first dielectric material.
Claim 44
Dependent Claim
18 words
The apparatus of claim 37 , wherein the electrode is planarized using a chemical mechanical planarization (CMP) process.
Claim 45
Dependent Claim
37 words
The apparatus of claim 37 , wherein the electrically conductive material is a planarized electrode and wherein an upper surface of the electrically conductive material is substantially coplanar to an upper surface of the first dielectric material.
Claim 46
Dependent Claim
35 words
The apparatus of claim 37 , wherein the memory material is a phase change material and wherein an upper surface of the electrode is substantially coplanar to an upper surface of the first dielectric material.
Claim 47
Dependent Claim
14 words
The apparatus of claim 37 , wherein the memory material is a chalcogenide material.
Claim 48
Dependent Claim
26 words
The apparatus of claim 37 , wherein the memory material and the electrically conductive material are located in a recess formed in the first dielectric material.
Claim 49
Dependent Claim
12 words
The apparatus of claim 37 , wherein the electrode is polycrystalline silicon.
Claim 50
Dependent Claim
15 words
The apparatus of claim 37 , wherein the electrically conductive material comprises copper or aluminum.
Claim 51
Dependent Claim
16 words
The apparatus of claim 37 , wherein the electrically conductive material is a first address line.
Claim 52
Dependent Claim
24 words
The apparatus of claim 47 , further comprising a second address line coupled to the electrode and substantially orthogonal to the electrically conductive material.
Claim 53
Dependent Claim
15 words
The apparatus of claim 48 , wherein the second address line is N-type doped silicon.
Claim 54
Dependent Claim
20 words
The apparatus of claim 48 , further comprising an isolation device coupled between the electrode and the second address line.
Claim 55
Dependent Claim
21 words
The apparatus of claim 37 , further comprising a barrier material coupled between the memory material and the electrically conductive material.
Claim 56
Dependent Claim
13 words
The apparatus of claim 51 , wherein the barrier material comprises titanium (Ti).
Claim 57
Dependent Claim
18 words
The apparatus of claim 51 , wherein the barrier material is titanium nitride (TiN) or tantalum nitride (TaN).
Claim 58
Dependent Claim
22 words
The apparatus of claim 37 , further comprising a first barrier material coupled between the memory material and the electrically conductive material.
Claim 59
Dependent Claim
19 words
The apparatus of claim 51 , wherein the first barrier material is comprised of titanium (Ti) or tantalum (Ta).
Claim 60
Dependent Claim
23 words
The apparatus of claim 54 , further comprising a second barrier material coupled between the first barrier material and the electrically conductive material.
Claim 61
Dependent Claim
19 words
The apparatus of claim 56 , wherein the second barrier material is titanium nitride (TiN) or tantalum nitride (TaN).
Claim 62
Dependent Claim
19 words
The apparatus of claim 37 , further comprising an adhesion material coupled between the memory material and the electrode.
Claim 63
Dependent Claim
22 words
The apparatus of claim 58 , wherein the adhesion material is either Ti, Zr, W, TiN, WN, ZrN, TiSiN, ZrSiN, or WSiN.
Claim 64
Dependent Claim
14 words
The apparatus of claim 37 , wherein the second dielectric material comprises silicon dioxide.
Claim 65
Dependent Claim
20 words
The apparatus of claim 37 , wherein the electrically conductive material and the first dielectric material form a damascene structure.
Claim 66
Dependent Claim
37 words
The apparatus of claim 37 , wherein the upper surfaces of the electrically conductive material and the first dielectric material form a substantilly planar surface and the second dielectric material is formed on the substantially planar surface.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2007-09-28 | 2008-03-29 | 2008-09-28 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2011-09-28 | 2012-03-29 | 2012-09-28 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2015-09-28 | 2016-03-29 | 2016-09-28 | $7700.00 | Window Closed / Lapsed |