US6159836A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method for forming programmable contact structure
Assignee: STMicroelectronics lnc USA
•
Filing: 1995-05-08
•
Granted: 2000-12-12
•
Expires: 2015-05-08
Abstract
Abstract A programmable semiconductor contact structure and method are provided. A semiconductor substrate has a first patterned conductive layer for forming an interconnect. A first insulating layer overlies the first patterned conductive layer. An opening is formed through the insulating layer to the first patterned conductive layer to form the contact via. A buffer layer overlies portions of the first insulating layer and covers the opening. A second conductive layer overlies the buffer layer. A third conductive layer then overlies the integrated circuit. The buffer layer is a material, such as amorphous silicon, which functions as an anti-fuse and can be programmed by application of a relatively high programming voltage.
Inventors
- 👤 Che-Chia Wei
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-24 04:54
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/40; H10W20/49; H10W20/491
Claims Analysis
Total Claims: 7
Claim 1
Independent Claim
135 words
A method for forming an integrated circuit contact structure, comprising the steps of: forming an insulating layer over a first patterned metal interconnect layer; forming an opening through the insulating layer to expose a portion of the first patterned metal interconnect layer; forming a first conductive layer including a refractory metal material over the insulating layer and in the opening; forming a low conductivity silicon layer over the first conductive layer; forming a second conductive layer over the low conductivity silicon layer; patterning the first and second conductive layers, and the low conductivity silicon layer, to form a programmable contact within the opening, the contact having side walls; forming insulating sidewall spacers surrounding the programmable contact; and forming a second metal interconnect layer over the programmable contact and in contact with the second conductive layer.
Claim 2
Independent Claim
135 words
A method for forming an integrated circuit contact structure, comprising the steps of: forming an insulating layer over a first patterned metal interconnect layer; forming an opening through the insulating layer to expose a portion of the first patterned metal interconnect layer; forming a first conductive layer including a refractory metal material over the insulating layer and in the opening; forming a low conductivity silicon layer over the first conductive layer; forming a second conductive layer over the low conductivity silicon layer; patterning the first and second conductive layers, and the low conductivity silicon layer, to form a programmable contact within the opening, the contact having side walls; forming insulating sidewall spacers surrounding the programmable contact; and forming a second metal interconnect layer over the programmable contact and in contact with the second conductive layer.
Claim 3
Dependent Claim
16 words
The method of claim 1, wherein the first and second barrier layers comprise deposited titanium nitride.
Claim 4
Dependent Claim
14 words
The method of claim 1, wherein the low conductivity silicon layer comprises amorphous silicon.
Claim 5
Dependent Claim
46 words
The method of claim 1, wherein the step of forming insulating sidewalls comprises the steps of: depositing an oxide layer over the programmable contact and the insulating layer; and anisotropically etching back the oxide layer to leave insulating sidewalls alongside vertical portions of the programmable contact.
Claim 6
Dependent Claim
13 words
The method of claim 1, wherein the insulating layer is formed from oxide.
Claim 7
Dependent Claim
18 words
The method of claim 1, wherein the first and second patterned metal interconnect layers are formed from aluminum.
References Cited (Backward Citations)
US4203123A
Cited
US4471376A
Cited
US4651409A
Cited
US4823181A
Cited
JPH01136352A
Cited
US4872050A
Cited
JPH0235769A
Cited
EP0414631A1
Cited
JPH02288361A
Cited
EP0416903A2
Cited
US5272101A
Cited
US5095362A
Cited
US5166556A
Cited
US5100827A
Cited
WO1992016976A1
Cited
US5120679A
Cited
US5272666A
Cited
EP0558176A1
Cited
US5403778A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2003-12-12 | 2004-06-12 | 2004-12-12 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2007-12-12 | 2008-06-12 | 2008-12-12 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2011-12-12 | 2012-06-12 | 2012-12-12 | $7700.00 | Window Closed / Lapsed |