US6511867B2
Expired / Lapsed
US
⏱️ 0.0 years remaining
Utilizing atomic layer deposition for programmable device
Assignee: Ovonyx Memory Technology LLC
•
Filing: 2001-06-30
•
Granted: 2003-01-28
•
Expires: 2021-06-30
Abstract
Abstract In an aspect, an apparatus is provided that sets and reprograms the state of programmable devices. In an aspect, a method is provided such that an opening is formed through a dielectric exposing a contact, the contact formed on a substrate. An electrode is conformally deposited on a wall of the dielectric, utilizing atomic layer deposition (ALD). A programmable material is formed on the electrode and a conductor is formed to the programmable material. In an aspect, a barrier is conformally deposited utilizing ALD, between the electrode and the programmable material.
Inventors
- 👤 Tyler A. Lowrey
- 👤 Charles H. Dennison
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 10:57
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/01; H10W20/031; H10W20/032; H10W20/038; H10B; H10B63/00; H10B63/10; H10P; H10P14/00; H10P14/40; H10P14/42; H10P14/43; H10P14/432; H10W20/064; H10W20/065
Claims Analysis
Total Claims: 6
Claim 1
Independent Claim
54 words
A method comprising: forming a dielectric on a contact, the contact formed on a substrate; forming an opening through the dielectric exposing the contact; conformally depositing an electrode on a wall of the dielectric, utilizing atomic layer deposition (ALD); forming a programmable material on the electrode; and forming a conductor to the programmable material.
Claim 2
Independent Claim
54 words
A method comprising: forming a dielectric on a contact, the contact formed on a substrate; forming an opening through the dielectric exposing the contact; conformally depositing an electrode on a wall of the dielectric, utilizing atomic layer deposition (ALD); forming a programmable material on the electrode; and forming a conductor to the programmable material.
Claim 3
Dependent Claim
32 words
The method of claim 1 , further comprising: depositing a barrier, utilizing ALD, between the electrode and the programmable material, the barrier comprising at least one of titanium silicide and titanium nitride.
Claim 4
Dependent Claim
24 words
The method of claim 1 , wherein conformally depositing the electrode comprises conformally depositing from 10 angstroms to 1000 angstroms of electrode film thickness.
Claim 5
Dependent Claim
42 words
The method of claim 1 , wherein conformally depositing the electrode comprises conformally depositing at least one of tungsten (W), tungsten nitride (WN), titanium nitride (TiN), titanium silicon nitride (TiSiN), and tantalum nitride (TaN) having from 0.001 ohm-cm to 0.05 ohm-cm resistivity.
Claim 6
Dependent Claim
17 words
The method of claim 1 , wherein forming a programmable material comprises forming a chalcogenide memory element.
References Cited (Backward Citations)
US6150199A
Cited
US5780323A
Cited
US5296716A
Cited
US6159836A
Cited
US6002140A
Cited
US5789758A
Cited
US5879955A
Cited
US5920788A
Cited
US6229157B1
Cited
US5998244A
Cited
US5970336A
Cited
US6153890A
Cited
US6087674A
Cited
US6031287A
Cited
US5933365A
Cited
US5879459A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2006-01-27 | 2006-07-29 | 2007-01-28 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2010-01-27 | 2010-07-29 | 2011-01-28 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2014-01-27 | 2014-07-29 | 2015-01-28 | $7700.00 | Window Closed / Lapsed |